Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characterization of Two-Dimensional Impurity Profile in Silicon

실리콘에서의 2차원적 불순물 분포의 산출

  • Yang, Yeong Yil (Dept. of Elec. Eng., KAIST) ;
  • Kyung, Chong Min (Dept. of Elec. Eng., KAIST)
  • 양영일 (한국과학기술원 전기 및 전자공학과) ;
  • 경종민 (한국과학기술원 전기 및 전자공학과)
  • Published : 1986.06.01
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Abstract

In this paper, we describe the physical modelling and numerical aspects of a program called PRECISE(Program for Efficient Calculation of Impurity Profile in Semiconductor by Elimination) which calcualtes a two-dimensional impurity profile in silicon due to diffusion and ion implantation steps. The PRECISE enables rapid prediction of the two-dimensional impurity profile near the mask edge-or the bird's beak during the local oxidation process. This has been developed by modifying the existing one-dimentional simulator, DIFSIM(DIFfusion SIMulator to include models for arsenic diffusion and emitter dip effect which were found out to agree fairly well with the xperimental data.

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