• Journal of the Optical Society of Korea
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• 제11권1호
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• pp.1-5
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• 2007

We investigate the efficiency of an optical intensity modulator based on an electrically tunable $LiNbO_3$ reflection grating. Assuming a grating coupling coefficient and the waveguide propagation loss, waveguide length is varied to find its effect on the modulator slope efficiency and the device capacitance. With the low propagation loss of the $LiNbO_3$ waveguide, a very efficient optical intensity modulator can be achieved for a low frequency (${\sim}1GHz$) as long as the requirement for the grating coupling coefficient is satisfied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.282-285
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• 1999

Fabrication and pakaging method for low delve voltage and 10Gbps Ti diffused waveguide LiNbO$_3$ optical intensity modulator are described. Optical waveguides were prepared by conventionaly electron-beam evaporation and Ti-indiffusion into Z-cut plate LiNbO$_3$. Traveling-wave electrodes were used for obtaining the wideband frequency response and impedance matching. Microwave effective index and characteristic impedance measured by time domain reflectometry and compared with the calculated value by conformal mapping. The characteristics of 10Gbps modulator at the 1550nm wavelength are as follows : perfect modulation voltage Is about 5V, optical insertion loss Is about 5dB, 3-dB bandwidth is 10GHz, and characteristic impedance is about 50$\Omega$.

• 전기전자학회논문지
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• 제19권1호
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• pp.27-32
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• 2015

A flexible and tunable microwave photonic filter based on adjustable optical frequency comb source is demonstrated. We use a combination of a dual parallel Mach Zehnder modulator and an intensity modulator to generate fifteen comb lines with proper weights to implement a desired filter. The optical comb weights, corresponding to the tap coefficients of the filter, are flexibly changed by adjusting the operation parameters of the modulators. The achieved bandwidth and stopband attenuation of the tunable filter are 0.7 GHz and 20 dB, respectively. In addition, we overcome the undesired low frequency suppression appeared in a conventional scheme by applying a dual parallel Mach Zehnder modulator for single sideband suppressed carrier modulation.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.178-179
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• 2002

We generate optical millimeter-waves by double-sideband suppressed carrier (DSB-SC) modulation using a Mach-Zehnder (MZ) modulator biased at the minimum power. The DSB-SC modulation allows the high-frequency intensity modulation for millimeter-wave generation at the twice of the MZ modulator driving frequency.

• Journal of the Optical Society of Korea
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• 제1권1호
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• pp.44-47
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• 1997

The integration of a GaAs/AlGaAs multi-quantum well electroabsorption modulator and a tapered waveguide vertical direction optical interconnect has been performed without the complicated regrowth process. Zn impurity-induced layer disordering of MQW layer is used to achieve the energy transfer between SQW and MQW regions. Light coupled into a SQW region was transferred to an MQW region and an intensity modulation of 10 dB extinction ratio was demonstrated.

• Journal of the Optical Society of Korea
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• 제18권6호
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• pp.739-745
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• 2014

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• 대한전자공학회논문지SD
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• 제41권10호
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• pp.41-49
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• 2004

LD(laser diode)나 광변조기를 이용하는 광송신단에 존재하는 비선형 변조 특성은 SCM 시스템과 같은 아날로그 광통신 시스템의 성능을 심각하게 제한한다. 따라서 본 논문에서는 전기적 전치왜곡기를 이용하여 LD와 광변조기의 비선형 특성을 보상하였다. LD의 직접변조 방식에서는 877.5 MHz와 882.5 MHz의 두 신호를 이용하여 비선형 왜곡보상 실험을 하였으며, 3차혼변조 신호의 크기를 19 dB 개선하였다. 그리고 광변조기의 경우는 1.8975 GHz와 1.9025 GHz의 두 신호를 이용하여 21 dB의 3차 혼변조 신호를 개선하였다. 또한 LD와 광변조기의 동적 동작영역을 각각 5 dB/Hz/sup ⅔/와 7 dB/Hz/sup ⅔/ 개선하였다.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.288-291
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• 2014

This paper presents a new method for measuring the half-wave voltage $V_{\pi}$ of an electro-optic phase modulator based on a phase-modulated photonic link with interferometric demodulation. By using this method, the $V_{\pi}$ can be obtained with the RF voltage amplitude input required to achieve 1-dB gain compression of link and the differential delay of a Mach-Zehnder interferometer. We measure the $V_{\pi}$ of a commercial phase modulator by using the presented method and the carrier/the first sideband intensity ratio method. Furthermore, we compare the two measurements with the typical value provided by the manufacturer. The experiment shows that this novel measurement method is feasible, straightforward, and accurate.

• Current Optics and Photonics
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• 제1권2호
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• pp.85-89
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• 2017

It is shown that polarization singularities of a new type, namely U and P singularities, arise at the transverse cross section of a partially coherent beam, instead of the common singularities such as C points and L lines in a completely coherent vector field. A relationship between the two kind of singularities with respect to intensity is proposed. We also present a setup that can generate the new singularities, and any desired distribution of degree of polarization, using intensity control.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.34-35
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• 2000

A Y-branch phase modulator made of an electro-optic(EO) polymer has been designed and fabricated. An EO polymer, PMMA-DR1, is used for the core layer, and UV-curable polymers, UV-15 and UV-15 LV, for the cladding layers. The rib type polymeric waveguides are fabricated by the reactive ion etching method and their EO effects are obtained by the poling process. The optical properties of the fabricated phase modulator are as follows: the halfwave voltage, $V_{\pi}$, is 25 V, the insertion loss of TM mode is 13.8 dB, and the intensity modulation is 0.17 % (V).