• The Journal of Information Systems
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• v.10 no.1
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• pp.5-25
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• 2001

The main purpose of this paper is to develop a Delphi Decision Support System based on the web, which can improve the conventional Delphi method. Among major drawbacks of the conventional Delphi methods are cost and efforts to distribute and collect the questionnaire by the regular mail and the tardiness in collecting, categorizing, analyzing, and reporting the result of the questionnaire. With the proposed Delphi Decision Support System, the moderator sends the e-mail to invite the member of panels so that they may visit the homepage of the Delphi Decision Support System. When the panelists input their opinions about the issues, the Delphi Decision Support System analyzes the inputs and reports the result without delay. To implement the Delphi Decision Support System, we integrated Microsoft SQL Server 6.5, jdbcKona/MS SQLServer 4 JDBC driver, and Java Development Kit 1.2

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.52-55
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• 2006

The driving-current degradation of a-Si:H thin-film transistor(TFT) device has been analyzed for the first time. A method to analyze the performance of TFT circuits is presented, which is different from the conventional one by threshold voltage shift method. It can be also used to evaluate the performance of gate driver on array (GOA) circuit, which is integrated in a 12.1" WXGA ($1280{\ast}3{\ast}800$) TFT-LCD panel.

• ETRI Journal
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• v.20 no.1
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.9
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• pp.2358-2367
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• 1994

This paper presents techniques for evaluation and compensation of total measuring errors in a commercial CMM. The probe errors as well as the machine geometric errors are assessed from probing of the mechanical artefacts such as shpere, step, and rings. For the error compensation, the integrated volumetric error equations are considered, including the probe error adn the machine geometric error. The error compensation is performed on the absolute scale coordinate system, in order to overcome the redundant degree of freedom in the CMM with multi-axis probe. A interface box and corresponding software driver are developed for data intercepting/correction between the machine controller and machine, thus the volumetric errors can be compensated in real time with minimum interference to the operating software and hardware of a commercial CMM. The developed system applied to a practical CMM installed on the shop floor, and demonstrated its performance.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.17 no.8
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• pp.741-746
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• 2007

In this study, transfer path identification and output estimation are simulated by multi-dimension spectral analysis method (MDSA). Multi -input/single-output system give expression the vehicle suspension which each inputs are correlated reciprocally. In case of correlating with inputs, the system needs separating the each input signal by MDSA. Main simulations are about finding effective input by coherent output spectrum and selecting optimal input's number by multiple coherence function. Also, by shielding transfer path of each input, transfer path characteristic is identified in terms of overall integrated contribution level.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.969-972
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• 2000

In this paper, a controller design for brushless linear motor is proposed. The designed controller is mainly composed of speed and current controller, which are carried out by the high-speed digital signal processor(DSP). In addition the PWM inverter is controlled by space voltage PWM method. This system is implemented using by 32-bit DSP(TMS320C31), a high-integrated logic device(EPM7128), and IPM(Intelligent Power Module) for compact and powerful system design. The experimental results show the effective performance of controller for the brushless linear motor.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.172-175
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• 2005

a-Si TFT는 TFT-LCD의 화소 스위칭(swiching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압의 이동이다. 펄스(pulse)형태로 인가되는 gate 전압에 의한 문턱 전압 이동은 a-Si:H gate에 인가되는 펄스의 크기, duty cycle, drain pulse의 크기 및 동작 온도에 기인하며 실험결과를 통해 입증된다. 초기의 DC Stress 측정 Data를 이용하여 문턱전압이동을 모델링/시뮬레이션한 결과 a-Si:H gate 회로설계 및 펄스 조건에 따라 stress시간에 따른 gate의 출력 파형 예측이 가능하고 상온에서 Von=21V를 인가한 결과, 약 4년후에서 시프트레지스터 출력 파형이 열화되기 시작한다.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1429-1430
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• 2015

The present study developed an air flow generator system with standard syringes usually adapted for spirometer calibration. It consisted of servo-motor, driver, linear robot, and controller operating as a whole integrated system capable of generating air flows at different speeds on two identical 3L syringes. Experiments demonstrated high accuracy in both flow and volume generation as required such that relative errors were approximately 2.1% and 0.5%, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.325-328
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• 2002

We developed a high performance 2.2" active matrix OLED display for IMT-2000 mobile phone. Scan and Data driver circuits were integrated on the glass substrate, using low temperature poly-Si(LTPS) TFT CMOS technology. High efficiency EL materials were employed to the panel for low power consumption. Peak luminescence of the panel was higher than 250cd/$m^2$ with power consumption of 200mW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.353-356
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• 1996

Ultra-high-speed analog and digital ICs (integrated circuits) fur 10Gbit/sec optical communication systems have been designed, fabricated and analyzed in this research. These circuits, which are laser diode (LD) driver, pre-amplifier, automatic gain controlled (AGC) amplifier, limiting amplifier and decision circuit, have been implemented with AIGaAs/GaAs heterojunction bipolar transistors (HBTs). The optimized AIGaAs/GaAs HBTs for the 10Gbps circuits in this work showed the cutoff and maximum oscillation frequencies of 65㎓ and 53㎓, respectively. It is demonstrated in this paper that the 10Gbps optical communication system can be realized with the ICs designed and fabricated using AlGaAs/GaAs HBTs.