• Journal of Mechanical Science and Technology
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• v.20 no.4
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• pp.505-512
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• 2006

This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• Journal of the Korean Society of Clothing and Textiles
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• v.44 no.3
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• pp.427-440
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• 2020

This study developed a vest prototype capable of monitoring body temperature using textile electrodes to prevent the sudden death of babies as well as to determine the quality of developed products by evaluating usability with commercial products. Based on the results of the 7th Size Korea Project, a basic pattern for a vest prototype was drafted by applying the average size of two-year-old Korean babies. Two prototypes were the detachable (VEST I) and integrated textile electrodes vest type (VEST II), which followed the same design. The materials were 100% cotton single jersey (SJ) and double jersey (DJ). Six experts evaluated the usability of the developed vests (VEST I & VEST II) and commercial product (VEST M). The single-layer woven textile electrode appeared to have a slightly higher conductivity than the double-layer one. There was no statistical difference in the body temperature sensing function between VEST I and VEST II. Finally, the superiority of the VEST I was verified through a comparison with commercial products (VEST M). The usability test suggested that a wearable smart clothing system of the integrated conductive textile could be further commercialized for bio-monitor applications in Ubiquitous-health care.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.117-124
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• 2005

Electrochemical oxidation of ethanol at nickel electrodes has been studied in 1 M KOH solution containing 0.20M ethanol using electrochemical impedance spectroscopy. Equivalent circuits have been worked out by simulating the impedance data, and the results were used to model the oxidation of ethanol as well as the passivation of the electrode. The maximum rate of oxidation of $Ni(OH)_2$ to NiOOH was observed at about 0.37V vs. Ag/AgCl reference electrode, while the maximum rate of ethanol oxidation at the Ni electrode was observed at about 0.42V, The charge-transfer resistance for oxidation of the electrode itself became smaller in the presence of ethanol than in its absence. These results suggest that the $\beta-Ni(OH)_2/\beta-NiOOH$ redox couple is acting as an effective electron transfer mediator far ethanol oxidation. The kinetic parameters also were obtained by the experimental and simulated results.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.441-445
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• 2007

In this paper we demonstrated the applications of OTFTs (organic thin film transistors) to flexible displays such as AM-EPD (active matrix electrophoretic display) and AM-OLED (active matrix organic light emitting diode), and also to integrated circuits. The OTFTs using pentacene semiconductor layer and PVP gate dielectric and Au S/D electrodes exhibited good performance for AM-EPD with the mobility of $0.59\;cm^{2}/V.sec,$ and with also good uniformity over 2.5" diagonal area. However, it is nor enough for AM-OLED requiring the mobility larger than $1\;cm^{2}/V.sec$ for large area displays. The integrated circuits also worked, producing the operating frequency of 1MHz. We need to develop a fabrication process to reduce parasitic capacitance for high frequency operation.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.16-19
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• 2015

A wearable sensing ECG T-shirt for ubiquitous vital signs sensing is proposed. The sensor system consists of a signal processing board and capacitive sensing electrodes which together enable measurement of an electrocardiogram (ECG) on the human chest with minimal discomfort. The capacitive sensing method was employed to prevent direct ECG measurement on the skin and also to provide maximum convenience to the user. Also, low power integrated circuits (ICs) and passive electrodes were employed in this research to reduce the power consumption of the entire system. Small flexible electrodes were placed into cotton pockets and affixed to the interior of a worn tight NIKE Pro combat T-shirt. Appropriate signal conditioning and processing were implemented to remove motion artifacts. The entire system was portable and consumed low power compared to conventional ECG devices. The ECG signal obtained from a 24 yr. old male was comparable to that of an ECG simulator.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.5
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• pp.54-60
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• 2011

This paper presents characteristics of frequency-dependent grounding impedance and transient grounding impedance for the carbon compound grounding electrode used in the installation of computerized electronic equipment and lightning protection system. The frequency-dependent grounding impedances were measured by applying sinusoidal currents in the frequency range from 100 [Hz] to 10[MHz], and the transient grounding impedances were examined by subjecting the impulse current with the front-time between 1~80[${\mu}s$]. As a result, the ground resistance of the carbon compound grounding electrode is less than that of another type grounding electrodes. The transient grounding impedance is relatively low and the conventional grounding impedance is rather lower than the ground resistance. The frequency-dependent grounding impedance of the carbon compound grounding electrode is capacitive and the grounding impedance is decreased with increasing the frequency of injected currents. Therefore in the case that the carbon compound grounding electrode is jointly used with large-scaled grounding electrodes, it is possible to reduce the high frequency grounding impedance of the integrated grounding electrode system.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.103-107
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• 2002

Metal/ferroelectric/semiconductor field effect transistors(MFSFET′s) with various gate electrodes, that are aluminum, platinum and poly-Si, using rapid thermal annealed $LiNbO_3$/Si(100) structures were fabricated and the properties of the FET′s have been discussed. The drain current of the "on" state of FET with Pt electrode was more than 3 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 1.5 V, which means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about $10^3$ s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.