• Structural Engineering and Mechanics
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• v.13 no.5
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• pp.465-478
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• 2002

This study lays emphasis on the development of efficient analytical models for a multistory structure with wings, including the in-plane deformation of floor slabs. For this purpose, a multistory structure with wings is regarded as the combination of multistory structures with rectangular plan and their junctions. In addition, a multistory structure with a rectangular plan is considered to be an assemblage of two-dimensional frames and floor slabs connecting two adjacent frames at each floor level. This modeling, concept can be easily applied to multistory structures with plans in the shape of L, T, Y, U, H, etc. To represent the in-plane deformation of floor slabs efficiently, a two-dimensional frame and the floor slab connecting two adjacent frames at each floor level are modeled as a stick model with two degrees of freedom per floor and a stiff beam with shear deformations, respectively. Three models are used to investigate the effect of in-plane deformation of the floor slab at the junction of wings on the seismic behavior of structures. Based on the comparison of dynamic analysis results obtained using the proposed models and three-dimensional finite element models, it could be concluded that the proposed models can be used as an efficient tool for an approximate analysis of a multistory structure with wings.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• The Journal of Korean Institute of Information Technology
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• v.16 no.11
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• pp.77-84
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• 2018

In this paper, the circular polarization microstrip patch antenna using the T-junction power divider is proposed. The operating frequency of the proposed antenna is ISM band of 2.4GHz and the circular polarization is induced by feeding a phase difference of $90^{\circ}$ in two edges. The structure of the antenna consists of a general patch and a T-junction power divider. Furthermore, to optimize the proposed antenna, it is analyzed the reflection coefficient, the axial ration and the radiation pattern. The impedance bandwidth of the antenna is observed to be 40MHz within a range of 2.39 to 2.43GHz, similarly, the axial ratio bandwidth is observed having the bandwidth of about 12MHz in 2.398 to 2.410GHz range. The radiation pattern of the antenna is seen to be right circular polarization. Furthermore, the gain of the antenna is observed to be 2.04 and 3.4dBic at XZ and YZ-plane, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.196-200
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• 2005

In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6A
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• pp.818-824
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• 2000

For the purpose of improving the stopband characteristics, the filter structure having single or double inserted metal plates in the waveguide of a reduced width have been widely stdudied so far. Usually such structures have a waveguide junction discontinuity between two waveguides of different widths. In designing such structures, we should always minimize the insertion loss due to the juction discontinuity. Besides it is difficult to fabricate the junction with desired accuracy. Here we consider new structure of tripple metal insert filter without the junction discontinuity problem, which is more suitable for mass production. An optimization procedure is taken with manufacturing error 0.1mm of inserted metal length. The theory agrees well with experimental data. so, it is show that fabrication of triple metal insert filter is more profitabel by optimization process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.38-48
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• 1993

A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.45-49
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• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.29-32
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• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.666-672
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• 1994

An H-Plane waveguide component with arbitrary shape is analyzed using finite element method(FEM) Cooperated with boundary element method(BEM). For the application of BEM in the waveguide structure, a ray representation of the waveguide Green's function is used. This technique is applied to the analysis of the waveguide inductive junction. The results are compared with the results of the mode matching technique. The comparison shows good agreement.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.162-167
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• 2013

An epitaxial layer structure for heterojunction p-InGaP/N-InAlGaP solar cell has proposed. Simulation for current density-voltage characteristics has been performed on p-InGaP/N-InAlGaP structure and the simulation results were compared with p-InGaP/p-GaAs/N-InAlGaP structure and homogeneous InGaP pn junction structure. The simulation result showed that the maximum output power and fill factor have greatly increased by replacing n-InGaP with N-InAlGaP. The thicknesses of p-InGaP and n-InAlGaP were optimized for the epitaxial layer structure of p-InGaP/N-InAlGaP.