• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.92-97
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• 2016

Surface erosion using focused ion beam irradiation is the most promising technology for the realization of micro/nanofabrication. However, accurate fabrication of predefined structures is still challenging. This article introduces a single step surface driving method to fabricated predefined curved structures. The previously reported multi step surface driving method (MSDM) has been modified so that a single ion dose profile can be used instead of multiple ion dose profiles. Experimental realization of the method is presented with the fabrication of predefined curved surfaces as well as reference to surface propagation theory. For the purpose of verification, simulations are performed on the basis of a sound mathematical model.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.526-526
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• 2012

DC magnetron discharges were studied using three-dimensional self-consistent particle-in-cell and Monte Carlo collisional (PIC-MCC) simulation codes. Two rectangular sputter sources (120 mm * 250 mm and 380 mm * 200 mm target sizes) were used in the simulation modeling. The number of incident ions to the Cu target as a function of position and simulation time was obtained. The target erosion profile was calculated by using the incident ions and the sputtering yields of the Cu target calculated with SRIM codes. The maximum ion density of the ion density distribution in the discharge was about $10^{10}cm^{-3}$ due to the calculation speed limit. The result may be less than one or two order of magnitude smaller than the real maximum ion density. However, the target erosion profiles of the two sputter sources were in good agreement with the measured target erosion profiles except for the erosion profile near the target surface, in which which the measured erosion width was broader than the simulation erosion width.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.183-187
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• 2000

In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.2
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• pp.126-133
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• 2017

The conventional battery charger requires two separate voltage and current compensators to achieve constant current and constant-current-charging profile. This compensator configuration leads to an inevitable transient response during the mode change between the constant current and the constant voltage operation. Futhermore, a tedious and complicated design process is required to consider a widely changing battery voltage and the nonlinear electrical properties of Li-ion battery. This study proposes a single integrated voltage-current compensator of the LLC resonant converter for Li-ion battery charger applications to overcome the aforementioned drawbacks. The proposed compensator is designed to provide a smooth and reliable performance during the entire charging process while providing the reduced design efforts and seamless mode transient response. Several experimental results based on a 300 W prototype converter and its theoretical analysis are provided to verify the effectiveness of the proposed compensator.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.365-366
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.312-312
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• 2008

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.63-70
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• 1989

The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300$^{circ}C$ annealing. The Au and Ge depth profiles measured by AES agreed with the results of Monte Carlo simulation based on the two-body collision.

• Nuclear Engineering and Technology
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• v.54 no.7
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• pp.2586-2591
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• 2022

In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

• Journal of Environmental Science International
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• v.16 no.8
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• pp.907-912
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• 2007

Ion exchange resin was used to remove silica ion at ultralow concentration. The effects of temperature, type of ion exchange resin and single/mixed-resin systems on removal efficiency were estimated. As temperature increased, the slope of concentration profile became stiff, and the equilibrium concentration was higher. In the single resin system, the removal of silica was continued up to 400 min, but the silica concentration was recovered to initial concentration after 400 min due to the effect of dissolved $CO_2$. In the mixed-resin system it took about 600 min to reach equilibrium. Because of faster cation exchange reaction than anion exchange reaction, the effect of $CO_2$ could be removed. Based on the experimental results carried out in the mixed-resin system, the selectivity coefficients of silica ion for each ion exchange resin were calculated at some specific temperatures. The temperature dependency of the selectivity coefficient was expressed by the equation of Kraus-Raridon type.