• 천문학회지
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• 제27권2호
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• pp.133-146
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• 1994

We have detected a SiO maser line (v=1, J=2- 1) for 15 stars out of about 80 long period variables in the wide range of period. No new sources are detected; all detected sources are variables with period longer than 300 days; no evidence is found that the dust grains in the outer envelope have influenced on this line. The time variation of this maser line for 7 stars, T Cep, ${\mu} Cep$, U Her, R Leo, R Lmi, U Ori, and R Ser is observed and compared with optical light curve at the same epoch of maser observation. No universial relation between the time variation and the optical light curve is found. It implies that the radiation from a central star does not much play an important role for the direct pumping of the SiO maser line.

• 천문학회지
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• 제39권3호
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• pp.73-80
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• 2006

We analyze the extinction law towards several B1V stars-members of our Galaxy, searching for possible discrepancies from the galactic average extinction curve. Our photometric data allow to build extinction curves in a very broad range: from extreme UV till infrared. Two-colour diagrams, based on the collected photometric data from the ANS UV satellite, published UBV measurements and on the infrared 2MASS data of the selected stars, are constructed. Slopes of the fitted straight lines are used to build the average extinction curve and to search for discrepant objects. The selected stars have also been observed spectroscopically from the Terskol and ESO Observatories; these spectra allow to check their Sp/L's. The spectra of only about 30% of the initially selected objects resemble closely that of HD144470, considered as the standard of B1 V type. Other spectra either show some emission features or belong clearly to another spectral types. They are not used to build the extinction curve. Two-colour diagrams, constructed for the selected B1 V stars, showing no emission stellar features, prove that the interstellar extinction law is homogeneous in the Galaxy. Both the shape of the curve and the total-to-selective extinction ratio do not differ from the galactic average and the canonical value(3.1) respectively. The circumstellar emissions usually cause some discrepancies from the average interstellar extinction law; the discrepancies observed in the extraterrestrial ultraviolet, usually follow some misclassifications.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.68-72
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• 2000

We have deposited Mn on Pd(oon) at RT up to 30 ML. LEED pattern changed from p($1{\times}1$) to c($2{\times}2$) order below 0.5 ML Mn deposition. During Mn deposition, we have not found any changes in the peak position and the intensity of LEED I/V curve. Using LEED I/V curve analysis for each coverage, we found atomic structure and surface composition of c($2{\times}2$) ordered Mn alloy on Pd(001) surface. Above 1 Ml Mn, in the first layer the Mn subplane lies above the Pd subplane by 0.32 ${\AA}$. This result is very different from the earlier result of Jona et al., who contended that after annealing at 200 for 2 min, a buckled first layer with the Mn subplane lower than the Pd subplane by 0.2 ${\AA}$.

• 한국초전도ㆍ저온공학회논문지
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• 제15권3호
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• pp.9-12
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• 2013

Current-voltage characteristic models of superconducting material are suggested by many researchers. These current-voltage characteristic models are important because they can be used for design or simulation of superconductor devices. But widely used current-voltage models of superconductor wire still have some limitations. For example, a standard E-J power model has no parameters related with stabilizer's resistance in superconductor wire. In this paper, a current-voltage characteristic modeling method for high temperature superconductor (HTS) tape with considering the effect of stabilizer is introduced. And a current-voltage characteristic of a HTS tape is measured under different stabilizer conditions. Those measured current-voltage characteristics of the HTS tape modeled with proposed modeling method and the modeling results are compared.

• 한국진공학회지
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• 제16권1호
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• pp.1-6
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• 2007

우리는 O/Fe(100)의 원자적 구조와 MgO/Fe(100) 표면의 계면의 구조를 LEED I/V curve를 이용하여 분석하였다. 산소를 Fe(100) 표면에 흡착시켰을 때 Fe 표면의 첫 번째 층간 간격은 약 16 % 정도 팽창하는 것을 확인하였다. 1ML MgO를 Fe(100) 표면에 성장하였을 때, MgO의 O가 Fe의 on-top 위치에 자라나는 것을 확인하였고, MgO/Fe 계면의 층간 간격이 확장되는 것을 확인하였다. AIA(average intensity mixing approximation) 계산을 사용하여 단층 MgO 성장한 Fe(100) 계의 계면구조는 MgO/FeO/Fe(100)와 MgO/Fe(100)의 계면구조를 갖는 것을 확인하였다. 이것은 확장된 FeO 층의 존재를 보이고 MgO/FeO/Fe(100)와 MgO/Fe(100) 두가지 계면 구조의 공존을 보인 EELS 실험 결과를 뒷받침 한다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 춘계학술발표회 초록집
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• Nuclear Engineering and Technology
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• 제53권7호
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• pp.2323-2333
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• 2021

The paper proposes a technique for reconstructing the true hardening curve of isotropic materials from ring tensile tests. Neutron irradiated 42XNM alloy tensile properties were investigated. The calculation of the true hardening curve for tensile and compression tests of standard cylindrical samples was performed at the first step. After that, the FEM-model was developed and validated using the ring tension and compression tests (with the hardening curve defined in step 1). Finally, the true hardening curve was calculated by selecting the FEM-model parameters and its validation by ring sample tests in different states using an iterative method. For these samples, experimental and calculated gauge length values were obtained, and the corresponding material's constants were estimated.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.1225-1226
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• 2012

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1561-1562
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• 2013