• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.504-509
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• 2011

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV~6 kV to measure the conduction current for the analysis of ion current.

• Analytical Science and Technology
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• v.14 no.6
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• pp.486-493
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• 2001

The effect of SIMS analysis conditions such as mesh grid, offset voltage and ion species on the in-depth profile for bismuth titanate thin film was examined in terms of charging effect and detection limit. The results shows that the use of offset voltage -40 V reduces the charging effect and the detection limit. The employment of mesh grid in sample preparation leads to the reduction of the charging effect in small amount, but deteriorate the detection limit. Utilization of primary $O^-$ ion for SIMS analysis of bismuth titanate thin film showed almost the same effect as using offset voltage -40 V. However, it takes approximately triple acquisition time than using $O_2{^+}$ ion due to the poor beam current of the source in the experiment.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.929-935
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• 1986

In this paper, we describe the physical modelling and numerical aspects of a program called PRECISE(Program for Efficient Calculation of Impurity Profile in Semiconductor by Elimination) which calcualtes a two-dimensional impurity profile in silicon due to diffusion and ion implantation steps. The PRECISE enables rapid prediction of the two-dimensional impurity profile near the mask edge-or the bird's beak during the local oxidation process. This has been developed by modifying the existing one-dimentional simulator, DIFSIM(DIFfusion SIMulator to include models for arsenic diffusion and emitter dip effect which were found out to agree fairly well with the xperimental data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1986.04a
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• pp.206-210
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• 1986

Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.

• Proceedings of the Korean Society for Bioinformatics Conference
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• 2005.09a
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• pp.134-138
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• 2005

The design of ion channel targeted library is a valuable methodology that can aid in the selection and prioritization of potential ion channel-likeness for ion-channel-targeted bio-screening from large commercial available chemical pool. The differences of property profiling between the 93 ion-channel active compounds from MDDR and CMC database and the ACDSC compounds were classified by suitable descriptors calculated with preADME software. Through the PCA, clustering, and similarity analysis, the compounds capable of ion channel activity were defined in ACDSC compounds pool. The designed library showed a tendency to follow the property profile of ion-channel active compounds and can be implemented with great time and economical efficiencies of ligand-based drug design or virtual high throughput screening from an enormous small molecule space.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.107.1-107.1
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• 2014

We have developed and commercialize a time-of-flight - medium energy ion scattering spectrometry (TOF-MEIS) system (model MEIS-K120). MEIS-K120 adapted a large solid acceptance angle detector that results in high collection efficiency, minimized ion beam damage while maintaining a similar energy resolution. In addition, TOF analyzer regards neutrals same to ions which removes the ion neutralization problems in absolute quantitative analysis. A TOF-MEIS system achieves $7{\times}10^{-3}$ energy resolution by utilizing a pulsed ion beam with a pulse width 350 ps and a TOF delay-line-detector with a time resolution of about 85 ps. TOF-MEIS spectra were obtained using 100 keV $He^+$ ions with an ion beam diameter of $10{\mu}m$ with ion dose $1{\times}10^{16}$ in ordinary experimental condition. Among TOF-MEIS applications, we report the quantitative compositional profiling of 3~5 nm CdSe/ZnS QDs, As depth profile and substitutional As ratio of As implanted/annealed Si, Ionic Critical Dimension (CD) for FinFET, Direct Recoil (DR) analysis of hydrogen in diamond like carbon (DLC) and InxGayZnzOn on glass substrate.

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.567-572
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• 2009

In this study, the effects of counter ion valency of the electrolyte on the colloidal repulsion between two parallel cylindrical particles were investigated. Electrostatic interactions of the cylindrical particles were calculated with the variation of counter ion valency. To calculate the electrical repulsive energy working between these two cylindrical particles, Derjaguin approximation was applied. The electrostatic potential profiles were obtained numerically by solving nonlinear Poission-Boltzmann (P-B) equation and calculating middle point potential and repulsive energy working between interacting surfaces. The electrical potential and repulsive energy were influenced by counter ion valency, Debye length, and surface potential. The potential profile and middle point potential decayed with the counter ion valency due to the promoted shielding of electrical charge. On the while, the repulsive energy increased with the counter ion valency at a short separation distance. These behaviors of electrostatic interaction agreed with previous results on planar or spherical surfaces.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2253-2255
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• 1999

Plasma source ion implantation (PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. Properties such as hardness, corrosion resistance, wear resistance and friction can be improved without affecting the bulk properties of the material. Type 304 austenitic stainless steel was treated by nitrogen plasma ion implantation at a target bias of -50kV. Surface properties, including microhardness and ion depth profile, were studied.

• International Journal of Railway
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• v.4 no.4
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• pp.86-92
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• 2011

Chloride ion diffusion at the corner of rectangular-shaped concrete structures is presented. At the corner of rectangular-shaped concrete, chloride ion diffusion is in two-dimensional process. Chloride ions accumulate from two orthogonal directions, so that corrosion-free life of concrete structures is significantly reduced. A numerical procedure based on finite element method is used to solve the two-dimensional diffusion process. Orthotropic property of diffusion coefficient of concrete is considered and chloride ion profile obtained from numerical analysis is used to produce transformed diffusion coefficient. Comparisons of experimental data are also carried out to show the reliability of proposed numerical analysis. As a result of two-dimensional chloride diffusion, corrosion-free life of concrete structure for railway is estimated using probability of corrosion initiation. In addition, monographs that produces transformed diffusion coefficient and corrosion-free life of concrete structure are made for maintenance purpose.