• Journal of Welding and Joining
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• v.30 no.5
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• pp.64-69
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• 2012

Sn-Bi eutectic alloy has been widely used as one of the key solder materials for step soldering at low temperature. The Sn-58Bi solder paste containing chloride flux was adopted to compare with that using the chloride-free flux. The paste was applied on the electroless nickel-immersion gold (ENIG) surface finish by stencil printing, and the reflow process was then performed at $170^{\circ}C$ for 10 min. After reflow, the solder joints were aged at $125^{\circ}C$ for 100, 200, 300, 500 and 1000 h in an oven. The interfacial microstructures were obtained by using scanning electron microscopy (SEM), and the composition of intermetallic compounds (IMCs) was analyzed using energy dispersive spectrometer (EDS). Two different IMC layers, consisting of $Ni_3Sn_4$ and relatively very thin Sn-Bi-Ni-Au were formed at the solder/surface finish interface, and their thickness increased with increasing aging time. The wettability of solder joints was investigated by wetting balance test. The mechanical property of each aging solder joint was evaluated by the ball shear test in accordance with JEDEC standard (JESD22-B117A). The results show that the highest shear force was measured when the aging time was 100 h, and the fracture mode changed from ductile fracture to brittle fracture with increasing aging time. On the other hand, the chloride flux in the solder paste did not affect the shear force and fracture mode of the solder joints.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.67-72
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• 1992

The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

• Applied Microscopy
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• v.41 no.2
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• pp.139-145
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• 2011

Parthenocissus tricuspidata is an epiphyte that lacks a main axial stem, but develops adhesive disks along the stem for climbing support. In this study, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) were utilized to examine the brick wall surface and the adhesive disks of P. tricuspidata that attached to the surface successfully. The study was mainly focused the outermost layers of both structures before and after adhesion to find out whether there has been some structural and/or physical interactions between the two. The adhesive disks adhered firmly to the brick wall by secreting adhesive materials that help them for a tight attachment to the surface. The rough wall surface appeared facilitating better attachment of the adhesive disks by infiltrating the materials into those spaces leading to some degree of interactions at the interface. EDS analysis on the outermost layers of the adhesive disks that were separated from the substrates was also consistent with the SEM data on the interaction between the adhesive disks and the substrate surface. EDS analysis of the brick wall surface and the adhesive disks demonstrated similar elements of O, Si, Fe, Al, K, Mg, and Na in their components.

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.30-37
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• 1973

The Nishitani's equations for impedance of anodic oxide films have been derived based on a p-i-n model under the assumption of $\omega$$\varepsilon$$\rho$$_{ο}$<<4$\pi$<<$\omega$$\varepsilon$$\rho$$_{\omega}$, where $\omega$ is angular frequency, $\varepsilon$ is dielectric constant, and $\rho$$_{ο}$ and $\rho$$_{\omega}$ are the resistivity of the interface region and the intrisic region of the anodic oxide film, respectively. Since it is not possible to evaluate all parameters in the equations, however, any clear physical picture cannot be obtained from the equations. Therefore, the equations are modified under the assumption of $\omega$$\tau$$_{\omega}$>>1 and In(1+$\omega$$^2$$\tau$$_{ο}$$^2$)<<1, where $\tau$$_{\omega}$=$\varepsilon$$\rho$$_{\omega}$(4$\pi$) and $\tau$$_{ο}$=$\varepsilon$$\rho$$_{ο}$/(4$\pi$). The modified equations are then used to explain the change in the frequency characteristics of anodic oxide films when they are heated. The change in impedance of anodic oxide films when they are heated is attributed mainly to the increase in the diffusion layer and to the decrease in the resistivity of anodic oxide films.s.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Nuclear Engineering and Technology
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• v.6 no.1
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• pp.14-22
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• 1974

Effects of anodization voltage on frequency characteristics of anodic oxide films on tantalum were analyzed based on the following impedance equatious : (equation omitted) Here $R_{f}$, $C_{f}$ and tan $\delta$$_{f}$ are equivalent series resistance in ohm, equivalent Belies capacitance in farad and dielectric loss, of anodic oxide films respectively Parameters P, $\tau$$_{ο}$, $\tau$$_{\omega}$, and Co are defined as follows: P=(d-w)/w, $\tau$$_{ο}$=$textsc{k}$$\rho$$_{ο}$, $\tau$$_{\omega}$=$textsc{k}$$\rho$$_{\omega}$, $C_{ο}$=$textsc{k}$A/d where d is the thickness of oxide film, $\omega$ is the diffusion layer thickness. $\rho$$_{ο}$ is the resistivity of oxide film at the interface of metal and the oxide, $\rho$$_{\omega}$ is the resistivity of oxide film at intrinsic region and A is the area of the film and $textsc{k}$=0.0885$\times$10$^{-12}$ $\times$dielectric constant, (in farad/cm). It was shown that dielectric loss and frequency dependence of equivalent series capacitance decrease as anodization voltage increases. This is a consequence of the fact that the thickness of diffusion layer increases a little with increasing anodization voltage whereas the total oxide thickness is proportional to the anodization voltage. The ngative deviation of measured values from tile relation, tan $\delta$$_{f}$=0.682 $\Delta$ $C_{f}$, was also discussed based on the Impedance equations given above. Here $\Delta$ $C_{f}$ is the change in capacitance between 0.1 and 1 KHZ.KHZ.Z.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Journal of Information Management
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• v.34 no.4
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• pp.63-84
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• 2003

This research is a case study that describes the NUCLIS21(Nuclear Information System 21), an integrated web-based information management system of KAERI(Korea Atomic Energy Research Institute), implemented to carry out the role of a national nuclear information center with government support as an information infra implementation programme. Through its user-centered single interface, the system aims at building an infrastructure for the national nuclear information center, as well as improving the information management system of the TID(Technical Information Department) within the institute. The system consists of two major parts which are an integrated module of the MIS and six different kinds of system. These include the Integral search system with OPAC, My Library, the Acquisition system, the Catalogue system, the Information Supply system, and the Serial Publication system. The DB is composed of Bibliographical DB, Original text DB and Abstract DB. A special feature of this system was designed as a unified network system through connection to MIS(Management Integration System) of the institute, so users can get research information for projects. Therefore, they have access to available information easily and access to the ongoing service of this system. Furthermore, users can share information by using our system. The survey has it that 75.7%(200 persons), 62.1%(164 persons) and 78.4%(207 persons) of the respondents are satisfied with the fidelity, speediness, and convenience of the system respectively, and the overall satisfaction of the respondents is comparably high.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.353-358
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• 2013

The hot corrosion behavior of plasma sprayed 4 mol% $Y_2O_3-ZrO_2$ (YSZ) thermal barrier coatings (TBCs) with volcanic ash is investigated. Volcanic ash that deposited on the TBCs in gas-turbine engines can attack the surface of TBCs itself as a form of corrosive melt. YSZ coating specimens with a thickness of 430-440 ${\mu}m$ are prepared using a plasma spray method. These specimens are subjected to hot corrosion environment at $1200^{\circ}C$ with five different duration time, from 10 mins to 100 h in the presence of corrosive melt from volcanic ash. The microstructure, composition, and phase analysis are performed using Field emission scanning electron microscopy, including Energy dispersive spectroscopy and X-ray diffraction. After the heat treatment, hematite ($Fe_2O_3-TiO_2$) and monoclinic YSZ phases are found in TBCs. Furthermore the interface area between the molten volcanic ash layers and YSZ coatings becomes porous with increases in the heat treatment time as the YSZ coatings dissolved into molten volcanic ash. The maximum thickness of this a porous reaction zone is 25 ${\mu}m$ after 100 h of heat treatment.

• Proceedings of the ESK Conference
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• 1993.10a
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• pp.20-20
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• 1993

반복적인 일의 수행으로 인한 병인 누적외상병에 관해 살펴보고자 한다. 누적외 상병(Cumulative Trauma Disorders)이란 비교적 생소한 질환으로 손이나 어떤 신체 부위를 반복적으로 오래 사용하였을 때 오는 병이다. 이 질환은 200년전 이탈리아 의사인 Benardino Ramazinni에 의해 분류되었으나 최근까지 큰 관심을 끌지 못했 다. 이 병은 Tennis Elbow(테니스 팔꿈치) 또는 Triger Finger(방아쇠 손가락)등 으로 더 잘 알려져 왔다. 그리고 의학계에서는 Ganglions(수종)으로 알려져 왔다. 그러나 80년대의 탁상컴퓨터의 보급으로 많은 사무실에서 반복적인 작업을 연속적 으로 하게 되어 많은 사무원들이 누적외상병(CTD)으로 고통에 시달리게 되고, 심한 경우에는 수술까지 하게된다. 제안자 역시 이 병으로 손목수술을 받은 바 있는 데 이 병은 잠복기가 몇년씩 되는 직업병이다. 이병의 특성상 암과 같이 조기에 발견 하기 어렵고, 이것을 느꼈을 때는 대부분 너무 늦어 수술이 불가피한 경우가 많다. 본 연구에서는 누적외상병의 실체와 현재까지의 외국에서 수행된 연구결과를 소개하고, 현재 한국에서의 이병의 실태를 파악하기 위해 표본대상을 선정하여 설 문조사와 실측조사를 함께 수행하고자 한다. 표본대상으로 육체노동으로 반복작업 을 하는 (Blue-Color) 집단, 사무실에서 반복작업을 하는 (White-Color) 집단, 그리 고 가정에서 반복작업을 하게 되는 주부집단등으로 나누어 실태조사를 하고자 한다. 설문조사의 통계처리를 바탕으로 한국에서의 누적외상병에 관한 실태조사와 의식구 조까지를 진단해 보고자 한다. 그런 다음 총체적이고 최신의 이론과 연구에 바탕을 둔 해결책과 대안을 제시해 보고자 한다.콘에 대해 일반화시키기는 어려우나 이후에 행해질 Icon-based User Interface 분야의 많은 연구들의 기초가 될 것이다. 더불어 아이콘과 관련된 많은 요인들(문화적 영향, 아이콘 색깔, 크기, 아이콘의 위치등이 인식에 미치는 영향)에 대해서도 연구가 행해져야 할 것이다. 확인하고 각각의 기능을 분명히 했다.가 수월하게 하였고 메모리를 동적으로 관리할 수 있게 하였다. 또한 기존의 smpl에 디버깅용 함수 및 설비(facility) 제어용 함수를 추가하여 시뮬레이션 프로그램 작성을 용이하게 하였다. 예를 들면 who_server(), who_queue(), pop_Q(), push_Q(), pop_server(), push_server(), we(), wf(), printfct() 같은 함수들이다. 또한 동시에 발생되는 사건들의 순서를 조종하기 위해, 동시에 발생할 수 있는 각각의 사건에 우선순위를 두어 이 우선 순위에 의하여 사건 리스트(event list)에서 자동적으로 사건들의 순서가 결정되도록 확장하였으며, 설비 제어방식에 있어서도 FIFO, LIFO, 우선 순위 방식등을 선택할 수 있도록 확장하였다. SIMPLE는 자료구조 및 프로그램이 공개되어 있으므로 프로그래머가 원하는 기능을 쉽게 추가할 수 있는 장점도 있다. 아울러 SMPLE에서 새로이 추가된 자료구조와 함수 및 설비제어 방식등을 활용하여 실제 중형급 시스템에 대한 시뮬레이션 구현과 시스템 분석의 예를 보인다._3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.의 증발산율은 우기의 기상자료를 이용하