Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of Nb-doped TiO2 Transparent Conducting Oxide Film Fabricated by RF Magnetron Sputtering

RF 마그네트론 스퍼터링에 의해 합성된 Nb-doped TiO2 투명전극의 특성

  • Kim, Min-Young (Department of Electronics, Korea National University of Transportation) ;
  • Cho, Mun-Seong (Department of Electronics, Korea National University of Transportation) ;
  • Lim, Dong-Gun (Department of Electronics, Korea National University of Transportation) ;
  • Park, Jae-Hwan (Department of Electronics, Korea National University of Transportation)
  • 김민영 (한국교통대학교 전자공학과) ;
  • 조문성 (한국교통대학교 전자공학과) ;
  • 임동건 (한국교통대학교 전자공학과) ;
  • 박재환 (한국교통대학교 전자공학과)
  • Received : 2012.02.02
  • Accepted : 2012.02.23
  • Published : 2012.03.01
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Abstract

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

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References

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