• Korean Journal of Materials Research
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• v.27 no.12
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• pp.658-663
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• 2017

Urchin-structured zinc oxide(ZnO) nanorod(NR) gas sensors were successfully demonstrated on a polyimide(PI) substrate, using single wall carbon nanotubes(SWCNTs) as the electrode. The ZnO NRs were grown with ZnO shells arranged at regular intervals to form a network structure with maximized surface area. The high surface area and numerous junctions of the NR network structure was the key to excellent gas sensing performance. Moreover, the SWCNTs formed a junction barrier with the ZnO which further improved sensor characteristics. The fabricated urchin-structured ZnO NR gas sensors exhibited superior performance upon $NO_2$ exposure with a stable response of 110, fast rise and decay times of 38 and 24 sec, respectively. Comparative analyses revealed that the high performance of the sensors was due to a combination of high surface area, numerous active junction points, and the use of the SWCNTs electrode. Furthermore, the urchin-structured ZnO NR gas sensors showed sustainable mechanical stability. Although degradation of the devices progressed during repeated flexibility tests, the sensors were still operational even after 10000 cycles of a bending test with a radius of curvature of 5 mm.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.2
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• pp.35-42
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• 2022

In this paper, a method to increase the combining efficiency and isolation of the combiner, the core module of SSPA (solid state amplifier), was studied. Specifically, the isolation was secured by matching the common port and the isolation port in the waveguide combiner. The matching structure for matching is in the form of a circular disk and is engraved inside the waveguide combiner. The structure is very simple, so it is possible to secure stable performance. And this structure showed more than 60 times higher critical power performance compared to previous studies, confirming that it is suitable for high output. And by combining 1-stage T-junction and 2, 3 stage MagicT combiner, miniaturization was achieved and the combining efficiency was optimized by reducing the insertion loss. The fabricated waveguide coupler obtained an isolation of 16dB or more and a coupling efficiency of 86.2%.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.214-221
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• 2023

As a filler metal for lowering the melting point of Ag, many alloy metal candidates have emerged, such as cadmium, with zinc, manganese, nickel, and titanium as active metals. However, since cadmium is known to be harmful to the human body, Cd-free filler metals are now mainly used. Still, no study has been conducted comparing the characteristics of joints prepared with and without cadmium. In addition, studies have yet to be conducted comparing the typical characteristics of brazing filler metals with special structures, and the joint characteristics of brazing filler metals with available frames. In this study, the characteristics of junctions of silver-based intercalation metals were compared based on the type of filler metal additives, using a special structure, a filler metal sandwich structure, to protect the internal base metal. The general filler metal was compared using the structure, and the thickness of the filler metal according to the thickness was reached. A comparison of the characteristics of the junction was conducted to identify the characteristics of an intersection of silver-based brazing filler metal and the effect on joint strength. Each filler metal's collective tensile strength was measured, and the relationship between joint characteristics and tensile joint strength was explored. The junction was estimated through micro strength measurement, contact angle measurement with the base metal when the filler metal was melted, XRD image observation, composition analysis for each phase through SEM-EDS, and microstructure phase acquisition.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.338.2-338.2
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• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1258-1261
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• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.128.2-128.2
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• 2007

• Journal of the Korean Mathematical Society
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• v.42 no.6
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• pp.1311-1322
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• 2005

We consider the several plane sector domains which are bonded together along common edges with vertex at the origin. Such domains appear in electric conducting problem with multi-layered heterogeneous media. Our aim is to give a structure theorem of the singularities of the electric field at the corner. Also, we provide a regularity theorem for the electric field.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.365-368
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• 2002

WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NMI ion implantation and deposition & etch nitride layer New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip.