• Journal of Surface Science and Engineering
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• v.39 no.4
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• pp.190-197
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• 2006

The effects of blasting and acidic treatment on the corrosion characteristics of dental implant fabricated with Cp-Ti and Ti-6Al-4V alloy have been researched by using electrochemical methods. The fabricated implants were cleaned and sandblasted by $Al_2O_3$ powder and then acidic treatment was carried out in nitric acid solution. The surface morphology were observed using scanning electron microscope. The corrosion behaviors were investigated using potentiosat and EIS in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The potentio-dynamic test in 0.9% NaCl indicated that the corrosion potential of blasting and acidic treated implant was lower than that of non treated implant, but current density was higher than that of non treated implant. From the cyclic potentiodynamic test results of Ti implant, the passivation current density of blasting and acidic treated implant slightly higher than that of non treated implant. From A.C. impedance test results in 0.9% NaCl solution, polarization resistance($R_p$) value of blasting and acidic treated implant was lower than that of non treated implant. In case of blasting and acidic treated implant surface, the pits were observed in valley and crest of implant surface.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.21-29
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• 2003

Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.225-228
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• 1997

The main fault in this interface is that power cable insulating materials are mainly composed of a double layered structure, XLPE/FPDM laminates in cable joint. In this parer, we instituted the interface of XLPE/EPDM laminates and then investigated the breakdown and conduction characteristics as a function of heat treatment time. The results showed that conduction current was influenced by volatile crosslinking by-products which remained inside the insulating material during the production of XLPE and EPDM, especially during heat treatment process. And conduction current of XLPE/Oil 12500cSt/EPDM was more stable than XLPE/Grease/EPDM from the long heat treatment time. AC breakdown strength of silicone oil itself from the heat treatment was changed during the 4∼12 hour heat treatment time.

• Journal of Korean Society of Environmental Engineers
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• v.36 no.8
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• pp.549-553
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• 2014

Variation of sewage sludge interface height and flow rate by rainfall were applied to the actual public sewage treatment plant, and the efficiency of sewage treatment was evaluated by measuring $BOD_5$, $COD_{Mn}$, SS, T-N, and T-P. When both flow and interfacial height are increased, the treatment efficiencies in terms of the five water pollutants are decreased. Among them SS is the most critical pollutant in rainfall. When 0.5 Q inflow was applied, the efficiencies were 74.2% at the sludge interface height of 0.5 m, 76.4% at 1.0 m, 70.2% at 1.5 m, and 60.7% at 2.0 m. When 1.0 Q inflow was applied, the efficiencies were 71.7% at the sludge interface height of 0.5 m, 71.9% at 1.0 m, 46.4% at 1.5 m, and -38.0% at 2.0 m. Operation at 2.0 Q~2.0 m and 3.0 Q~1.0 m above the sludge rising phenomenon occurred causing adverse effects on the public bodies. If the flow rate increases, the processing efficiency is reduced from 74.2% to 17.3%, even though the sludge interface height was maintained at 0.5 m, so that the inflow adjustment was most important during rainfall, and the interface height of 1.0 m should be maintained to minimize the adverse effect on public water system.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.118-123
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• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.232-233
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• 2005

The Surface of semi-conductive silicone rubber was treated by oxygen plasma to improve adhesion and electric performance in joints between insulating and semi-conductive silicone materials. Surface characterizations were assessed using contact angle measurement and Fourier transform infrared spectroscope (FTIR). Adhesion level was understood from T-peel tests between plasma treated semi-conductive and insulating material. Electrical breakdown strength was measured to understand the charge of electrical performance. From the results, the oxygen plasma treatment produces a significant increase in function group of containing oxygen which can be mainly ascribed to the creation of carbonyl groups on the silicone surface from the strength were improved. Therefore it is concluded then plasma treatment leads to decrease voids originating form poor adhesive, and the improve the adhesion in silicone interface. So we could obtain higher electrical design level of silicone material used for electrical apparatus using oxygen plasma treatment.

• Advances in concrete construction
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• v.7 no.3
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• pp.191-201
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• 2019

Bamboo concrete bond behaviour is investigated through pullout test in this work. The bamboo strip to be used as reinforcement inside concrete is first treated with chemical adhesive to make the bamboo surface impermeable. Various surface coatings are explored to understand their water repellant properties. The chemical action at the bamboo concrete interface is studied through different chemical coatings, sand blasting, and steel wire wrapping treatment. Whereas mechanical action at the bamboo concrete interface is studied by developing mechanical interlock. The result of pullout tests revealed a unique combination of surface treatment and grooved bamboo profile. This combination of surface treatment and a grooved bamboo profile together enhances the strength of bond. Performance of a newly developed grooved bamboo strip is verified against equivalent plain rectangular bamboo strip. The test results show that the proposed grooved bamboo reinforcement, when treated, shows highest bond strength compared to treated plain, untreated plain and untreated grooved bamboo reinforcement. Also, it is observed that bond strength is majorly influenced by the type of surface treatment, size and spacing of groove. The changes in bamboo-concrete bond behavior are observed during the experimentation.

• Journal of Welding and Joining
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• v.20 no.5
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• pp.93-98
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• 2002

The effect of bonding misfit on single crystallization of transient liquid phase (TLP) bonded joints of single crystal superalloy CMSX-2 was investigated using MBF-80 insert metal. The bonding misfit was defined by (100) twist angle (rotating angle) at bonded interface. TLP bonding of specimens was carried out at 1523K for 1.8ks in vacuum. The post-bond heat treatment consisted of the solution and sequential two step aging treatment was conducted in the Ar atmosphere. The crystallographic orientation analysis across the TLP bonded joints was conducted three dimensionally using the electron back scattering pattern (EBSP) method. EBSP analyses f3r the bonded and post bonded heat treated specimens were conducted. All bonded joints had misorientation centering around the bonded interface for as-bonded and post-bond heat treated specimens with rotating angle. The average misorientation angle between both solid phases in bonded interlayer was almost identical to the rotating angle at bonded interface. HRTEM observation revealed that the atom arrangement of both solid phases in bonded interlayer was quite different across the bonded interface. It followed that grain boundary was formed in bonded interface. It was confirmed that epitaxial growth of the solid phase occurred from the base metal substrates during TLP bonding and single crystallization could not be achieved in joints with rotating angle.

• Journal of Magnetics
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• v.10 no.4
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• pp.137-141
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• 2005

We confirmed that the improvement in properties of magnetic tunnel junctions prepared by radical oxidation after thermal treatment was mostly resulted from the redistribution of oxygen at the $AIOx/Co_{90}Fe_{10}$ interface. The as-deposited Al oxide barrier was oxygen-deficient but most of it re-oxidized into $Al_2O_3$, the thermodynamically stable stoichiometric phase, through thermal treatment. As a result, the effective barrier height was increased from 1.52 eV to 2.27 eV. On the other hand, the effective barrier width was decreased from 8.2 ${\AA}$ to 7.5 ${\AA}$. X-ray absorption spectra of Fe and Co clearly showed that the oxygen in the CoFe layer diffused back into the Al barrier and thereby enriched the barrier to close to a stoichiometirc $Al_2O_3$ phase. The oxygen bonded with Co and Fe diffused back by 6.8 ${\AA}$ and 4.5 ${\AA}$ after thermal treatment, respectively. Our results confirm that controlling the chemical structures of the interface is important to improve the properties of magnetic tunnel junctions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.11-14
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and AFM. Adhesion was obtained from T-peel tests of semiconductive layer having different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the the creation of O-H and C=O. It is observed that adhesion performance was determined by not surface energy but roughness level of silicone surface. It is found that ac dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.