Ultra-shallow Junction with Elevated SiCe Source/ Drain fabricated by Laser Induced Atomic Layer Doping

레이저 유도 원자층 도핑(Ll-ALD)법으로 성장시킨 SiGe 소스/드레인 얕은 접합 형성

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).