• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• Anatomy and Cell Biology
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• v.56 no.1
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• pp.61-68
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• 2023

Anatomical knowledge of the occipital condyle (OC) and its relationships to surrounding structures is important for avoiding injury during craniovertebral junction (CVJ) surgeries. This study was conducted to evaluate the morphology and morphometry of OC and its relationship to foramen magnum, jugular foramen (JF), and hypoglossal canal (HC). Morphometric parameters including length, width, height, and distances from the OC to surrounding structures were measured. The oval-like condyle was the most common OC shape, representing for 33.0% of all samples. The mean length, width and height of OC were 21.3±2.4, 10.5±1.4, and 7.4±1.1 mm, respectively. Moreover, OC was classified into three types based on its length. The most common OC length in both sexes was moderate length or type II (62.5%). The mean distance between anterior tips and posterior tips of OC to basion, and opisthion were 11.5±1.4, 39.1±3.3, 25.2±2.2, and 27.4±2.7 mm, respectively. The location of intracranial orifice of HC was commonly found related to middle 1/3 of OC in 45.0%. JF was related to the anterior 2/3 of OC in 81.0%, the anterior 1/3 of OC in 12.5%, and the entire OC length in 6.5%. These morphological analysis and morphometric data should be taken into consideration before performing surgical operation to avoid CVJ instability and neurovascular structure injury.

• The Korean Journal of Physiology and Pharmacology
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• v.20 no.2
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• pp.147-152
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• 2016

Present study aimed to investigate the effect of curcumin-pretreatment on intestinal I/R injury and on intestinal mucosa barrier. Thirty Wistar rats were randomly divided into: sham, I/R, and curcumin groups (n=10). Animals in curcumin group were pretreated with curcumin by gastric gavage (200 mg/kg) for 2 days before I/R. Small intestine tissues were prepared for Haematoxylin & Eosin (H&E) staining. Serum diamine oxidase (DAO) and tumor necrosis factor (TNF)-${\alpha}$ levels were measured. Expression of intestinal TNF-${\alpha}$ and tight junction protein (ZO-1) proteins was detected by Western blot and/or immunohistochemistry. Serum DAO level and serum and intestinal TNF-${\alpha}$ leves were significantly increased after I/R, and the values were markedly reduced by curcumin pretreatment although still higher than that of sham group (p<0.05 or p<0.001). H&E staining showed the significant injury to intestinal mucosa following I/R, and curcumin pretreatment significantly improved the histological structure of intestinal mucosa. I/R insult also induced significantly down-regulated expression of ZO-1, and the effect was dramatically attenuated by curcumin-pretreatment. Curcumin may protect the intestine from I/R injury through restoration of the epithelial structure, promotion of the recovery of intestinal permeability, as well as enhancement of ZO-1 protein expression, and this effect may be partly attributed to the TNF-${\alpha}$ related pathway.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.94-94
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• 2008

We have performed simulation for Junction Field Effect Transistor(JFET) using Silvco to improve its electrical properties. The device structure and process conditions of Si-control JFET(Si-JFET) were determined to set its cut off voltage and drain current(at Vg=0V) to -0.5V and $300{\mu}A$, respectively. From electrical property obtained at various implantation energy, dose, and drive-in conditions of p-gate doping, we found that the drive in time of p-type gate was the most determinant factor due to severe diffusion. Therefore we newly designed SiGe-JFET, in which SiGe layer is to epitaxial layers placed above and underneath of the Si-channel. The presence of SiGe layer lessen the p-type dopants (Boron) into the n-type Si channel the phenomenon would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer will be discussed in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.1-8
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• 2002

In this paper, a thermopile which is applied to wide uses of temperature measuring was fabricated and its characteristic was improved by appling SOI structure to the fabrication. We improved characteristic of the thermopile by using single crystal silicon strips that has high seebeck coefficient and dielectric isolating the silicon strips from substrate with silicon dioxide film which dramatically decrease thermal conductivity between hot and cold junction compared to a silicon strip which was fabricated by ion implantation. The thermopile consists of 17 p-type single crystal silicon strips and 17 n-types by serial connection. The result of electromotive force measuring showed very good characteristic as 130mV/K when temperature difference between the two ends of the thermopile occurs by applying light on the thermopile fabricated with silicon strips of $1600{\mu}m$ length, $40{\mu}m$ width, $1{\mu}m$ thickness.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.39 no.1
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• pp.39-46
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• 2013

Bicationic minerals such as calcium and magnesium are known to protect the skin barrier. The principal objective of this study was to evaluate the skin barrier protective effects of mineral water, which is composed of calcium, magnesium, manganese, and fluorine. UVB irradiation induces a destruction of tight junction (TJ) components. The TJ permeability barrier was also disrupted by UVB irradiation. We employed a skin equivalent model to assess the efficacy of mineral water in this regard. Mineral water maintained the structure of the skin equivalents following UVB irradiation. The results of the TJ permeability assay showed that mineral water helped to maintain the TJ permeability barrier after UVB irradiation in skin equivalent model. Mineral water supported the structure of TJ components and restored the occludin protein level in differentiated normal human keratinocytes after UVB irradiation. In conclusion, we found out the protective effect of mineral water against UVB irradiation.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1956-1958
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• 1999

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.22-23
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Journal of Ocean Engineering and Technology
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• v.33 no.5
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• pp.411-420
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• 2019

It is essential to design crashworthy marine structures for operations in Arctic regions, especially ice-covered waters, where the structures must have sufficient capacity to resist iceberg impact. In this study, a numerical analysis of a colliding accident between an iceberg and stiffened plates was carried out employing the commercial finite element code ABAQUS/Explicit. The ice material model developed by Liu et al. (2011) was implemented in the simulations, and its availability was verified by performing some numerical simulations. The influence of the ambient temperature on the structural resistance was evaluated while the local stress, plastic strain, and strain energy density in the structure members were addressed. The present study revealed the risk of fracture in terms of steel embrittlement induced by ambient temperature. As a result, the need to consider the possibility of brittle failure in a plate-stiffener junction during operations in Arctic regions is acknowledged. Further experimental work to understand the structural behavior in a plate-stiffener junction and HAZ is required.