• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.7
• /
• pp.721-726
• /
• 2003

This paper present a waveguide slot 16${\times}$16 assay antenna with diaphragms for 38 GHz frequency band. Diaphragms are used to control the impedance and to minimize the return loss of the structure. A 20 dB Chebyshev array of 16 waveguide slots has been designed by optimizing the positions and sizes of the diaphragms. A serial feeding system with $\pi$- and T-junction power dividers has also designed to get a 20 dB Chebyshev power distribution. A 16${\times}$16 slot array was designed for a Fixed Wireless Access System at 38 GHz frequency band, manufactured using a computer controlled milling technique, and measured for the return -19 dB and the frequency band of 740 MHz.

• International Journal of Highway Engineering
• /
• v.14 no.6
• /
• pp.85-92
• /
• 2012

PURPOSES : Since expressways in South Korea are toll roads, many trumpet type interchanges exist, resulting in the installation of loop ramps very frequently. While the travel speed of the main lane is designed to be 100-110 km/h, the structure of a loop ramp is different and is designed for a minimum speed of 40 km/h. In fact, most of the actual travel speeds measured on the ramp exceed the designated speed, which has been a major problem in traffic safety. In this research, a type of pavement marking speed-reduction treatment called the "Peripheral Transverse Line" is installed on expressway loop ramps in order to study the change of driving speeds after the installation. METHODS : To verify statistically the change, this speed-reduction treatment has been installed on the Chungju interchange and the Yeoju junction. The driving speeds before the installation were compared with driving speeds both one month and five monthsafter the installation. RESULTS : As a result, the reductions of the average driving speeds after the treatment were statistically significant. More specifically, the average driving speeds of the Chungju interchange were reduced by 7.1-7.7 % for its tangent road section, and the speeds decreased by 8.5-9.5 % for its curve section. Similarly, in the Yeoju junction, an average speed reduction of 2.9-4.8 % for its tangent section was measured, along with 3.9% long-term speed reduction for its curve section. CONCLUSIONS : Since the pavement marking speed-reduction treatment has been partially proven to be effective from this research, we expect to expand this treatment and re-confirm the effect from a long-term perspective in the future.

• Magazine of the Korean Society of Agricultural Engineers
• /
• v.39 no.3
• /
• pp.72-82
• /
• 1997

In all inelastic deformations time rate effects are always present to some degree. Whether or not their exclusion has a significant influence on the prediction of the material behaviour depends upon several factors. In the study of structural components under static loading conditions at normal temperature it is accepted that time rate effects are generally not important. However metals, especially under high temperatures, exhibit simultaneously the phenomena of creep and viscoplasticity. In this study, elastoplastic and elasto-viscoplastic models include nonlinear geometrical effects were developed and several numerical examples are also included to verify the computer programming work developed here in this work. Comparisons of the calculated results, for the elasto-viscoplastic analysis of an internally pressurised thick cylinder under plane strain condition, have shown that the model yields excellent results. The results obtained from the numerical examples for an elasto-viscoplastic analysis of the Nuclear Reinforced Concrete Containment Structure(NRCCS) subjected to an incrementally applied internal pressure were summarized as follows : 1. The steady state hoop stress distribution along the shell layer of dome and dome wall junction part of NRCCS were linearly behave and the stress in interior surfaces was larger than that in exterior. 2.However in the upper part of the wall of NRCCS the steady state hoop stress in creased linearly from its inner to outer surfaces, being the exact reverse to the previous case of dome/dome-wall junction part. 3.At the lower part of wall of NRCCS, the linear change of steady state hoop stress along its wall layer began to disturb above a certain level of load increase.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.6
• /
• pp.297-302
• /
• 2015

Nanocrystalline diamond(NCD) coated aluminium plates were prepared and applied as heat sinks for LED modules. NCD films were deposited on 1 mm thick Al plates for times of 2 - 10 h in a microwave plasma chemical vapor deposition reactor. Deposition parameters were the microwave power of 1.2 kW, the working pressure of 90 Torr, the $CH_4/Ar$ gas ratio of 2/200 sccm. In order to enhance diamond nucleation, DC bias voltage of -90 V was applied to the substrate during deposition without external heating. NCD film was identified by X-ray diffraction and Raman spectroscopy. The Al plates with about 300 nm thick NCD film were attached to LED modules and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. Thermal resistance of the module with NCD/Al plate was 3.88 K/W while that with Al plate was 5.55 K/W. The smaller the thermal resistance, the better the heat emission. From structure function analysis, the differences between junction and ambient temperatures were $12.1^{\circ}C$ for NCD/Al plate and $15.5^{\circ}C$ for Al plate. The hot spot size of infrared images was larger on NCD/Al than Al plate for a given period of LED operation. In conclusion, NCD coated Al plate exhibited better thermal spreading performance than conventional Al heat sink.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.11
• /
• pp.49-54
• /
• 1990

In this paper, a simple model is presented for the gate-voltage dependence of the parasitic resistance in MOSFETs with the lightly-doped drain (LDD) structure. At the LDD region located under the gate electrode, an accumulation layer is formed due to the gate voltage. The parasitic resistance of the source side LDD in the channel is treated as a parallel combination of the resistance of the accumulation layer and that of the bulk LDD, which is approximated as a spreading resistance from the end of the channel inversion layer to the ${n^+}$/LDD junction boundary. Also the effects of doping gradients at the junction are discussed. As result of the model, the LDD resistance decreases with increasing the gate voltage at the linear regime, and increase quasi-linearly with the gate voltage at the saturation regime, considering th velocity saturation both in the channel and in the LDD region. The results are in good agreement with experimental data reported by others.

• Journal of IKEEE
• /
• v.21 no.1
• /
• pp.24-29
• /
• 2017

In this paper, we have developed the nano carbon tile and chip which is based on a reducing process of oxidation and the viscous fluid control, after hardening to the stylene monomer and methylol acrylamide monomer using an acrylic emulsion junction material. Then we can obtain the sphere form structure of diagonal 1~3 mm, they have mixture the acrylic emulsion junction material(45%) and the coconut carbon powder(55%) of size 300~500 mesh for 25~30 min. Finally, if we have dry for the formated carbon including 30~90 minute at $90{\sim}300^{\circ}C$, then be obtained for pure carbon formation of 95%. In order to identify the safety of the friendly circumstance carbon formation, we have tested the far-infrared ratio, energy analysis, gas density and anti-disease germs experiment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.3
• /
• pp.280-288
• /
• 2009

In this paper, a high-power and low-loss stripline 10-way power divider is designed and fabricated fur the feed network of an S-band linear array antenna with Chebyshev current distribution which has a narrow beam width and low side lobe level(SLL) of 35 dB or more. The unit cell of the power divider is based on a T-junction power divider and the whole divider is comprised of the cascaded unit cells. The multi-stage impedance transformer and modified ring hybrid are used in designing the power divider for performance improvement. And the reflection loss and insertion loss are improved by modifying a connector structure for a coaxial-to-stripline transition.

• Journal of the Korean institute of surface engineering
• /
• v.49 no.2
• /
• pp.218-224
• /
• 2016

Thermal radiation pastes were prepared by dispersing carbon materials as fillers with a content of 1 weight percent in an acrylic resin. The kind of fillers was as follows; $25{\mu}m$ graphite, $45{\mu}m$ graphite, $15{\mu}m$ carbon nanotube(CNT), a 1:1 mixture of $25{\mu}m$ graphite and $15{\mu}m$ CNT, and a 1:1 mixture of $45{\mu}m$ graphite and $15{\mu}m$ CNT. Thermal emissivity was measured as 0.890 for the samples with graphite only, 0.893 for that with CNT only, and 0.892 for those containing both. After coating prepared pastes on a side of 0.4 mm thick aluminium plate and placing the plate over an opening of a box maintained at $92^{\circ}C$ with the coated side out, the temperatures on the uncoated side of the plates were measured. The samples containing graphite and CNT showed the lowest temperatures. The paste with mixed fillers was coated on the back side of the PCB of an LED module and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. The thermal resistance of the module with coated PCB was measured as 14.34 K/W whereas that with uncoated PCB was 15.02 K/W. The structure function analysis of T3ster data revealed that the difference between junction and ambient temperatures was $13.8^{\circ}C$ for the coated case and $18.0^{\circ}C$ for the uncoated. From the infrared images of heated LED modules, the hottest-spot temperature of the module with coated PCB was lower than that of the uncoated one for a given period of LED operation.

• Electronics and Telecommunications Trends
• /
• v.38 no.6
• /
• pp.41-51
• /
• 2023

Heat dissipation technology for semiconductors and electronic packaging has a substantial impact on performance and lifespan, but efficient heat dissipation is currently facing limited improvement. Owing to the high integration density in electronic packaging, heat dissipation components must become thinner and increase their performance. Therefore, heat dissipation materials are being devised considering conductive heat transfer, carbon-based directional thermal conductivity improvements, functional heat dissipation composite materials with added fillers, and liquid-metal thermal interface materials. Additionally, in heat dissipation structure design, 3D printing-based complex heat dissipation fins, packages that expand the heat dissipation area, chip embedded structures that minimize contact thermal resistance, differential scanning calorimetry structures, and through-silicon-via technologies and their replacement technologies are being actively developed. Regarding dry cooling using single-phase and phase-change heat transfer, technologies for improving the vapor chamber performance and structural diversification are being investigated along with the miniaturization of heat pipes and high-performance capillary wicks. Meanwhile, in wet cooling with high heat flux, technologies for designing and manufacturing miniaturized flow paths, heat dissipating materials within flow paths, increasing heat dissipation area, and reducing pressure drops are being developed. We also analyze the development of direct cooling and immersion cooling technologies, which are gradually expanding to achieve near-junction cooling.

• Journal of Magnetics
• /
• v.19 no.1
• /
• pp.10-14
• /
• 2014

In this study, we fabricate an integrated microfluidic chip with a planar Hall effect (PHE) sensor for single magnetic bead detection. The PHE sensor was constructed with a junction size of $10{\mu}m{\times}10{\mu}m$ using a trilayer structure of Ta(3 nm)/NiFe(10 nm)/Cu(1.2 nm)/IrMn(10 nm)/Ta(3 nm). The sensitivity of the PHE sensor was 19.86 ${\mu}V/Oe$. A diameter of 8.18 ${\mu}m$ magnetic beads was used, of which the saturation magnetization was ~2.1 emu/g. The magnetic susceptibility ${\chi}$ of these magnetic beads was calculated to be ~0.14. The diluted magnetic beads solution was introduced to the microfluidic channel attributing a single bead flow and simultaneously the PHE sensor voltage was measured to be 0.35 ${\mu}V$. The integrated microchip was able to detect a magnetic moment of $1.98{\times}10^{-10}$ emu.