• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.58-64
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• 1984

A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.225-233
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• 2001

Distortion of Secondary Ion Mass Spectrometry(SIMS) depth profile, which is usually observed when the analysis is made using oxygen flooding on the surface of Si with oxide on it, has been corrected. The origin of distortion has been attributed to depth calibration error due to sputter rate difference and concentration calibration error due to relative sensitivity factor(RSF) difference between $SiO_2$ and Si layers, In order to correct depth calibration error, artifact in analysis of sodium ion on oxide was used to define the interface in SIMS depth profile and oxide thickness was measured with SEM and XPS. The differences of sputter rate and RSF between two layers have been attributed to volume swelling of Si substrate occurred by oxygen flooding induced oxidation. The corrected SIMS depth profiles showed almost the same results with those obtained without oxygen flooding.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.61-64
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• 2003

The fractography was used to observe the stress profile on a single ion-exchanged glass. In the processing, the temperature was varied during the ion exchange, and then the stress profile on the single ion-exchanged glass was shifted from glass surface to slightly below the glass surface. The hackle mark and mirror surface were varied according to process conditions, and the glass strength was increased with increasing the number of hackle markers. In case of breaking the stress profile by using indenter, the breaking property was similar to the annealed glass.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.51-58
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• 1985

A simple model for the impurity profile in an ion-implanted channel layer of an enhance-ment type IGFET is assumed and a simple expression for the threshold voltage is derived by the assumed impurity profile. In application, the concept of correction factor K is used and the value of threshold voltage is well agreed with experimental value. Also, 1-V character-istics curve is well agreed with experimental value. In addition, this program is packaged and is utilized.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.129-133
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• 2007

Focused Ion Beam(FIB) systems is a useful tool for the fabrication of micro-nano scale structures. In this study, the effects of FIB etching on the Au microstructure are systematically investigated. As the fabrication parameters, ion dose, dwell time and beam overlap ratio are studied. First, the increases of Ga ion dose makes the milling yield higher and the sidewall of milling profile steeper. Dwell time is found to have little effects on the milling profile due to the relatively large milling area of $1\times1{\mu}m^2$ used in this study. However, beam overlap significantly affects not only milling rate but also milling profile. As the beam overlap ratio changes from positive to negative, the development of regular cross-stripe patterns at the bottom with low milling rate is observed.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.8
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• pp.84-90
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• 2010

In focused ion beam (FIB) fabrication processes the ion beam intensity with Gaussian profile has a drawback for high resolution machining. In this paper, the fabrication method to modify the beam profile at substrate using silt mask is proposed to increase the machining resolution at high current. Slit mask is utilized to block the part of beam and transmit only high intensity portion. A nano manipulator is utilized to handle the silt mask. Geometrical analysis on fabricated profile through silt mask was conducted. By utilizing proposed method, improvement of machining resolution was achieved.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.179-184
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• 2015

Quadrupole Mass Spectrometers (QMS) is a very useful tool in vacuum process diagnosis. Tungsten filament based ion sources are vulnerable to contamination from process gas monitoring. Common symptoms of quadrupole mass spectrometer malfunction is appearance of unwanted contaminant mass peaks or no detection of any ion peaks. We disassembled used quadrupole mass spectrometer and found out black insulating deposits on inside of ion source parts. Five steps of cleaning procedure were applied and almost full restoration of functions were confirmed in two types of closed ion source quadrupole mass spectrometer. By using a numerical modeling (CFD-ACE+) technique, the electric potential profile of ion source with/without insulating deposit was calculated and showed the possibility of quadrupole mass spectrometer malfunction by the deterioration of designed potential profile inside the ion source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.73-76
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• 1995

In this study, the slab waveguide was fabricated using potassium-nitride(KNO$_3$) or silver-nitride (AgNO$_3$) molten sources by ion-exchange process. The effective refractive indices of waveguide were measured by Prism-Coupling method. and The characteristics of waveguide(mode dispersion, effective diffusion depth. surface refractive index, diffusion coefficient, and refractive index profile etc,) were investigated by WKB method, In the case of potassium ion-exchange, the computer calculation showed that the refractive index profile of waveguide followed Gaussian function, the surface refractive index increased with ion-exchange time and the effective diffusion depth increased a little as ion-exchange time increased, while the surface refractive index of silver ion-exchanged waveguide decreased with ion-exchange time because of the ion depletion on the surface of waveguide, and the effective diffusion depth seriously with ion-exchange tim. Double ion-exchanged waveguide was fabricated by performing silver ion-exchange after potassium ion-exchange. Double ion-exchanged waveguide had a tight mode binding force since the surface refractive index was larger than single step ion-exchanged waveguide.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.967-972
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• 2003

The inner-diameter 5 cm cold hollow cathode ion source was designed for the high current density and the homogeneous beam profile of ion beam. The ion source consisted of a cylindrical cathode, a generation part of magnetic field, a plasma chamber, convex type ion optic system with two grid electrode, and DC power supply system. The cold hollow cathode ion sources were classified into standard type (I), electron output electrode modified type (II). The operation of the ion source was done with discharge current, ion beam potential and argon gas flow rate. The modification of electron output electrode resulted in uniform plasma generation and uniform area of ion beam was extended from 5 cm to 20 cm. Improved ion source was evaluated with beam uniformity, ion current, team extraction efficiency, and ionization efficiency.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.23 no.1
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• pp.11-17
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• 2011

A major source of durability problems in concrete structures is the corrosion of steel by the damage of passivity layer around steel bars. As chloride ion penetration is major cause of the destruction of passivity layer, evaluation of depth and concentration profile of chloride ion is the essential factor for the service-life estimation of concrete structure. To estimate chloride ion penetration characteristics, this paper on the basis of in-situ experimental data investigated the depth and concentration profile of chloride ion penetration. The core specimens are obtained at air-zone, splash zone, and tidal zone in Wando, Masan, Incheon, Gwangyang, and donghae harbors. Colorimentric method measured the chloride ion penetration depth and ASTM C 114 evaluated the concentration profile of chloride ion. Based on experimental data, the influence of harbor location and exposure condition on chloride ion penetration is evaluated.