• Title/Summary/Keyword: insulating layer

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Effect of ceramic powder addition on the insulating properties of polymer layer prepared by dip coating method

  • Kim, S.Y.;Lee, J.B.;Kwon, B.G.;Hong, G.W.
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.1
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    • pp.14-18
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    • 2014
  • The mechanical, electrical and thermal characteristics of insulating materials may significantly affect the performance and reliability of electrical devices using superconductors. General method to provide insulating layer between coated conductors is wrapping coated conductor with Kapton tape. But uniform and compact wrapping without failure or delamination in whole coverage for long length conductor is not a simple task and need careful control. Coating of insulating layer directly on coated conductor is desirable for providing compact insulating layer rather than wrapping insulating layers around conductor. Ceramic added polymer has been widely used as an insulating material for electric machine because of its good electrical insulating properties as well as excellent heat resistance and fairy good mechanical properties. The insulating layer of coated conductor should have high breakdown voltage and possesses suitable mechanical strength and maintain adhesiveness at the cryogenic temperature where it is used and withstand stress from thermal cycling. The insulating and mechanical properties of polymer can be improved by adding functional filler. In this study, insulating layer has been made by adding ceramic particles such as $SiO_2$ to a polymer resin. The size, amount and morphology of added ceramic powder was controlled and their effect on dielectric property of the final composite was measured and discussed for optimum composite fabrication.

Manufacturing technology of two-layer self bonding insulating tape (이중절연 자기융착테이프 제조기술)

  • 조용석;이철호;심대섭
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.890-893
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    • 2001
  • Two-layer self bonding insulating tape consists of butyl rubber(IIR ; Isobutylene-isoprene rubber) adhesive layer and polyethylene protective film. Butyl rubber have inherent characteristics such as resistance to corrosion and water, low temperature flexibility, excellent electrical insulating properties also resistance to environmental effect such as ozone and ultraviolet. Polyethylene film was used for the purpose of good insulating properties and resistance to ozone and ultraviolet. The tape was manufactured using extrusion and calender method.

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In-Process Measurement of Insulating Layer in ELID-Grinding (ELID 연삭에서 부도체 피막의 실시간 계측)

  • Kim, Hwa-Young;Ahn, Jung-Hwan;Seo, Young-Ho
    • Proceedings of the KSME Conference
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    • 2001.06c
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    • pp.71-76
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    • 2001
  • In general, it is known that the wear rate of the abrasive and the removal rate of the metal bond of the grinding wheel should be balanced to maintain the depth of the insulating surface layer to an appropriate level. In order to accomplish, the high quality ELID grinding, therefore, it is necessary to measure the depth of the insulating layer in real-time and then to control the electrolytic conditions to keep the depth to a certain level. In this study, an in-process measurement system of the insulated layer using two gap sensors - a capacitor type and an eddy current type - developed and the change of the status of the insulated layer during ELID grinding is detected. And from the experimental data, we have chosen the best mathematical model to predict the depth of the insulating layer.

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반도체 검출기의 절연 최적화를 위한 다층 절연막 평가

  • Park, Jeong-Eun;Myeong, Ju-Yeon;Kim, Dae-Guk;Kim, Jin-Seon;Sin, Jeong-Uk;Gang, Sang-Sik;Nam, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.372-372
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    • 2014
  • 반도체 검출기는 입사되는 X선 에너지에 의하여 이온화되어 발생하는 전자 전공쌍을 수집함으로 방사선 정보를 확인하는 선량계로써 많은 연구와 활용이 이루어지고 있다. 하지만, X선 에너지에 의하여 반도체 검출기에서 발생하는 전기적 신호량이 높지 않기 때문에 누설 전류의 저감이 필수적이다. 누설 전류를 저감시키기 위한 방안으로 반도체 층과 전극 층의 Schottky Contact 구조의 설계, Insulating Layer의 사용, 높은 비저항의 반도체 물질 연구 등이 이루어지고 있다. 하지만, 기존에 누설 전류 저감을 위하여 Insulating Layer를 전극층과 반도체 층 사이에 형성하는 연구에 있어서 Insulating Layer와 반도체 층의 계면 사이에서 발생하는 Charge Trapping으로 인하여 생성되는 신호의 Reproducibility 저하, 동영상 적용의 제한 등의 문제점을 겪어왔다. 이에 본 논문에서는 누설 전류를 저감시킴과 동시에 Charge Trapping의 최소화를 이루기 위하여 Insulating Layer의 두께 최적화 연구를 수행하였다. 본 연구에서 사용한 Insulating Layer는 검출기 표면에 입사하는 X선 정보 손실을 최소화 시키는 동시에 누설 전류와 Charge Trapping을 최소화 시키는 방법으로써 CVD방법으로 검출기 표면에 균일하게 Insulating Layer를 코팅하였다. Insulating 물질은 Parylene을 사용하였으며, 그 중 온도, 습도 등 외부환경에 영향을 적게 받는 type C를 사용하였다. 증착에 사용한 장비의 진공도는 Torr로 설정하여 증착되는 Parylene의 두께가 약 $0.3{\mu}m$가 되게 하였으며, 실험에는 반도체 물질 PbO를 사용하였다. Parylene의 절연 특성은 Dark Current와 Sensitivity를 측정한 SNR을 이용하여 Parylene코팅이 되지 않은 동일 반도체 검출기와의 신호를 비교하였으며 또한 Parylene를 다층 제작한 검출기의 수집 신호량을 비교하였다. 제작한 검출기의 X선 조사 시의 수집 전하량 측정 결과, 100 kVp, 100mA, 0.03s의 X선 조건에서 $1V/{\mu}m$의 기준 시, Parylene를 코팅하지 않은 PbO 검출기의 Dark current는 0.0501 nA/cm2, Sensitivity는 0.6422 nC/mR-cm2, SNR은 12.184이었으며, Parylene단층의 두께인 $0.3{\mu}m$로 증착된 시편의 Dark current는 0.04097 nA/cm2, Sensitivity는 0.53732 nC/mR-cm2으로 Dark current가 감소되고 sensitivity도 감소하였지만 SNR은 13.1150으로 높아진 것을 확인할 수 있었다. Perylene이 $0.6{\mu}m$로 증착된 시편의 경우, Dark Current는 0.04064 nA/cm2, Sensitivity는 0.31473 nC/mR-cm2, SNR은 7.7443으로써 Insulating Layer가 없는 시편보다 SNR이 약 40% 낮아진 것을 확인할 수 있었다. Parylene이 $0.9{\mu}m$로 증착된 시편의 경우 Dark current는 0.0378 nA/cm2, Sensitivity 0.0461 nC/mR-cm2로 Insulating Layer가 없는 시편에 비해 SNR은 약 1/12배 감소한 1.2196이었고, Parylene이 $1.2{\mu}m$로 증착된 시편의 SNR은 1.1252로서 더 감소하였다. 따라서 Parylene을 다층 코팅한 검출기일수록 절연 효과의 영향이 커짐으로써 SNR 비교 시 수집되는 신호량이 줄어드는 것을 확인하였다. 반도체 검출기의 누설 전류를 저감시킴과 동시에 신호 수집율에 영향을 최소화시키기 위하여 Insulating Layer의 두께를 적절하게 설정하여 적용하면 Insulating Layer가 없는 검출기에 비해 누설전류를 최소한으로 줄일 수 있고 신호 검출효율이 감소하는 것을 방지할 수 있을 것이라 사료된다.

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The Analysis of Heat Transfer through the Multi-layered Wall of the Insulating Package

  • Choi, Seung-Jin
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.12 no.1
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    • pp.45-53
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    • 2006
  • Thermal insulation is used in a variety of applications to protect temperature sensitive products from thermal damage. Several factors affect the performance of insulation packages. Among these factors, the thermal resistance of the insulating wall is the most important factor to determine the performance of the insulating package. In many cases, insulating wall consists of multi-layered structure and the heat transfer through this structure is a very complex process. In this study, an one-dimensional mathematical model, which includes all of the heat transfer principles covering conduction, convection and radiation in multi-layered structure, were developed. Based on this model, several heat transfer phenomena occurred in the air space between the layer of the insulating wall were investigated. From the simulation results, it was observed that the heat transfer through the air space between the layer were dominated by conduction and radiation and the low emissivity of the surface of each solid layer of the wall can dramatically increase the thermal resistance of the wall. For practical use, an equation was derived for the calculation of the thermal resistance of a multi-layered wall.

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Thermal Insulation Property due to Internal Air-layer Content of Warm Multi Layer Materials by using Numerical Analysis (수치해석을 이용한 다겹보온자재의 내부공기층 함유에 따른 보온 특성)

  • Chung, Sung-Won
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.4
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    • pp.97-103
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    • 2012
  • This study investigates thermal insulation properties of multi layer materials depending on thickness of air layers. Numerical analysis on the heat flow of different insulating materials was conducted to identify whether their temperature distributions demonstrate the reduced rate of heat transfer conclusively or not. Analytical model is divided into two categories. One is to distinguish temperature distribution of the air-layer materials from the non-air layer ones. The other is to compare the efficacy between eight-layered insulating materials with no air-layer contained and three-layered insulating materials which include an air-layer definitely. In the latter case, the identical thickness is assigned to each material. The effect of thermal insulation by including an air-layer is verified in the first analytical model. The result of the second model shows that the insulation of the eight-layered materials is coterminous at the three-layered ones with an air-layer and the thermal insulation of the two materials is imperceptible. The benefits of cost and energy saving are anticipated if air-layers are efficiently incorporated in multi layer insulating materials in a greenhouse.

In-Process Measurement of ELID Grinding Status -Thickness of Insulating layer-

  • Ahn, Jung-Hwan;Kim, Hwa-Young;Seo, Young-Ho;Paik, In-Hwan
    • Journal of Mechanical Science and Technology
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    • v.15 no.9
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    • pp.1268-1273
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    • 2001
  • To successfully establish the ELID-grinding, it is important to properly select the electrolytic condition according to grinding conditions. Currently, the selection of electrolytic condition is mainly dependent on the operators experience, which is one of difficulties preventing the successful application of ELID technique. In this study, an in-process measurement system of the insulating layer using two gap sensors-a capacitance type and an eddy current type-are developed and the change of the thickness of insulating layer during ELID grinding is detected. Evaluation experiments show the possibility to control the electrolytic condition through the in-process measurement of the layer status.

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P=Comparative Analysis of Thermal Performance According to Combines of Multi-layer Insulating Curtain (다겹보온커튼의 조합에 따른 열성능의 비교 분석)

  • Jin, B.O.;Kim, H.K.;Ryou, Y.S.;Lee, T.S.;Kim, Y.H.;Oh, S.S.;Moon, J.P.;Kang, G.C.
    • Journal of the Korean Society of Mechanical Technology
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    • v.20 no.6
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    • pp.763-769
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    • 2018
  • In this research, in order to improve the heat retention of greenhouse, comparative analysis of the heat flux of the marketed multi-later insulating curtain was carried out. Experiments is conducted by fabricating a test apparatus for investigating the heat flux characteristics. The multi-later insulating curtain used for the experiment was compared using the P, N, S, U and T company, which are commercially available, and the heat flux due to temperature difference between the experimental apparatus and the outside was compared and analyzed. When the internal temperature of the experimental result is the maximum temperature $60^{\circ}C$, the heat flux of multi-later insulating curtain is T Co.($73.1W/m^2$) > S Co.($119.5W/m^2$) > U Co.($155W/m^2$) > N Co.($163.1W/m^2$) > P Co.($177.7W/m^2$). The heat flux means the quantity of heat passing through the unit time per unit area, and the higher the numerical value, the higher the quantity of heat passing through the multi-layer insulating curtain. This can be determined that high heat fluxes produce low heat resistance. Further, it has been found that the weight of the insulating curtain is largely unrelated to the heat insulating property, and the heat insulating curtain having a thickness containing a high internal air layer is excellent in the heat insulating property. In the future when manufacturing a heat insulating curtain, It is judged that it is desirable to manufacture a combination of heat insulating materials that contain a high internal air layer content and that can maintain the air layer even for long-term use while minimizing the volume.

A study on the characteristics of double insulating layer (HgCdTe MIS의 이중 절연막 특성에 관한 연구)

  • 정진원
    • Electrical & Electronic Materials
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    • v.9 no.5
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    • pp.463-469
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    • 1996
  • The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

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Solution-Processed Quantum Dot Light-Emitting Diodes with TiO2 Nanoparticles as an Electron Transport Layer and a PMMA Insulating Layer (TiO2를 전자수송층으로 적용하고 PMMA 절연층을 삽입한 용액공정 기반 양자점 전계 발광 소자의 활용)

  • Kim, Bomi;Kim, Jungho;Kim, Jiwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.93-97
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    • 2022
  • We report highly efficient quantum dot light-emitting diodes (QLEDs) with TiO2 nanoparticles (NPs) as an alternative electron transport layer (ETL) and poly (methyl methacrylate) (PMMA) as an insulating layer. TiO2 NPs were applied as ETLs of inverted structured QLEDs and the effect of the addition of PMMA between ETL and emission layer (EML) on device characteristics was studied in detail. A thin PMMA layer supported to make the charge balance in the EML of QLEDs due to its insulating property, which limits electron injection effectively. Green QLEDs with a PMMA layer produced the maximum luminance of 112,488 cd/m2 and a current efficiency of 25.92 cd/A. We expect the extended application of TiO2 NPs as the electron transport layer in inverted structured QLEDs device in the near future.