• Membrane and Water Treatment
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• v.15 no.1
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• pp.31-39
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• 2024

The flow in a nanopore of filtration membrane is often multiscale and consists of both the adsorbed layer flow and the intermediate continuum fluid flow. There is a controversy on which interface the slippage should occur in the nanopore filtration: On the adsorbed layer-pore wall interface or on the adsorbed layer-continuum fluid interface? What is the difference between these two slippage effects? We address these subjects in the present study by using the multiscale flow equations incorporating the slippage on different interfaces. Based on the limiting shear strength model for the slippage, it was found from the calculation results that for the hydrophobic pore wall the slippage surely occurs on the adsorbed layer-pore wall interface, however for the hydrophilic pore wall, the slippage can occur on either of the two interfaces, dependent on the competition between the interfacial shear strength on the adsorbed layer-pore wall interface and that on the adsorbed layer-continuum fluid interface. Since the slippage on the adsorbed layer-pore wall interface can be designed while that on the adsorbed layer-continuum fluid interface can not, the former slippage can result in the flux through the nanopore much higher than the latter slippage by designing a highly hydrophobic pore wall surface. The obtained results are of significant interest to the design and application of the interfacial slippage in nanoporous filtration membranes for both improving the flux and conserving the energy cost.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.83-89
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• 1991

The partial discharge properties of interface layer in Mica-Epoxy composite, which has been mainly used for the coil insulating material of high voltage machinery, are different from those of resins due to the abnormal interface layer to be presented between inorganic material and resin. Accordingly, the study on discharge of interface in composite insulting system is strongly requsted for not only an increasing of insulating strength, but also the basical information of diagnosis system for high voltage equipment. As a result, it has been confirmed that the interface is an abnormal resin layer and the contact states at interface is depended upon the density of silane aqueous solution. Pulse frequency at abnormal interface shows a linear increasing with enlargement of discharge quantity. Whereas, in case of normal interface, pulse frequency property represents exponential increasing at the point of saturating. A life model can be diagramed from results of time dependance of skewness, and a survival life time can be quantified from the life model suggested.

• Corrosion Science and Technology
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• v.14 no.4
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• pp.161-165
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• 2015

This paper presents an analysis of thermal stress induced along the interface between a polymeric coating layer and a steel substrate as a result of uniform temperature change. The epoxy layer is assumed to be a linear viscoelastic material and to be theromorheologically simple. The viscoelastic boundary element method is employed to investigate the behavior of interface stresses. The numerical results exhibit relaxation of interface stresses and large stress gradients, which are observed in the vicinity of the free surface. Since the exceedingly large stresses cannot be borne by the polymeric coating layer, local cracking or delamination can occur at the interface corner.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.340-340
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• 2012

최근 MOS 소자들이 게이트 산화막을 Mono-layer가 아닌 Multi-Layer을 사용하는 추세이다. Bulk와 High-k물질간의 Dangling Bond를 줄이기 위해 Passivation 층을 만드는 것을 예로 들 수 있다. 이러한 Double Layer의 쓰임이 많아지면서 계면에서의 Interface State Density의 영향도 커지게 되면서 이를 측정하는 방법에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 $SiO_2$ Double Layer의 Interface State Density를 Conductance Method를 사용하여 구하는 연구를 진행하였다. Wet Oxidation과 Chemical Vapor Deposition (CVD) 공정을 이용하여 $SiO_2$ Double-layer로 증착한 후 Aluminium을 전극으로 하는 MOS-Cap 구조를 만들었다. 마지막 공정은 $450^{\circ}C$에서 30분 동안 Forming-Gas Annealing (FGA) 공정을 진행하였다. LCR meter를 이용하여 high frequency C-V를 측정한 후 North Carolina State University California Virtual Campus (NCSU CVC) 프로그램을 이용하여 Flatband Voltage를 구한 후에 Conductance Method를 측정하여 Dit를 측정하였다. 본 연구 결과 Double layer (Wet/CVD $SiO_2$)에 대해서 Conductance Method를 방법을 이용하여 Dit를 측정하는 것이 유효하다는 것을 확인 할 수 있었다. 본 실험은 앞으로 많이 쓰이고 측정될 Double layer (Wet/CVD $SiO_2$)에 대한 Interface State Density의 측정과 분석에 대한 방향을 제시하는데 도움이 될 것이라 판단된다.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.6D
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• pp.951-960
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• 2006

Structural pavement analysis considering lateral loads of moving vehicle was carried out in order to simulate passing vehicle loads under various interface conditions. To verify of existing multi-layer elastic analysis of layer interface effect parameters, this study compared outputs by using ABAQUS, a three dimensional finite element program and KENLAYER, multi-layer elastic analysis as vertical load was applied to the surface of asphalt pavements. Pavement performance depending on interface conditions was quantitatively evaluated and fundamental study of layer interface effect parameters was performed in this study. As results of the study, if only vertical loads of moving vehicle is applied, subdivision of either fully bonded or fully unbonded is enough to indicate interface effect parameters. On the other hand, when lateral loads are applied with vertical loads, pavement behavior and performance are greatly changed with respect to layer interface conditions. The thinner thickness of the asphalt layer is and the smaller elastic moduli of the asphalt layer is, the more pavement behavior is influenced by interface conditions. In addition, regression analysis equation analytically computing tensile strain which was considered thicknesses and elastic moduli of the asphalt layer and layer interface effect parameters at the bottom of the asphalt layer was presented using database from numerical analyses on national pavement model sections.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10a
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• pp.337-341
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• 1991

Fieldbus is a low level serial digital network which will be used for factory automation. This paper describes lower layer implementation of a Fieldbus network interface. Physical layer provides hardware interface between IBM-PC and Fieldbus. Also, physical layer uses manchester coding, shielded twisted pair lines and RS-485 electrical standard. Data link layer includes Intel's iDCX96 real time executive for 8797 one chip microcontroller and Fieldbus data link protocol software.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1086-1091
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• 2004

The boundary layer is a very important characteristic of a liquid-vapor interface since it governs the heat and mass transfer phenomena across an interface. However, the thickness of a boundary layer is generally micro- or nano-sized, which requires highly accurate measurement devices and, consequently, costs the related experiments very high and time-consuming. Due to these size dependent limitations, the experiments related with a nano-scaled size have suffered from the errors and the reliability of the obtained data. This study is performed to grasp the characteristics of a liquid-vapor interface, by using a molecular dynamics method. The simulation results were compared with other studies if possible. Although other studies reported that there existed a temperature discontinuity over an interface when the system was reduced to micro- or nano-sized, we confirmed that there was no such a temperature discontinuity.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.