• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.75-78
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• 1995

Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of $3pA/\mu \textrm{cm}^2$ at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.47-50
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• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.12
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• pp.1667-1672
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• 2003

In contrast to the high demand for MEMS devices, microflow analysis is not feasible even for single-phase flow with conventional Navier-Stokes equation because of non-continuum effect when characteristic dimension is comparable with local mean free path. DSMC is one of particle based DNS(Direct Numerical Simulation) methods that uses no continuum assumption. In this paper, gas flow in microchannel is studied using DSMC. Interfacial shear and flow characteristics are observed and compared with the results of gas flow that is in contact with liquid case and solid wall case. The simulation is limited to the case of equilibrium steady state and evaporation/condensation coefficient is assumed to be the same and unity. System temperature remains constant and the interfacial shear appears to be small compared to the result with solid wall. This is because particles evaporated and reflected from the liquid surface form high density layer near the interface with liquid flow.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Journal of Electrochemical Science and Technology
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• v.13 no.2
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• pp.199-207
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• 2022

Lithium-sulfur batteries (LSBs) have emerged as a promising alternative to lithium-ion batteries (LIBs) owing to their high energy density and economic viability. In addition, all-solid-state LSBs, which use solid-state electrolytes, have been proposed to overcome the polysulfide shuttle effect while improving safety. However, the high interfacial resistance and poor ionic conductivity exhibited by the electrode and solid-state electrolytes, respectively, are significant challenges in the development of these LSBs. Herein, we apply a poly (ethylene oxide) (PEO)-based composite solid-state electrolyte with oxide Li₇La₃Zr₂O₁₂ (LLZO) solid-state electrolyte in an all-solid-state LSB to overcome these challenges. We use an electrochemical method to evaluate the degradation of the all-solid-state LSB in accordance with the carbon content and loading weight within the cathode. The all-solid-state LSB, with sulfur-carbon content in a ratio of 3:3, exhibited a high initial discharge capacity (1386 mAh g^-1), poor C-rate performance, and capacity retention of less than 50%. The all-solid-state LSB with a high loading weight exhibited a poor overall electrochemical performance. The factors influencing the electrochemical performance degradation were revealed through systematic analysis.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05b
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• pp.241-246
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• 1996

An analytical model to calculate rate of vapor generation due to heterogeneous wall nucleation in flashing flow is developed. In the present model, an important parameter of the vapor generation term, i.e. nucleation site density is calculated by integrating its probability distribution function with respect to active cavity radius. The limits of integration are minimum and maximum active cavity radii, and these are formulated using an active cavity model for nucleate boiling. This formulation, therefore. can statistically account for the effect of surface specific thermo-physical and geometric conditions on the vapor generation rate and flashing inception. For verifying the adequacy of the present model, steady state two-fluid and the bubble transport equations are solved with applicable constitutive equations. The applicable region of the bubble transport equation is also extended to churn-turbulent flow regime to predict interfacial area concentration at high void fraction. Predicted results in terms of axial pressure and void fraction profiles along the channels are compared with experimental data of Super Moby Dick and BNL Reasonable agreements have been achieved and this shows the applicability of the present model to flashing flow analysis.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.4
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• pp.157-163
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• 1984

The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.7
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• pp.623-629
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• 2004

Rapid development of electronic technology requires small size, high density packaging and high power of electronic devices, which result in more heat generation by the electronic system. Present cooling technology may not be adequate for the thermal management in the current state-of-the-art electronic equipment. Forced convective heat transfer in a channel filled with pin-fin array is studied experimentally in this paper as an alternative cool-ing scheme for a high heat-dissipating equipment. Various configurations of the pin-fin array are selected in order to find out the effect of spacing and diameter of the pin-fin on the heat transfer and pressure drop characteristics. In the low porosity region, interfacial heat transfer and pressure drop seem to show different trend compared to the conventional heat transfer process.