Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Development of Hot Carrier Immunity Device in NMOSFET's

NMOSFET에서 핫-캐리어 내성의 소자 개발

  • 김현호 (도립충북과학대학 전자정보과) ;
  • 김현기 (극동정보대학 전자통신과) ;
  • 우경환 (우송공업대학 무역사무과) ;
  • 하기종 (영동대학 전자통신과) ;
  • ;
  • 이천희 (청주대학교 전자공학과)
  • Published : 2002.06.01
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Abstract

WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NMI ion implantation and deposition & etch nitride layer New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip.

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