• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.11
• /
• pp.902-905
• /
• 2012

This study is explore the photoelectric conversion change of dye-sensitized solar cells with surface treatment of the conductive substrate. gases of FTO surface treatment were $N_2$, and $O_2$. Treatment conditions of surface were gas flux from 25 sccm to 50 sccm and RF power were from 25 W to 50 W. Treatment time and pressure were fixed 5 min and 100 mtoor. The best sheet resistance and surface roughness were obtained by $O_2$ 50 sccm and 50 W and that result were 7.643 ${\Omega}/cm^2$ and 17.113 nm, respectively. The best efficiency result was obtained by $O_2$ 50 sccm and 50 W and that result of Voc, Jsc, FF and efficiency were 7.03 V, 14.88 $mA/cm^2$, 63.75% and 6.67%, respectively.

• Proceedings of the KWS Conference
• /
• 2009.11a
• /
• pp.73-73
• /
• 2009

In this sutdy, a new class ACA(Anisotropic Conductive Adhesive) with low-melting-point alloy(LMPA) and self-organized interconnection method were developed. This developed self-organized interconnection method are achieved by the flow, melting, coalescence and wetting characteristics of the LMPA fillers in ACA. In order to observe self-interconnection characteristic, the QFP($14{\times}14{\times}2.7mm$ size and 1mm lead pitch) was used. Thermal characteristic of the ACA and temperature-dependant viscosity characteristics of the polymer were observed by differential scanning calorimetry(DSC) and torsional parallel rheometer, respectively. A electrical and mechanical characteristics of QFP bonding were measured using multimeter and pull tester, respectively. Wetting and coalescence characteristics of LMPA filler particles and morphology of conduction path were observed by microfocus X-ray inspection systems and cross-sectional optical microscope. As a result, the developed self-organized interconnection method has a good electrical characteristic($2.41m{\Omega}$) and bonding strength(17.19N) by metallurgical interconnection of molten solder particles in ACA.

• Journal of the Korean Vacuum Society
• /
• v.21 no.6
• /
• pp.333-341
• /
• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.3
• /
• pp.99-104
• /
• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Journal of Microbiology
• /
• v.45 no.6
• /
• pp.505-509
• /
• 2007

An obligately aerobic bacterium, strain KOPRI $20902^T$, was isolated from a marine sediment in Ny-${\AA}$lesund, Spitsbergen Islands, Norway. Cells were irregular rods and motile with polar monotrichous flagellum. The optimum growth temperature was $17-22^{\circ}C$. Cells grew best in pH 7.0-10.0 and 3-4% sea salts (corresponding to 2.3-3.1% NaCl). The novel strain required $Ca^{2+}$ or $Mg^{2+}$ in addition to NaCl for growth. Sequence analysis of 16S rRNA gene revealed that the Arctic isolate is distantly related with established species (<92.4% sequence similarity) and formed a monophyletic group with Cellvibrio, which formed a distinct phylogenetic lineage in the order Pseudomonadales. Predominant cellular fatty acids [$C_{16:1}\;{\omega}7c/15:0$ iso 2OH (45.3%), $C_{16:0}$ (18.4%), ECL 11.799 (11.2%), $C_{10:0}$ 3OH (10.4%)]; DNA G+C content (37.0 mol%); nitrate reduction to nitrogen; absence of aesculin hydrolysis, N-acetyl-${\beta}$-glucosaminidase and esterase; no assimilation of arabinose, galactose, glucose, lactose, maltose, and trehalose differentiated the strain from the genus Cellvibrio. Based on the phylogenetic and phenotypic characteristics, Dasania marina gen. nov., sp. nov. is proposed in the order Pseudomonadales. Strain KOPRI $20902^T$ (=KCTC $12566^T$=JCM $13441^T$) is the type strain of Dasania marina.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.62 no.4
• /
• pp.577-583
• /
• 2013

We have analyzed influence of potential rise in negative bus, which caused by decrease of power feeding line insulation, upon protecting method of DC ground protection device which detecting potential rise between negative bus and ground in order to detect ground fault in the rubber wheel system. For this purpose, we proposed negative potential equation between negative bus and ground and calculated negative potential according to system condition changes by estimating power feeding line insulation changes in steel wheel system and rubber wheel system, and equalizing DC power feeding system when ground fault occurred. Also, in order to estimate negative potential of real system, we modeled the rubber wheel system, and simulated normal status, grounding fault occurrence and power feeding line insulation changes. In normal status, negative potential did not rise significantly regardless of vehicle operation. When ground fault occurred, negative potential rose up over 300V regardless of fault resistance. However, we also observed that negative potential rose when power feeding line insulation dropped down under $1M{\Omega}$. In conclusion, our result shows that in case of rubber wheel system unlike steel wheel system, relay will be prevented maloperation and insulation status observation can be ensured when ground over voltage relay will be set 200V ~ 300V.

• Korean Journal of Materials Research
• /
• v.22 no.4
• /
• pp.202-206
• /
• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.2
• /
• pp.179-184
• /
• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Journal of the Society of Naval Architects of Korea
• /
• v.54 no.3
• /
• pp.215-226
• /
• 2017

This paper presents numerical results of the performance of a marin propeller in cavitating and non-cavitating flow conditions. The geometry and experimental validation data of the propeller are provided in Potsdam Propeller Test Case(PPTC) in the framework of the second International Symposium on Marine Propulsors 2011(SMP'11) workshop. The PPTC includes open water tests, velocity field measurements and cavitation tests. The present numerical analysis was carried out by using the Reynolds averaged Navier-Stokes(RANS) method on a wall-resolved grid ensuring a y+=1, where the SST k-${\omega}$ model was mainly used for turbulence closure. The influence of the turbulence model was investigated in the prediction of the wake field under a non-cavitating flow condition. The propeller tip vortex flows in both cavitating and non-cavitating conditions were captured through adaptation of additional grids. For the cavitation flows at three operation points, Schnerr-Sauer's cavitation model was used with a Volume-Of Fluid(VOF) approach to capture the two-phase flows. The present numerical results for the propeller wake and cavitation predictions including the open water performance showed a qualitatively reasonable agreement with the model test results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.430.1-430.1
• /
• 2016

We present the concept of reducible fugitive material that conformally surrounds core Cu nanowire (NW) to fabricate transparent conducting electrode (TCE). Reducing atmosphere can corrodes/erodes the underlying/surrounding layers and might cause undesirable reactions such impurity doing and contamination, so that hydrogen-/forming gas based annealing is impractical to make device. In this regards, we introduce novel reducible shell conformally surrounding indivial CuNW to provide a protection against the oxidation when exposed to both air and solvent. Uniform copper lactate shell formation is readily achievable by injecting lactic acid to the CuNW dispersion as the acid reacts with the surface oxide/hydroxide or pure copper. Cu lactate shell prevents the core CuNW from the oxidation during the storage and/or film formation, so that the core-shell CuNW maintains without signficant oxidation for long time. Upon simple thermal annealing under vacuum or in nitrogen atmosphere, the Cu lactate shell is easily decomposed to pure Cu, providing an effective way to produce pure CuNW network TCE with typically sheet resistance of $19.8{\Omega}/sq$ and optical transmittance of 85.5% at 550 nm. Our reducible copper lactate core-shell Cu nanowires have the great advantage in fabrication of device such as composite transparent electrodes or solar cells.