Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Measurement of 4H-SiC MESFET for High Friquency Applications

고주파용 4H-SiC MESFET 제작 및 측정

  • Kim, Jae-Kwon (Dept. of Electronics Engineering, Sogang University) ;
  • Song, Nam-Jin (Dept. of Electronics Engineering, Sogang University) ;
  • Kim, Tae-Woon (Dept. of Electronics Engineering, Sogang University) ;
  • Burm, Jin-Wook (Dept. of Electronics Engineering, Sogang University) ;
  • An, Chul (Dept. of Electronics Engineering, Sogang University)
  • 김재권 (서강대학교 전자공학과) ;
  • 송남진 (서강대학교 전자공학과) ;
  • 김태운 (서강대학교 전자공학과) ;
  • 범진욱 (서강대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2002.06.01
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Abstract

MESFET was fabricated using 4H-SiC substrates and epitaxy The DC characteristics of 0.5 urn gate length, 400 urn gate width MESFET had $I_{dss}$=200 ㎃/mm, maximum transconductance of 12 ㎳/mm at Vrs=-4 V, V, Is=27 V. Thc device had an fT of 2.5 GHz and $f_{mdx}$ of 13.3 GHz at $V_{ds}$ =27 V and $V_{g}$=-4 V. The fabrication and characterization of this device are discussed.d.d.d.

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