• Economic and Environmental Geology
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• v.41 no.1
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• pp.81-92
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• 2008

Fonualei Rift and Spreading Center(FRSC) and Mangatolu Triple function(MTJ) caldera are located in northeastern part of Lau basin which is the active back-arc basin. Deep-tow and surface-tow magnetic surveys are carried out in FRSC. In deep-tow magnetic survey, to compensate for influence of uneven distance between bathymetry and sensor height, magnetic anomaly is continued upward to a level plane by using the Guspi method. We calculate crustal magnetization using Parker and Huestis's inversion algorithm, and try to find the hydrothermal vent and understand the structure of ocean floor crust. The result of deep-tow magnetic survey at FRSC showed that Central Anomaly Magnetization High(CAMH) recorded the max value of 4.5 A/m which is associated with active ridge. The direction of SSW-NNE corresponds with the direction of the principal spreading ridge in Lau basin. The low crustal magnetizaton$(174^{\circ}35.1'W,\;16^{\circ}38.4'S)$ of -4.0 A/m is supposed to correlate with submarine hydrothermal vent. Surface-tow magnetic data were collected in MTJ caldera$(174^{\circ}00'W,\;15^{\circ}20'S)$. The prevailing SSW-NNE direction of collapsing walls and the presence of CAMH at the center of caldera strongly indicate the existence of active spreading ridge in ancient times.

• Journal of the Korean Wood Science and Technology
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• v.41 no.6
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• pp.515-527
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• 2013

Building energy simulations which are mainly used in Korea have evaluated the building energy performance with the different thermal conductivity of construction materials. In order to evaluate the energy consumption accurately, the difference in thermal conductivity of the wood used in stud for wooden structure was confirmed from the each simulation. In addition, the thermal transmission of building members and the thermal bridge at the conjunction of building members according to thermal conductivity from each simulation programs were researched. The thermal conductivity of pine that has the largest variation among the energy simulations was applied to the thermal properties of studs in wooden structure. The maximum error between the maximum and minimum thermal transmission of roof, wall, and floor slab was $0.023W/m^2{\cdot}K$. Plus, that thermal bridge at Rafter junction on the roof, roof-wall joint, and floor slab-wall joint was $0.025W/m{\cdot}K$. The heat transfer image for changes in temperature and the heat exchange were analyzed by HEAT2 program. The distorted temperature lines were found around the insufficient insulated connection parts. It was predicted that the temperature at the distorted parts in the analyzed image was lower than that of the other portion of the other structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.5
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• pp.775-782
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• 2022

In this paper, a novel small-diameter cylindrical post capacitor inserted into an evanescent-mode rectangular waveguide (EMRWG) is proposed for easier tuning. In order to feed the EMRWG, the proposed structure uses a single ridge rectangular waveguide with the same width and height as the waveguide at the input and output ends. The inserted post capacitor are made up a circular groove formed in the center of the lower part of the broad wall of the EMRWG, and a concentric cylindrical post inserted into the upper part. First, the equivalent circuit model for the proposed structure is presented. When the EMRWG and the single ridge waveguide are combined, the joint susceptance and the turns ratio of the ideal transformer are calculated by two simulations using HFSS (3d fullwave simulator, Ansoft Co.) respectively. The susceptance and resonance characteristics of the inserted post were analyzed by using the obtained parameters and the characteristics of the EMRWG. A 2-post filter with a center frequency of 4.5 GHz and a bandwidth of 170 MHz was designed using a WR-90 waveguide, and the simulation results by using the HFSS and CST, equivalent circuit model were in good agreement.

• Journal of Korean Neurosurgical Society
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• v.29 no.12
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• pp.1555-1562
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• 2000

Objects : Surgical management of the distal anterior cerebral artery(DACA) aneurysms presents several unique problems to surgeons, such as difficulty in early identification of parent arteries, high incidence of rebleeding and premature rupture, and requirement of unfamiliar approach other than conventional frontotemporal craniotomy. Therefore, preoperative anatomical knowledge of anterior interhemispheric fissure and entry point of dissection is prerequisite. Authors utilized a frontobasal approach for DACA aneurysms by using consistent external landmark for guidance to the deep structure. Materials and Methods : From Nov. 1995 to Jun. 1999, a surgical clipping of DACA aneurysms was carried out in 9 patients among a total 131 patients with intracranial aneurysms. In each case, the clinical and aneurysmal features were carefully reviewed through the angiograms, medical records, and intraoperative findings. Results : The incidence of DACA aneurysms was 6.9% from our series. All cases were arisen from juxtacallosal por-tion ; 6 cases from pericallosal-callosomarginal(PC-CM) junction and 3 from pericallosal-frontopolar(PC-FP) junction. Associated vascular anomalies were noted in 3 cases and multiple aneurysms in 3 cases, respectively. The preoperative clinical grades were generally poor. An early surgery was performed in 7 cases and frontobasal interhemispheric approaches in 7 cases. Postoperatively, two patients died of complications ; one delayed ischemic vasospasm and one aspiration pneumonia but remaining patients recovered well. Conclusion : The frontobasal interhemispheric approach was useful for DACA aneurysms in early surgery. Division of superior sagittal sinus(SSS) enabled a minimal retraction of brain on both sides, and prevention of intraoperative rupture was possible. Authors suggest the frontopolar(first frontal bridging) vein as a constant external landmark for approaching the genu of the corpus callosum and juxtacallosal DACA aneurysms.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• Journal of Periodontal and Implant Science
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• v.28 no.4
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• pp.785-797
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• 1998

This study has been done to prove that keratinized gingiva is required for the periodontal health and to analyse the adequate width that is necessary. Until now, the study on frenum has been documented on changing its location. But the location or the formation of the frenum has not been reported. This experiment has used 173 patients from the department of periodontology of Dankook University to investigate the width of keratinized gingiva, the formation of the frenum and its location for the frequency. This study also looks into the relationship between the gingival recession and the structure of the frenum, and affects they have on periodontal health. The width of the keratinized gingiva in the mandible has been found to be highest in the lateral incisor than in the central incisor. The width decreased from the canine to the first premolar until it reached the molar. The interproximal area of the mandibular frenum was 77.9%, which was greater than the frequency (22.1%) from the midline of the teeth. The highest frequency of frenum was at 30.6% in between the both central incisor then second greatest at 20.6% in between the right canine and the right first premolar. Frenum was not found in between the second premolar and the distal area. In the morphology of the frenum, it was found that 43.4% out of 551 parts were found to be a single narrow frenum, and the double or triple ligamented form of the complex frenum were found in similar frequency of 237 parts, but the broad frenum was rarely frequent. The incisal area was popular mostly with the single narrow frenum, the left premolar area frequented 57.4%, and the right premolar frequented 64.7%. Because the distance between the frenum apex and the gingival margin measured to be about 5mm or greater, the frenum apex started in the mucogingival junction and not just below the keratinized gingiva. In the 551 area investigated, 48.3% of gingiva showed recession, incisal area had recession the least at 44.9%, right buccal side at 47.4%, and right buccal side frequented the highest at 52.1%. The teeth that showed recession recessed at the average of 2.151.0.mm and the left canine showed the greatest amount of gingival recession. In the investigation to find out if the keratinized gingiva and the gingiva recession had mutually related somehow, the width of keratinized gingiva showed no affect on the probing depth, but had affected in the gingiva recession. This investigation showed that the gingival recession and the morphology of the frenum related in that, the single narrow frenum had recessed the least and the broad frenum recessed the most. With this analysis, a conclusion was drawn that the morphology of the frenum had affected in the gingical recession.

• Journal of Korean Association for Spatial Structures
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• v.2 no.1 s.3
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• pp.85-92
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• 2002

Two way grid single-layer domes are of great advantage in fabrication and construction because of the simple fact that they have only four members at each junction. But, from a point of view of mechanics, the rectangular latticed pattern gives rise to a nonuniform rigidity-distribution in the circumferential direction. If the equivalent rigidity is considered in the axial direction of members, the in-plane equivalent shearing rigidity depends only on the in-plane bending rigidity of members and its value is very small in comparison to that of the in-plane equivalent stretching rigidity. It has a tendency to decrease buckling -strength of dome considerably by external force. But it is possible to increase buckling strength by the use of roofing covering materials connected to framework. In a case like this, shearing rigidity of roofing material increases buckling strength of the overall structure and can be designed economically from the viewpoint of practice. Therefore, the purpose of this paper, in Lamella dome and rectangular latticed dome that are a set of 2-way grid dome, is to clarify the effects of roofing covering materials for increasing of buckling strength of overall dome. Analysis method is based on FEM dealing with the geometrically nonlinear deflection problems. The conclusion were given as follows: 1. In case of Lamella domes which have nearly equal rigidity in the direction of circumference, the rigidity of roofing covering materials does not have a great influence on buckling-strength, but in rectangular latticed domes that has a clear periodicity of rigidity, the value of its buckling strength has a tendency to increase considerably with increasing rigidity of roofing covering materials 2. In case of rectangular latticed domes, as rise-span-ratio increases, models which is subjected to pressure -type-uniform loading than vertical-type-uniform loading are higher in the aspects of the increasing rate of buckling- strength according to the rate of shear reinforcement rigidity, but in case of Lamella dome, the condition of loading and rise-span-ratio do not have a great influence on the increasing rate of buckling strength according to the rate of shear reinforcement rigidity.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.12
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• pp.511-517
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• 2016

Current oil-type potential transformers for trains are filled with insulating oil, which could have problems like explosions due to rising inner pressure during train operation. Therefore, mold and dry-type potential transformers are being developed to prevent explosions. One problem in manufacturing mold-type transformers is preventing void formation around the coiled core inside the mold during epoxy filling, which could cause an electrical spark. Micro voids can remain in the resin after filling, and macro voids can occur due to the structure shape. A transformer that is being developed has a cavity at the junction of the core and the coil for better performance, and when highly viscous epoxy flows inside the cavity channel, macro voids can form inside it. Therefore, in this study, the free-surface flow of the mold filling procedure was analyzed numerically by applying the VOF method. The results were used to understand the phenomena of void formation inside the cavity and to modify the process conditions to reduce voids.