• Journal of KIISE:Software and Applications
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• v.33 no.9
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• pp.751-775
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• 2006

In this paper, we suggested an avatar control technique using the high-level behavior. We separated behaviors into three levels according to level of abstraction and defined layered scripts. Layered scripts provide the user with the control over the avatar behaviors at the abstract level and the reusability of scripts. As the 3D environment gets complicated, the number of required avatar behaviors increases accordingly and thus controlling the avatar-object behaviors gets even more challenging. To solve this problem, we embed avatar behaviors into each environment object, which informs how the avatar can interact with the object. Even with a large number of environment objects, our system can manage avatar-object interactions in an object-oriented manner Finally, we suggest an easy-to-use user interface technique that allows the user to control avatars based on context menus. Using the avatar behavior information that is embedded into the object, the system can analyze the object state and filter the behaviors. As a result, context menu shows the behaviors that the avatar can do. In this paper, we made the virtual presentation environment and applied our model to the system. In this paper, we suggested the technique that we controling an the avatar control technique using the high-level behavior. We separated behaviors into three levels byaccording to level of abstract levelion and defined multi-levellayered script. Multi-leveILayered script offers that the user can control avatar behavior at the abstract level and reuses script easily. We suggested object models for avatar-object interaction. Because, TtThe 3D environment is getting more complicated very quickly, so that the numberss of avatar behaviors are getting more variableincreased. Therefore, controlling avatar-object behavior is getting complex and difficultWe need tough processing for handling avatar-object interaction. To solve this problem, we suggested object models that embedded avatar behaviors into object for avatar-object interaction. insert embedded ail avatar behaviors into object. Even though the numbers of objects areis large bigger, it can manage avatar-object interactions by very efficientlyobject-oriented manner. Finally Wewe suggested context menu for ease ordering. User can control avatar throughusing not avatar but the object-oriented interfaces. To do this, Oobject model is suggested by analyzeing object state and filtering the behavior, behavior and context menu shows the behaviors that avatar can do. The user doesn't care about the object or avatar state through the related object.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Science of Emotion and Sensibility
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• v.13 no.3
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• pp.429-440
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• 2010

It is known that as many as 1 in 91 children are diagnosed with an autistic spectrum disorder, and the incidence rate of the autistic spectrum disorder is much higher than that of cancer in Korea. It is necessary to develop a novel technology to sense their emotional status and give proper psychological diagnosis and therapy, since the children with autistic spectrum disorder usually do not express their own emotional status. This article presents the state-of-the-arts on the affective computing technologies that include recognition of emotional status through bio-sensing and virtual affective agent modeling, and then proposes a novel system architecture for diagnosis and therapy of autistic spectrum disorder. The diagnosis and therapy system of autistic spectrum disorder is composed of bio-sensing module, virtual environment module with affective agents, and haptic interface module. The architecture proposed in this paper will enhance the objectivity to diagnose autism spectrum disorders, and enable continuous treatment in daily life.

• 한국HCI학회:학술대회논문집
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• 2009.02a
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• pp.961-970
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• 2009

Over the last decade, interactive devices such as mobile phones have become complicated drastically mainly because of feature creep, the tendency for the number of features in a product to rise with each release of the product. One of the ways to reduce the complexity of a multi-functional device is to design it consistently. Although the definition of consistency is elusive and it is sometimes beneficial to be inconsistent, in general, consistently designed systems are easier to learn, easier to remember, and causing less errors. In practice, however, it is often not easy to design the user interaction or interface of a multi-functional device consistently. Since the interaction design of a multi-functional device should deal with a large number of design variables and relations among them, solving this problem might be very time-consuming and error-prone. Therefore, there is a strong need for a well-developed methodology that supports the complex design process. This study has developed an effective and efficient methodology, called CUID (Consistent Design of User Interaction), which focuses on logical consistency rather than physical or visual consistency. CUID deals with three main problems in interaction design: procedure design for each task, decisions of available operations(or functions) for each system state, and the mapping of available operations(functions) and interface controls. It includes a process for interaction design and a software tool for supporting the process. This paper also demonstrates how CUID supports the consistent design of user interaction by presenting a case study. It shows that the logical inconsistencies of a multi-functional device can be resolved by using the CUID methodology.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3626-3631
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• 2009

This study has provided some of the first experimental results of NMOSFET hot-carrier degradation for the analog circuit application. After hot-carrier stress under the whole range of gate voltage, the degradation of NMOSFET characteristics is measured in saturation region. In addition to interface states, the evidences of hole and electron traps are found near drain depending on the biased gate voltage, which is believed to the cause for the variation of the transconductance($g_m$) and the output conductance($g_{ds}$). And it is found that hole trap is a dominant mechanism of device degradation in a low-gate voltage saturation region, The parameter degradation is sensitive to the channel length of devices. As the channel length is shortened, the influence of hole trap on the channel conductance is increased. Because the magnitude of $g_m$ and $g_{ds}$ are increased or decreased depending on analog operation conditions and analog device structures, careful transistor design including the level of the biased gate voltage and the channel length is therefore required for optimal voltage gain ($A_V=g_m/g_{ds}$) in analog circuit.

• Elastomers and Composites
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• v.49 no.1
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• pp.43-52
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• 2014

The effect of nanoclay (Cloisite 20A) on the self-adhesion behavior of uncured brominated-isobutylene-isoprene rubber (BIIR) has been studied. The dispersion state of nanoclay into the rubber matrix was examined by SEM, TEM and XRD analysis. The thermal degradation behavior of the filled and unfilled samples was examined by TGA and improvement in the thermal stability of the nanocomposites occurred based on the weight loss (%) measurements. Also, addition of nanoclay enhanced the cohesive strength of the material by reinforcement action thereby reducing the degree of molecular diffusion across the interface of butyl rubber. However, the average depth of penetration of the inter-diffused chains was still adequate to form entanglement on either side of the interface, and thus offered greater resistance to peeling, resulting in high tack strength measurements. The improvement in tack strength was only achieved at critical nanoclay loading above 8 phr. Contact angle measurement was also made to examine the surface characteristics. There was no significant interfacial property change by employing the nanoclay.

• Composites Research
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• v.27 no.6
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• pp.219-224
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• 2014

Nancomposites manufacture has been developed rapidly, because of reinforcing effects of CNT in terms of mechanical, electrical and thermal properties. In this study, 10 wt% CNT paste was fabricated with good dispersion state and easy processability. Damage sensing and reinforcing effect of CNT paste were investigated in nanocomposites. 10 wt% CNT paste exhibited better tensile and flexural properties than those of general 1 wt% CNT nanocomposites. To observe the healing effect of CNT paste, a crack was made artificially with 30wt% CF30wt%/PP composites, and the CNT paste was filled inside the crack. The damage sensing of CNT paste in CF30wt%/PP composites was investigated by electrical resistance measurement and mechanical tests. CNT paste exhibited good reinforcing effect in mechanical properties of CF30wt%/PP composites, and this reinforcing effect was getting better with larger cracks. The reason was because CNT paste had good interfacial adhesion with CF30wt%/PP composites to resist crack propagation. In electrical resistance measurement, there was a jump in electrical resistance signal at the adhesion interface. The jumping signal could be used to predict fracture of CF/PP composites. CNT nanocomposites for damage sensing had crack reducing effect and damage detection using electrical resistance method.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.15-19
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• 2012

Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

• Journal of the Korea Society of Computer and Information
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• v.18 no.3
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• pp.107-118
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• 2013

In this paper, we developed the semiconductor monitoring system for the etching process. Around the world, expert companies are competing fiercely since the semiconductor industry is a leading value-added industry that produces the essential components of electronic products. As a result, many researches have been conducted in order to improve the quality, productivity, and characteristics of semiconductor products. Process monitoring techniques has an important role to give an equivalent quality and productivity to produce semiconductor. In fact, since the etching process to form a semiconductor circuit causes great damage to the semiconductors, it is very necessary to develop a system for monitoring the process. The proposed monitoring system is mainly focused on the dry etching process using plasma and it provides the detailed observation, analysis and feedback to managers. It has the functionality of setting scenarios to match the process control automatically. In addition, it maximizes the efficiency of process automation. The result can be immediately reflected to the system since it performs real-time monitoring. UI (User Interface) provides managers with diagnosis of the current state in the process. The monitoring system has diverse functionalities to control the process according to the scenario written in advance, to stop the process efficiently and finally to increase production efficiency.