• 전기학회논문지
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• 제62권12호
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• pp.1719-1724
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• 2013

In this paper, a size-reduction technique is presented for the RFID reader antenna working at two UHF bands. To tackle the problem of size increase in multi-band applications, two resonance paths are made to occur in one geometry with a single feed. While one resonance path is combined with the other, the entire geometry is determined to guarantee the resonance at the target frequencies through the dual-band input impedance matching. The antenna performance is predicted by the full-wave simulation, and the design method is verified by observing the good agreement between the simulated and measured results. At the two frequencies, the satisfactory return loss as well as the antenna efficiency and peak gain of the far-field pattern is obtained.

• Journal of electromagnetic engineering and science
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• 제4권1호
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• pp.43-49
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• 2004

A low-frequency coaxial reflectometer(LCR) with a thin-wire inner conductor is designed and constructed to measure nondestructively the absorbing performance of electromagnetic absorbers in the frequency range of 10 MHz to 200 MHz. The LCR consists of a square coaxial transmission line and a network analyzer with a time-domain measurement capability. Inherent characteristics of a square coaxial line with a thin-wire inner conductor which deteriorate the impedance matching of the input port of the LCR are addressed. And the characteristics are improved by employing a multiwire inner conductor. Measured and calculated reflection losses of a flat ferrite tile absorber are presented.

• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.342-345
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• 2014

An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.

• Journal of electromagnetic engineering and science
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• 제17권1호
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• pp.29-33
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• 2017

This paper proposes a half-mode substrate integrated waveguide (HMSIW) amplifier using lumped-element transition. The input and output impedances of this amplifier are matched by the lumped-element transition structure. This structure provides compact impedance and mode matching circuits between the HMSIW and a stand-alone amplifier. Surface mount technology inductors and capacitors are implemented to realize the lumped-element transition. A prototype of the proposed HMSIW amplifier shows 15 dB gain with 3 dB bandwidth of 4 to 7.05 GHz in a simulation and measurement.

• Journal of Electrical Engineering and Technology
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• 제8권2호
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• pp.371-375
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• 2013

The design of a new compact UWB bandpass filter is proposed, which has cascaded center-tapped microstrip composite right/left-handed transmission-line zeroth-order resonators (CRLH-TL ZORs). In an attempt to reduce the size, instead of the conventional half-wavelength resonators or periodic and multiple CRLH-TL cells, only one cell ZOR geometry is adopted as each resonator in the filter. Additionally, two center-tapped ZORs are coupled to increase the slope of the skirt. Besides, stepped impedance matching parts are placed in the paths to the input and output ports to enhance passband and stopband performances. The proposed filter is shown to have the overall size of $0.69{\lambda}_g{\times}0.70{\lambda}_g$, the insertion loss much less than 1 dB, and an acceptable return loss performance in the predicted and measured results.

• ETRI Journal
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• 제29권5호
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• pp.670-672
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• 2007

An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-${\mu}m$ CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.

• 전자공학회논문지A
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• 제30A권3호
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• pp.34-42
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• 1993

An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

• 산업기술연구
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• 제30권A호
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• pp.69-73
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• 2010

In this paper, we designed the RF-DC converter used in wireless power transmission system and studied how to design the RF-DC converter of high conversion efficiency. The RF-DC converter operate at 2.45GHz and the diode is connected with series. The RF-DC converter uses shorted stub for DC loop and matching. We can divide the RF-DC converter circuit into four blocks. The reflection coefficients between the blocks were optimized for the maximum conversion efficiency at 0 dBm input power and $1300{\Omega}$ load impedance. The final design of the RF-DC converter has a 52 percent conversion efficiency.

• 전기학회논문지
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• 제57권4호
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• pp.653-659
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• 2008

This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.

• 대한전자공학회논문지SD
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• 제44권12호
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• pp.77-84
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• 2007

본 논문에서는 $0.18{\mu}m$ CMOS 공정을 이용하여 서브샘플링 직접변환방식 RF 수신기용을 위한 광대역 저잡음 증폭기를 구현하였다. 인버터-형태의 트랜스임피던스 입력단과 3차의 Chebyshev 매칭네트워크를 사용함으로써, 제안한 광대역 저잡음 증폭기 회로는 5.35GHz의 대역폭, $12\sim18dB$의 전력이득, $6.9\sim10.8dB$의 NF, 대역폭 내에서의 -10dB 이하의 입력 임피던스 매칭과 -24dB 이하의 출력 임피던스 매칭을 얻었다. 제작한 칩은 1.8V 단일 전원전압으로 부터 32.4mW의 전력소모를 가지며, $0.56\times1.0mm^2$의 칩 사이즈를 갖는다.