• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2577-2582
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• 2013

A novel stick-shaped portable sensing device featuring a microhole array interface between the polyvinylchloride-2-nitrophenyloctylether (PVC-NPOE) gel and water phase was developed for in-situ sensing of perchlorate ions in real water samples. Perchlorate sensitive sensing responses were obtained based on measuring the current changes with respect to the assisted transfer reaction of perchlorate ions by a perchlorate selective ligand namely, bis(dibenzoylmethanato)Ni(II) (Ni(DBM)2) across the polarized microhole array interface. Cyclic voltammetry was used to characterize the assisted transfer reaction of perchlorate ions by the $Ni(DBM)_2$ ligand when using the portable sensing device. The current response for the transfer of perchlorate anions by $Ni(DBM)_2$ across the micro-water/gel interface linearly increased as a function of the perchlorate ion concentration. The technique of differential pulse stripping voltammetry was also utilized to improve the sensitivity of the perchlorate anion detection down to 10 ppb. This was acquired by preconcentrating perchlorate anions in the gel layer by means of holding the ion transfer potential at 0 mV (vs. Ag/AgCl) for 30 s followed by stripping the complexed perchlorate ion with the ligand. The effect of various potential interfering anions on the perchlorate sensor was also investigated and showed an excellent selectivity over $Br^-$, $NO_2{^-}$, $NO_3{^-}$, $CO{_3}^{2^-}$, $CH_3COO^-$ and $SO{_4}^{2^-}$ ions. As a final demonstration, some regional water samples from the Sincheon river in Daegu city were analyzed and the data was verified with that of ion chromatography (IC) analysis from one of the Korean-certified water quality evaluation centers.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.1
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• pp.90-97
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• 1991

A stepping motor can be driven with open-loop or closed-loop control. The major disadvantage of open-loop control is that it is subjected to resonance and instability in certain speed range, and that there is no way to check stalling or error in position. In this paper, a closed-loop control system consisting of a microcomputer, a hybrid stepping motor, a drive, a lead screw, and an encoder which is used as a position sensor is developed. A control program is programmed in assembly language for real time control and the versatile interface adapter(VIA) is used as the interface with the microcomputer. The experimental results of the stepping motor were eliminated on all kinds of inertia load, and maximum start stop pulse rate and maximum slewing pulse rate were also increased about twice respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1666-1671
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• 1989

A novel switched-capacitor circuit for interfacing capacitive microtransducers with a digital system is developed based on the dual-slope integration. It consists of a differential integrator and a comparator. Driven by the teo phase clock, the circuit first senses the capacitance difference between the transducer and the reference capacitor in the form of charge, and accumulates it into the feedback capabitor of the integrator for a fixed period of time. The resulant accumulated charge is next extracted by the known reference charge until the integrator output voltage refurns to zero. The length of time required for the integrator output to return to zero, as measured by the number of clock cycle gated into a counter is proportional to the capacitance difference, averaged over the integration period. The whole operation is insensitive to the reference voltage and the capacitor values involved in the circuit, Thus the proposed circuit permits an accurate differental capacitance measurement. An error analysis has showh that the resolution as high as 8 bits can be expected by realizing the circuit in a monolithic MOS IC form. Besides the accuracy, it features the small device count integrable onto a small chip area. The circuit is thus particularly suitadble for the on-chip interface.

• 한국HCI학회:학술대회논문집
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• 2007.02a
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• pp.573-577
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• 2007

터치 센서를 이용한 휴대단말용 인터페이스가 다양하게 개발되면서 차세대 인터랙션 수단으로서 많은 주목을 받고 있지만, 버튼 인터페이스에 비해 오동작에 취약하고 터치 인터페이스만의 차별성을 확보하지 못하고 있는 실정이다. 본 논문에서는 터치 드래그 동작을 주요 인터랙션 수단으로 활용한 모바일 기기용 사용자 인터페이스를 개발하여 오동작을 최소화하고 사용자가 조작할 때 즐거움을 줄 수 있는 UI 요소로 활용할 수 있도록 하였다. 본 논문에서 개발한 터치 인터페이스는 기기의 내부/외부 방향의 스크롤 동작을 각각 drag-in/drag-out 동작으로 칭하고 이러한 드래그 동작을 응용 프로그램의 실행과 종료에 할당하였으며 터치 센서를 따라 움직이는 스크를 동작은 기존과 동일하게 일반적인 스크롤 행위를 지시하는데 적용하였다. 제안한 인터랙션 방법은 터치 센서의 형태에 따라 크게 두 가지 방식으로 구현하였다. 첫 번째 방법은 기기 스크린 외곽에 터치 센서를 이열(二列) 배치하여, 터치스크린을 사용하지 않고도 스크린 주변의 터치 센서를 활용한 drag-in/out 동작의 감지가 가능하도록 하였다. 두 번째 구현 방법은 정전용량형 터치 센서 IC를 활용해 터치 스크린 기능과 함께 스크린 주변의 기기 케이스의 일부까지도 사용자의 접촉을 감지할 수 있도록 하였다. 기존 저항 방식 터치 스크린과 달리 본 논문에서 활용한 방식은 스크린과 케이스에서 동시에 터치를 감지할 수 있으며, 다접점 감지 알고리즘의 개발로 두 개의 손가락을 이용한 다양한 터치 인터랙션으로 활용할 수 있다.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.68-73
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• 2009

This paper presents an easily modifiable structure of a serial peripheral interface (SPI) that is suitable for efficient testing of CMOS RF integrated circuits. The proposed SPI Is designed so that the address size and the accompanying software can be easily adjusted and modified according to the requirements and complexity of RF IC's under development. The hardware architecture and software algorithm to achieve the flexibility are described. The proposed SPI is fabricated in $0.13{\mu}m$ CMOS and successfully verified experimentally with a 2.7GHz fractional-N delta-sigma frequency synthesizer as a device under test.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.27-33
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• 2011

Recently many display devices support the digital display interface as display market growth. DisplayPort is a next generation display interface at the PC, projector and high definition content applications in more widely used connection solution development. This paper implements multiple streams based on the behavior of the main link that is suitable for the display port v1.1a standard. The limit point of Displayport, interface between the Sink Device and Sink Device is also implemented. And two or more differential image data are enable to output the result through four Lanes stated in display port v1.1a, of two or more display devices without the addition of a separate Lane. The Multiple Video Streaming Controller is implemented with 6,222 ALUTs and 6,686 register, 999,424 of block memory bits synthesized using Quartus II at Altera Audio/Video Development board (Stratix II GX FPGA Chip).

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.88-94
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• 1997

The oxidation behavior of the NiCrAlY bond coat and thermal fatigue failure in the plasma-sprayed thermal barrier coating system, ZrO2.8wt%Y2O3 top coat/Ni-26Cr-5Al-0.5Y bond coat/Hastelloy X superalloy substrate, in commercial use for finned segment of gas turbine burner were investigated. The main oxides formed in the bond coat were NiO, Cr2O3, and Al2O3. It divided the oxide distribution at this interface into two types whether an Al2O3 thin layer existed beneath ZrO2/bond coat interface before operation at high temperature or not. While a continuous layer of NiO was formed mainly in the region where the Al2O3 thin layer was present, the absence of it resulted in the formation of mixture of Cr2O3 and Al2O3 beneath NiO layer. Analyses on the fracture surface of specimen spalled by thermal cycling showed that spalling occurred mainly along the ceram-ic coat near ZrO2/bond coat oxide layer interface, but slightly in the oxide layer region.

• Journal of Mechanical Science and Technology
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• v.16 no.8
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• pp.1109-1116
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• 2002

To investigate the effect of nitriding layer on both fatigue crack initiation and fatigue life, turbine rotor steel ( IC.- 1Mo-0.25V steel) specimens were nitrided by the nitemper method and then put to a rotary bending fatigue test at room and elevated temperatures. In nitriding, temperature and time were controlled to obtain a different nitrided thickness. Microstructure analysis, micro-Victors hardness test, and scanning electron microscope observation were carried out for evaluating experiments. In results, the fatigue cracks of nitrided specimens were initiated at inclusion near the interface between nitrided layer and substrate, which showed fish-eye type appearance in fractograph. The fatigue life of nitrided specimens at every temperature was prolonged compared to that of the non-nitrided. However, there was not observable improvement in fatigue characteristics with the increase of a nitrided thickness.

• ETRI Journal
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• v.24 no.6
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• pp.455-461
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• 2002

This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.