• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of Applied Biological Chemistry
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• 제43권1호
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• pp.18-24
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• 2000

A one-dimensional transport of displacing monovalent ion, $A^+$, and a trivalent ion being displaced, $B^{3+}^ in a porous exchange system such as soil was approximated using the Crank-Nicolson implicit finite difference technique and the Thomas algorithm in tandem. The variations in the concentration profile were investigated by varying the ion-exchange equilibrium constant (k) of ion-exchange reactions, the influent concentrations, and the cation exchange capacity (CEC) of the exchanger, under constant flux condition of pore water and dispersion coefficient. A higher value of k resulted in a greater removal of the native ion, behind the sharper advancing front of displacing ion, while the magnitude of the penetration distance of $A^+$ was not great. As the CEC increased, the equivalent fraction of $B^{3+}^ initially in the soil was greater, thus indicating that a higher CEC adsorbed trivalent cations preferentially over monovalent ions. Mass balance error from simulation results was less than 1%, indicating this model accounted for instantaneous charge balance fairly well.

• 환경위생공학
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• 제8권1호
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• pp.67-80
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• 1993

This survey was carried out to take the status of seawater intrusion into groundwater wells located in the eastern area of Chejudo, to get the elementary data which may evaluate the level of would-be groundwater contamination, and to perform effective the effort that will supply the clear water for the residents. The sampling sites were northeastern districts of Haengwon, Handong, and Sangdo, southeastern districts of Susan, Nansan, and Samdal, and northwestern districts, as reference, of Aewol, Keumnung, Panpo, Kosan, Shindo, and Bosung. We collected the samples from the public tap water by month, and analysed electrical conductivity, sodium(Na), potassium(K), magnesium(Mg), calcium(Ca), bicarbonate($HC0_{3^-}$), and items of the criteria as drinking water. In the northeastern districts we also added the sampling sites to survey the fluctuations of dissolved solids according to distance from seashore, including two private boreholes and one public tap water of Dukchun. The result is as follows 1) In the northeastern district, the concentration of chloride ion showed large fluctations from 40mg/l to 100mg/l, but suitable for the criteria of drinking water. It was thought that the drought influenced. 2) In the Sangdo of the northeastern districts, similar tendancy to Hangwon and Handong was showed only in the concentration of chloride ion, but different tendancy was showed in chloride-bicarbonate ratio, calcium-magnesium ratio, and sodium adsorption ratio(SAR). Considering these facts, it was not thought that seawater intruded. 3) The components of Na and Cl showed rapid slope in the northeastern districts above 3km from seashore. 4) In the northwestern districts as reference, the concentration of chloride ion fluctuated slightly according to the sampling sites and dates, and the concentration of nitrate-nitrogen in some sites exceeded the criteria of drinking water. These were thought that the surface contaminants rather than the intrusion of seawater influenced mainly the groundwater, considering the correlation(r=0.732) of chloride ion and nitrate-nitrogen. 5) Then we must consider the regional characteristies of soil profile in order to prevent the contamination of groundwater, and moniter also the movement of main components within the sol1 profile, not only the research of the intrusion of seawater.

• 산업기술연구
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• 제40권1호
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• pp.7-12
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• 2020

Lithium-ion cells have become the go-to energy source across all applications; however, dendritic growth remains an issue to tackle. While there have been various research conducted and possible solutions offered, there is yet to be one that efficiently rules out the problem without, however, introducing another. This paper seeks to present a fast charging method and system to which lithium-ion batteries are charged while maintaining their lifetime. In the proposed method, various lithium cells are charged under multiple profiles. The parameters of charge profiles that inflict damage to the cell's electrodes are obtained and used as thresholds. Thus, during charging, voltage, current, and temperature are actively controlled under these thresholds. In this way, dendrite formation suppressed charging is achieved, and battery life is maintained. The fast-charging system designed, comprises of a 1.5kW charger, an inbuilt 600W battery pack, and an intelligent BMS with cell balancing technology. The system was also designed to respond to the aging of the battery to provide adequate threshold values. Among other tests conducted by KCTL, the cycle test result showed a capacity drop of only 0.68% after 500 cycles, thereby proving the life maintaining capability of the proposed method and system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.212-212
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• 2010

최근 차세대 반도체 메모리 소자로 대두된 magnetic random access memory(MRAM)에 대한 연구가 활발히 진행되고 있다. 특히 MRAM의 magnetic tunnel junction(MTJ) stack을 구성하는 자성 재료의 건식 식각에 대한 연구에서는 좋은 profile을 얻고, 재층착의 문제를 해결하기 위한 노력이 계속해서 진행되고 있다. 본 연구에서는 photoresist(PR)과 Ti 하드 마스크로 패턴 된 배리어(barrier) 층인 MgO 박막의 식각 특성을 유도결합 플라즈마를 이용한 고밀도 반응성 이온 식각(inductively coupled plasma reactive ion etching-ICPRIE)을 통해서 연구하였다. PR 및 Ti 마스크를 이용한 자성 박막들은 HBr/Ar, HBr/$O_2$/Ar 식각 가스의 농도를 변화시키면서 식각되었다. HBr/Ar 가스를 이용 식각함에 있어서 좋은 식각 조건을 얻기 위한 parameter로서 pressure, bias voltage, rf power를 변화시켰다. 각 조건에서 Ti 하드마스크에 대한 터널 배리어층인 MgO 박막에 selectivity를 조사하였고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.237-241
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• 1990

A detailed theoretical and experimental study of k-na exchange in soda lime silicate glasses by RTP is presented. Concentration profiles i.e. index profiles are given by complementary error function added Gaussian function. The estimated diffusion coefficient is 1.54${\mu}{\textrm}{m}$2/min.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.74-74
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• 2004

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.97-100
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• 2002

NaEr(WO$_4$)$_2$ is a new laser material. The planar optical waveguide was formed in NaEr(WO$_4$)$_2$ crystal by 2.6 MeV He$^{+}$ ion implantation at doses of 1.0-1.5 $\times$ 10$^{16}$ ions/cm$^2$ at room temperature. The effective refractive indices of the dark modes were measured using the prism coupling method. foul n modes and five TM modes were observed in the waveguide. The refractive index profiles were analyzed using the reflectivity calculation method (RCM). The influence of heat treatment at moderate temperature on the refractive index profiles of the waveguide was also investigated. We used the TRIM'98 (Transport of ton in Matter) code to simulate the damage profile in the NaEr(WO$_4$) crystal by 2.6 MeV He$^{+}$ion implantation which is helpful for a better understanding of the waveguide formation.ion.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.796-803
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• 1998

Intrinsic and proximity gettering are popular processes to get higher cumulative production yield and usually adopt multi-step annealing and high energy ion implantation, respectively. In order to test the combined processed of these, high energy \ulcornerAs\ulcorner ion implantation and 2-step annealing process were adopted. After the ion implantation followed by 2-step annealing, the wafers were cleaved and etched with Wright etchant. The morphology of cross section on samples was inspected by FESEM. The concentration profile of As was measured by SRP. The location and type of secondary defects inspected by HRTEM were dependent on the 1st annealing temperatures. That is, a line of dislocation located at $1.5mutextrm{m}$ apart from the surface at $600^{\circ}C$ lst annealing was changed to some dislocation lines or loops nearby the surface at 100$0^{\circ}C$. The density of dislocation line was reduced but the size of the defects was enlarged as the temperature increased.