• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.57-58
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• 1992

The NH$_3$oxidation, which forms thermal oxide layer on silicon substrate with pure $O_2$gas added with small amounts of NH$_3$gas, has good interface sates due to activated gettering effect during oxidation. The superiority of interfae state in NH$_3$ oxidation method is not affected by preprocess but by gettering during oxidation. The dramatec reduction fo interface state is conformed with observing OSF when NH$_3$ oxide is annealed in NH$_3$ atmosphere.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.515-518
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• 2002

In this paper, we demonstrate the impact of oxide interface-state on low temperature poly-Si TFTs. The TFTs with interface-state exhibit poor performance and serious degradation under hot carrier and gate bias stress. Our results indicate that the worse oxide integrity cause initial characteristic shift and device instability.

• Nuclear Engineering and Technology
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• 제53권3호
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• pp.842-850
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• 2021

Real Time Simulation (RTS) has long been used in the nuclear power industry for operator training and engineering purposes. And, Online Simulation (OLS) is based on RTS and with connection to the plant information system to acquire the measurement data in real time for calibrating the simulation models and following plant operation, for the purposes of analyzing plant events and providing indicative signs of malfunctioning. An OLS system has been developed to support PWR operations for CPR1000 plants. The OLS system provides graphical user interface (GUI) for operators to monitor critical plant operations for preventing faulty operation or analyzing plant events. Functionalities of the OLS system are depicted through the maneuvering of the GUI for various OLS functional modules in the system.

• 센서학회지
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• 제31권4호
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• 전자공학회논문지A
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• 제29A권4호
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• pp.83-90
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• 1992

The state machine synthesizer is widely used to FSM synthesis. In this paper, we developed the state machine description language "state CHDL" such as IF, THEN, ELSE, SWITCH, CASE statements. Also, an algorithm for efficient state minimization and two level minimizer of FSM and graphical user interface-pin map window, supporting the designer with input-ouput effency, are presented.

• 중소기업융합학회논문지
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• 제2권1호
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• pp.19-24
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• 2012

본 논문에서는 네트워크 상황 정보를 이용한 다중 인터페이스 단말의 배터리 수명 연장 방법을 제안한다. 단말은 현재 접속 네트워크에 병목현상이 발생하는 경우, 다중 인터페이스를 이용하여 다중 경로로 데이터를 수신한다. 하지만 다중 인터페이스를 이용하는 경우 단말의 배터리 소모가 많아 단말의 배터리 수명이 짧아진다. 이러한 배터리 소모를 줄이기 위해 OLT를 통해 네트워크의 병목현상 유무를 판단하고 단말에게 네트워크 상황 정보를 전송한다. 단말은 네트워크 상황 정보를 통해 하나의 인터페이스를 비활성화 시켜 에너지 소비를 절감시킨다. 단일 인터페이스와 다중 인터페이스를 사용함에 따른 배터리 소비량을 계산하여 제안 방안의 효과를 확인하였다.

• 한국표면공학회지
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• 제51권4호
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• pp.243-248
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• 2018

All solid state thin film batteries with two types of cell structure, Pt / $LiCoO_2$ / LiPON / Cu and Pt / $LiCoO_2$ / LiPON / $LiCoO_2$ / Cu, are prepared and their electrochemical performances are investigated to evaluate the effect of $LiCoO_2$ interlayer at the interface of LiPON / Cu. The crystallinity of the deposited $LiCoO_2$ thin films is confirmed by XRD and Raman analysis. The crystalline $LiCoO_2$ cathode thin film is obtained and $LiCoO_2$ as the interlayer appears to be amorphous. The surface morphology of Cu current collector after cycling of the batteries is observed by AFM. The presence of a 10 nm-thick layer of $LiCoO_2$ at the interface of LiPON / Cu enhances the interfacial adhesion and reduces the interfacial resistance. As a result, Li plating / stripping at the interface of LiPON / Cu during charge/discharge reaction takes place more uniformly on Cu current collector, while without the interlayer of $LiCoO_2$ at the interface of LiPON / Cu, the Li plating / stripping is localized on current collector. The thin film batteries with the interlayer of $LiCoO_2$ at the interface of LiPON / Cu exhibits enhanced initial coulombic efficiency, reversible capacity and cycling stability. The thickness of the anode current collector Cu also appears to be crucial for electrochemical performances of all solid state thin film batteries.

• Restorative Dentistry and Endodontics
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• 제47권1호
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• pp.2.1-2.11
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• 2022

Objectives: This study investigated the impact of micro-computed tomography (micro-CT)-based voxel size on the analysis of material/dentin interface voids and thickness of different endodontic cements. Materials and Methods: Following root-end resection and apical preparation, maxillary premolars were filled with mineral trioxide aggregate (MTA), Biodentine, and intermediate restorative material (IRM) (n = 24). The samples were scanned using micro-CT (SkyScan 1272; Bruker) and the cement/dentin interface and thickness of materials were evaluated at voxel sizes of 5, 10, and 20 ㎛. Analysis of variance and the Tukey test were conducted, and the degree of agreement between different voxel sizes was evaluated using the Bland and Altman method (p < 0.05). Results: All materials showed an increase in thickness from 5 to 10 and 20 ㎛ (p < 0.05). When evaluating the interface voids, materials were similar at 5 ㎛ (p > 0.05), while at 10 and 20 ㎛ Biodentine showed the lowest percentage of voids (p < 0.05). A decrease in the interface voids was observed for MTA and IRM at 20 ㎛, while Biodentine showed differences among all voxel sizes (p < 0.05). The Bland-Altman plots for comparisons among voxel sizes showed the largest deviations when comparing images between 5 and 20 ㎛. Conclusions: Voxel size had an impact on the micro-CT evaluation of thickness and interface voids of endodontic materials. All cements exhibited an increase in thickness and a decrease in the void percentage as the voxel size increased, especially when evaluating images at 20 ㎛.

• 한국멀티미디어학회:학술대회논문집
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• 한국멀티미디어학회 2002년도 추계학술발표논문집
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• pp.482-486
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• 2002

본 논문에서는 기능성 보유 제품에 대한 사용자의 편의성과 효율성을 배려한 인터페이스 제작 기술 고찰의 일환으로 이벤트 스테이트 모델링(Event& State Modeling) 기법을 활용한 HMI (Human -Machine Interface) 모델링의 방법론을 소개하고자 한다. 이벤트 드리븐 형식으로 생성하는 모델 방법론, 스테이트를 기반으로 생성하는 모델링 방법론, 이 두 가지의 장점을 병합하여 개발된 PlayMo라는 저작도구의 이벤트 스테이트 모델 방법론을 분석하고 이를 기반으로 제품 기능 구현의 사실도(fidelity)가 어느 정도까지 가능한지를 제시하고자 한다. 이와 더불어 한 제품의 외관 디자인, 설계 및 정량적 유저 인터페이스(UI:User Interface) 측정의 방법을 사례를 중심으로 소개하고자 한다. 또한 이벤트 스테이트 모델링 방식으로 구성된 컨텐츠를 활용하여 인터랙션과 멀티미디어요소가 강화된 기존의 방식과는 차별화 된 전자 카탈로그, 전자 매뉴얼, 트러블 슈팅 등의 다양한 컨텐츠 활용방안을 제시하여 제품 기획 생산에서 분석 검증 및 마케팅활동, 고객 지원에 이르는 일련의 제품 생산 주기에 따른 데이터 활용 방안을 실제활용 사례를 중심으로 고찰하고자 한다.

• 한국재료학회지
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• 제26권10호
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.