• Title/Summary/Keyword: interlayer bonding

Search Result 94, Processing Time 0.029 seconds

Characteristics of Liquid Phase Diffusion Bonded Joints Using Newly Developed Ni-3Cr-4Si-3B Insert Metal of Heat Resistant Alloy (신개발 Ni-3Cr-4Si-3B 삽입금속으로 액상확산접합한 내열주강 접합부의 특성)

    • Journal of Welding and Joining
    • /
    • v.18 no.6
    • /
    • pp.62-67
    • /
    • 2000
  • Metallurgical characteristics of bonded region and high temperature mechanical properties of heat resistant alloy, Fe-35Ni-26Cr during liquid phase diffusion bonding were investigated employing AM17 insert metal. The insert metal for bonding, AM17 was newly developed Ni-base metal using interpolation method. Bonding of specimens were carried out at 1,403~1,463K for 600s in vacuum. The microconstituents in the bonded interlayer disappeared in the bonding temperature over 1,423K. The microstructures, alloying elements and hardness distribution in the base metal. The tensile strength and elongation of the joints at elevated temperatures were the same level as one of the base metal in the bonding temperature over 1,423K. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

  • PDF

Effect of Bonding Temperature and Heating Rate on Transient Liquid Phase Diffusion Bonding of Ni-Base Superalloy (니켈기 초내열 합금의 천이액상확산접합 특성에 미치는 접합 온도 및 가열 속도의 영향)

  • Choi Woo-Hyuk;Kim Sung-Wook;Kim Jong-Hyun;Kim Gil-Young;Lee Chang-Hee
    • Journal of Welding and Joining
    • /
    • v.23 no.2
    • /
    • pp.52-58
    • /
    • 2005
  • This study was carried out to investigate the effect of bonding temperature and heating rate on transient liquid phase diffusion bonding of Ni-base superalloy. The heating rate was varied by $0.1^{\circ}C$/sec, $1^{\circ}C$/sec, $10^{\circ}C$/sec to the bonding temperatures $1100^{\circ}C,\;1150^{\circ}C,\;1200^{\circ}C$ under vacuum. As bonding temperature increased, maximum dissolution width of base metal increased, but a dissolution finishing time decreased. The eutectic width of insert metal in the bonded interlayer decreased linearly in proportion to the square root of holding time during isothermal solidification stage. The bonding temperature was raised, isothermal solidification rate slightly increased. As the heating rate decreased and the bonding temperature increased, the completion time of dissolution after reaching bonding temperature decreased. When the heating rate was very slow, the solidification proceeded before reaching bonding temperature and the time required for the completion of isothermal solidification became reduced.

Direct Bonding Characteristics of 2 inch 3C-SiC Wafers for MEMS in Hash Environments (극한환경 MEMS용 2 inch 3C-SiC 기판의 직접접합 특성)

  • Chung, Yun-Sik;Ryu, Ji-Goo;Kim, Kyu-Hyun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.11a
    • /
    • pp.387-390
    • /
    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

  • PDF

A Study on Pre-bonding of 3C-SiC Wafers using CVD Oxide (CVD 절연막을 이용한 3C-SiC 기판의 초기직접접합에 관한 연구)

  • ;;Shigehiro Nishino
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.10
    • /
    • pp.883-888
    • /
    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

A Study on the Polymerization of $\varepsilon$-Caprolactame in [RCOOH]-Montmorillonite Intercalations-Complex ([RCOOH]-Montmorillonite 층간화합물내에서의 $\varepsilon$-Caprolactame의 고분자화반응에 관한 연구)

  • 조성준
    • Journal of the Korean Ceramic Society
    • /
    • v.36 no.2
    • /
    • pp.151-158
    • /
    • 1999
  • $\varepsilon$-Caprolactame as organic monomer was intercalated in the interlayer space of montmorillonite and polymerized by polymerization reaction so that the inorganic polymer and organic polymer could be combined each other by chemical bonding. The results of X-ray and IR analysis showed that the polymerization reaction of $\varepsilon$-caprolactame between the interlayer spaces has been performed sucessfully. In order to study polymeric reaction product in detail we have isolated the polymerized material from the interlayer space and analyzed it by X-ray diffractometer and IR-Spectrocopy. The comparison of these results with them of the analyses for thee pure polymer which has been synthesized by polymeric reaction of $\varepsilon$-carolactame without montmorillonite showed that the obtained both polymeric materials are the same compounds.

  • PDF

A Strong Dependence of the P-P Bond Length on the Transition Metal Component in ThCr2Si2-Type Phosphides CaM2P2 (M = Fe, Ni): The Influence of d Band Position and σp* Mixing

  • Kang, Dae-Bok
    • Bulletin of the Korean Chemical Society
    • /
    • v.24 no.8
    • /
    • pp.1215-1218
    • /
    • 2003
  • An analysis of the bonding situation in CaM₂P₂ (M=Fe, Ni) with ThCr₂Si₂ structure is made in terms of DOS and COOP plots. The main contributions to covalent bonding are due to M-P and P-P interactions in both compounds. Particularly, the interlayer P-P bonding by variation in the transition metal is examined in more detail. It turns out that the shorter P-P bonds in CaNi₂P₂ form as a result of the decreasing electron delocalization into ${{\sigma}_p}^*$ of P₂ due to the weaker bonding interaction between the metal d and ${{\sigma}_p}^*$ as the metal d band is falling from Fe to Ni.

Development of High Aspect Ratio Spacer Process using Anodic Bonding for FED (정전접합을 이용한 고종횡비의 FED용 스페이서 공정 개발)

  • Kim, Min-Su;Kim, Gwan-Su;Mun, Gwon-Jin;U, Gwang-Je;Lee, Nam-Yang;Park, Se-Gwang
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.49 no.1
    • /
    • pp.70-72
    • /
    • 2000
  • In this paper, a spacer process for FED(Field Emission Display) was developed with the glass to glass anodic bonding technology using Al film as an interlayer and a 3.5 inch monochromatic type FED was fabricated. Holder to dislocate spacers vertically was designed with (110) Si wafer by bulk etching. Spacers, $100\mum\; width\; and\; 1000\mum$ height, were formed on anode panel by spacer to glass anodic bonding and the fabricated FED was operated for emission at 1㎸ anode voltage.

  • PDF

Metallurgical Study of Microconstituents in Transient Liquid Phase Bended Joints of Ni Base Superalloy (Ni기 초내열합금의 액상확산접합부 생성상의 금속조직학적 검토)

  • 김대업
    • Journal of Welding and Joining
    • /
    • v.19 no.1
    • /
    • pp.75-81
    • /
    • 2001
  • The metallurgical study of microconstituents in transient liquid phase bonded joints of Ni-base single crystal superalloys, CMSX-2 and CMSX-4 was investigated employing MBF-80 insert metal. TLP bonding of specimens was carried out at 1,373~1,523K for 0~19.6ks in vacuum. Three types of microconstituents ; needle-like constituent, dot-like constituent and abnormal shape constituent were formed in the bonded interlayer during TLP bonding operation. All these microconstituents were identified as boride. Microconstituents contain a large percentage of Cr in the early stage of bonding. As increasing the holding time, the amount of Cr was decreased and the amount of W, Co and Re were increased. From the analysis results of electron diffraction pattern by TEM, composition of elements in microconstituents were into MBlongrightarrowM$_{5}$B$_3$longrightarrowM$_2$B type with the increased in holding time. It can be explained by the fact that the relative amount of boron in microconstituents was decreased when the holding time was increased.d.

  • PDF

Microstructure and Bonding Strength of Tungsten Coating Deposited on Copper by Plasma Spraying

  • Song, Shu-Xiang;Zhou, Zhang-Jian;Du, Juan;Zhong, Zhi-Hong;Ge, Chang-Chun
    • Proceedings of the Korean Powder Metallurgy Institute Conference
    • /
    • 2006.09a
    • /
    • pp.511-512
    • /
    • 2006
  • Tungsten coatings with different interlayers onto the oxygen-free copper substrates were fabricated by atmosphere plasma spraying. The effects of different interlayers of NiCrAl, NiAl and W/Cu on bonding strength were studied. SEM, EDS and XRD were used to investigate the photographs and compositions of these coatings. The tungsten coatings with different initial particle sizes resulted in different microstructures. Oxidation was not detected in the tungsten coating, but in the interlayer, it was found by both XRD and EDS. The tungsten coating deposited directly onto the copper substrate presented higher bonding strength than those with different interlayers.

  • PDF