• Title/Summary/Keyword: inter-electrode distance

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Fabrication and Electrical Characteristics of a Lateral type GaN Field Emission Diode

  • Lee, Jae-Hoon;Lee, Hyung-Ju;Lee, Myoung-Bok;Hahm, Sung-Ho;Lee, Jung-Hee;Choi, Kue-Man
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.647-650
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    • 2002
  • A lateral type GaN field emission diodes were fabricated by utilizing metal organic chemical vapor deposition (MOCVD). In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for 7 ${\mu}m$ gap and an emission current of ${\sim}580$ nA/10tips at anode-to-cathode voltage of 100 V These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance.

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The Chemical Structure and Photoconductivity Properties of Thin Films Fabricated by Plasma Polymerization Method (플라즈마 중합법에 의해 제작된 PHENYL ISOTHIOCYANATE 박막의 화학적구조와 광전도 특성)

  • Kim, Sung-O;Park, Bok-Kee;Kim, Du-Seok;Park, Jin-Kyo;Choi, Chung-Seong;Lee, Duck-Chool
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1555-1559
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    • 1997
  • The thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56[MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was found that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

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Electrical Compound Action Potential: Effects of different parameters (전기 자극 청신경 복합활동전위: 변인 영향)

  • Heo, S.D.
    • Journal of rehabilitation welfare engineering & assistive technology
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    • v.8 no.1
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    • pp.9-17
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    • 2014
  • Electrical compound action potential (ECAP) can be recorded on cochlear implant. This study will investigate stimulation and recording to enhance the efficacy of ECAP. 34 articles was used. We analyzed pulse and stimulating condition, artifact suppression, recording condition. The cathod-leading biphasic pulse was used with as short as possible pulse width and inter phase gap for the efficacy of neural firing, stable threshold and preventing neural degeneration. Around C-level was stimulated to apical, middle and basal turn of cochlea. Artifact was eliminated by forward-masking, template-subtraction technique. For clearer waveform, we need to change distance between stimulating and recording electrode, the gain of amplification, number of average.

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Metal Vapor Laser Research II. (금속증기레이저 연구 II)

  • 이재경;정환재;임기건;이형종;정창섭;김진승
    • Korean Journal of Optics and Photonics
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    • v.3 no.3
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    • pp.178-182
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    • 1992
  • An air-cooled discharge-heated copper-vapor laser system with its inter-electrode distance of 45 cm has been developed by utilizing an alumina ceramic plasma tube of 1.6 cm in diameter and 50 cm in lengih. For operating the laser, a dc high voltage power supply with output rating of 6 kV and 500 mA, a resonant charging circuitry consisting partly of an 1.8 H inductor assembly and a 5 nF storage capacitor, and a thyratron driver operating up to 7 kHz have also been developed. The present laser system starts lasing at the tube temperature of about $1350^{\circ}C$ and an maximum average output power of 0.7 W has been obtained at 12 kV, 4.5 kHz. 50 mbar of Ne buffer gas pressure, and at the tube temperature of $1460^{\circ}C$.

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Understanding of Non-Thermal Atmospheric Pressure Plasma Characteristics Produced in Parallel Plate Type Geometry

  • Choe, Wonho;Moon, Se Youn;Kim, Dan Bee;Jung, Heesoo;Rhee, Jun Kyu;Gweon, Bomi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.144-144
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    • 2013
  • Non-thermal atmospheric pressure plasmas have recently garnered much attention due to their unique physical and chemical properties that are sometimes significantly different from those of low pressure plasmas. It can offer many possible application areas including nano and bio/medical areas. Many different types of plasma sources have been developed for specific needs, which can be one of the important merits of the atmospheric pressure plasmas since characteristics of the produced plasma depend significantly on operating parameters such as driving frequency, supply gas type, driving voltage waveform, gas flow rate, gas composition, geometrical factor etc. Among many source configurations, parallel plate type geometry is one of the simplest configurations so that it can offer many insights for understanding basic underlying physics. Traditionally, the parallel plate type set up has been studied actively for understanding low pressure plasma physics along with extensive employment in industries for the same reason. By considering that understanding basic physics, in conjunction with plasma-surface interactions especially for nano & bio materials, should be pursued in parallel with applications, we investigated atmospheric pressure discharge characteristics in a parallel plate type capacitive discharge source with two parallel copper electrodes of 60 mm in diameter and several millimeters in gap distance. In this presentation, some plasma characteristics by varying many operating variables such as inter-electrode distance, gas pressure, gas composition, driving frequency etc will be discussed. The results may be utilized for plasma control for widening application flexibility.

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Measurement of Electron Temperature and Number Density and Their Effects on Reactive Species Formation in a DC Underwater Capillary Discharge

  • Ahmed, Muhammad Waqar;Rahman, Md. Shahinur;Choi, Sooseok;Shaislamov, Ulugbek;Yang, Jong-Keun;Suresh, Rai;Lee, Heon-Ju
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.118-128
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    • 2017
  • The scope of this work is to determine and compare the effect of electron temperature ($T_e$) and number density ($N_e$) on the yield rate and concentration of reactive chemical species ($^{\bullet}OH$, $H_2O_2$ and $O_3$) in an argon, air and oxygen injected negative DC (0-4 kV) capillary discharge with water flow(0.1 L/min). The discharge was created between tungsten pin-to pin electrodes (${\Phi}=0.5mm$) separated by a variable distance (1-2 mm) in a quartz capillary tube (2 mm inner diameter, 4 mm outer diameter), with various gas injection rates (100-800 sccm). Optical emission spectroscopy (OES) of the hydrogen Balmer lines was carried out to investigate the line shapes and intensities as functions of the discharge parameters such as the type of gas, gas injection rate and inter electrode gap distances. The intensity ratio method was used to calculate $T_e$ and Stark broadening of Balmer ${\beta}$ lines was adopted to determine $N_e$. The effects of $T_e$ and $N_e$ on the reactive chemical species formation were evaluated and presented. The enhancement in yield rate of reactive chemical species was revealed at the higher electron temperature, higher gas injection rates, higher discharge power and larger inter-electrode gap. The discharge with oxygen injection was the most effective one for increasing the reactive chemical species concentration. The formation of reactive chemical species was shown more directly related to $T_e$ than $N_e$ in a flowing water gas injected negative DC capillary discharge.

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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Numerical Modeling of Very High Frequency Multi Hollow Cathode PECVD (Very High Frequency Multi Hollow Cathode PECVD 장치의 수치모델링)

  • Joo, Jung-Hoon
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.331-340
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    • 2010
  • 3D fluid based numerical modelling is done for a VHF multi hollow cathode array plasma enhanced chemical vapor deposition system. In order to understand the fundamental characteristics of it, Ar plasma is analyzed with a condition of 40 MHz, 100 Vrf and 1 Torr. For hole array of 6 mm diameter and 20 mm inter-hole distance, plasma is well confined within the hole at an electrode gap of 10 mm. The peak plasma density was $5{\times}10^{11}#/cm^3$ at the center of the hole. When the substrate was assumed at ground potential, electron temperature showed a peak at the vicinity of the grounded walls including the substrate and chamber walls. The reaction rate of metastable based two step ionization was 10 times higher than the direct electron impact ionization at this condition. For $H_2$, the spatial localization of discharge is harder to get than Ar due to various pathways of electron impact reactions other than ionization.

The basic experiments for the fabrication of the SPUDT type Inter using the SFIT type filter (SFIT형태를 이용한 SPUDT형 필터제작에 관한 기초실험)

  • You, Il-Hyun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.10
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    • pp.1916-1923
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    • 2007
  • We have studied to obtain the SAW filter for the passband was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and thin we performed computer-simulated by simulator. We cm fabricate that the block weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have performed to obtain the properly design conditions about phase shift of the SAW filter for WCDMA. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are $5000\;{\AA}$ and $3.6{\mu}m$ respectively. And we have employed that the distances from the hot electrode to the reflector are $2.0{\mu}m$, $2.4{\mu}m$ and the distance from the hot electrode to the ground is $1.5{\mu}m$ respectively. Frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 7,8MHz. And we could obtain that return loss is less then -18dB, ripple characteristics is probably 3dB and triple transit echo is less then -25dB after when we have matched impedance.

CdZnTe Detector for Computed Tomography based on Weighting Potential (가중 퍼텐셜에 기초한 CT용 CdZnTe 소자 설계)

  • Lim, Hyunjong;Park, Chansun;Kim, Jungsu;Kim, Jungmin;Choi, Jonghak;Kim, KiHyun
    • Journal of radiological science and technology
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    • v.39 no.1
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    • pp.35-42
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    • 2016
  • Room-temperature operating CdZnTe(CZT) material is an innovative radiation detector which could reduce the patient dose to one-tenth level of conventional CT (Computed Tomography) and mammography system. The pixel and pixel pitch in the imaging device determine the conversion efficiency of incident X-or gamma-ray and the cross-talk of signal, that is, image quality of detector system. The weighting potential is the virtual potential determined by the position and geometry of electrode. The weighting potential obtained by computer-based simulation in solving Poisson equation with proper boundaries condition. The pixel was optimized by considering the CIE (charge induced efficiency) and the signal cross-talk in CT detector system. The pixel pitch was 1-mm and the detector thickness was 2-mm in the simulation. The optimized pixel size and inter-pixel distance for maximizing the CIE and minimizing the signal cross-talk is about $750{\mu}m$ and $125{\mu}m$, respectively.