• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.405-410
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• 2012

This paper presents an inductorless 8-Gb/s adaptive passive equalizer with low-power consumption and small chip area. The equalizer has a tunable RC filter which provides high-frequency gain boosting and a limiting amplifier that restores the signal level from the filter output. It also includes a feedback loop which automatically adjusts the filter gain for the optimal frequency response. The equalizer fabricated in $0.18-{\mu}m$ CMOS technology can successfully equalize 8-Gb/s data transmitted through up to 50-cm FR4 PCB channels. It consumes 6.75 mW from 1.8-V supply voltage and occupies $0.021mm^2$ of chip area.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권4호
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• pp.277-282
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• 2008

A fully integrated inductorless CMOS impulse radio ultra-wideband (IR-UWB) receiver is implemented using $0.18\;{\mu}m$ CMOS technology for 3-5 GHz application. The UWB receiver adopts the non-coherent architecture, which removes the complexity of RF architecture and reduces power consumption. The receiver consists of inductorless differential three stage LNA, envelope detector, variable gain amplifier (VGA), and comparator. The measured sensitivity is -70 dBm in the condition of 5 Mbps and BER of $10^{-3}$. The receiver chip size is only $1.8\;mm\;{\times}\;0.9\;mm$. The consumed current is 15 mA with 1.8 V supply.

• 전자공학회지
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• 제35권7호
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• pp.85-94
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• 2008

• IEIE Transactions on Smart Processing and Computing
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• 제5권3호
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• pp.207-214
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• 2016

Optical communication systems are rapidly spread following increases in data traffic. In this work, a 32-Gb/s inductorless output buffer circuit with adjustable pre-emphasis is proposed. The proposed circuit consists of an output buffer circuit and an emphasis circuit. The emphasis circuit emphasizes the high frequency components and adds the characteristics of the output buffer circuit. We proposed a design method using a small-signal equivalent-circuit model and designed the compensation characteristics with a 65-nm CMOS process in detail using HSPICE simulation. We also realized adjustable emphasis characteristics by controlling the voltage. To confirm the advantages of the proposed circuit and the design method, we fabricated an output buffer IC with adjustable pre-emphasis. We measured the jitter and eye height with a 32-Gb/s input using the IC. Measurement results of double-emphasis showed that the jitter was 14% lower, and the eye height was 59% larger than single-emphasis, indicating that our proposed configuration can be applied to the design of an output buffer circuit for higher operation speed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.86-89
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• 2002

A new design approach for realising low-power low-voltage high-Q high-order RE bandpass filter is proposed. Based on the gyrator-C inductor topology, a 2$\^$nd/-order biquadratic bandpass filter can be realised by adding a series capacitor to the input port of the gyrator. High-Q 2$\^$nd/-order and 4$\^$th/-order fully differential RF bandpass filters operating in the 2.4-㎓ ISM (Industrial, scientific and medical) frequency band under a 2-V single power supply voltage with low power dissipation are reported.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.176- 184
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• 2010

A low-power inductorless 1:4 DEMUX and a 4:1 MUX for a 90 nm CMOS are presented. The DEMUX can be operated at a speed of 25 Gb/s with the power supply voltage of 1.05 V, and the power consumption is 8.9 mW. The area of the DEMUX core is $29\;{\times}\;40\;{\mu}m^2$. The operation speed of the 4:1 MUX is 13 Gb/s at a power supply voltage of 1.2 V, and the power consumption is 4 mW. The area of the MUX core is $30\;{\times}\;18\;{\mu}m^2$. The MUX/DEMUX mainly consists of differential pseudo-NMOS. In these MUX/DEMUX circuits, logic swing is nearly rail-to-rail, and a low $V_{dd}$. The component circuit is more scalable than a CML circuit, which is commonly used in a high-performance MUX/DEMUX. These MUX/DEMUX circuits are compatible with conventional CMOS logic circuit, and it can be directly connected to CMOS logic gates without logic level conversion. Furthermore, the circuits are useful for core-to-core interconnection in the system LSI or chip-to-chip communication within a multi-chip module, because of its low power, small footprint, and reasonable operation speed.

• 한국산학기술학회논문지
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• 제11권12호
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• pp.4984-4990
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• 2010

기존의 DC-DC Converter에서는 전압 변화 및 에너지 축적소자로서 자성부품인 인덕터를 사용하여 자속 발생에 의한 전력 손실로 효율이 낮아지고, 자성부품의 부피가 크고 무거우며 가격이 비싸 반도체 칩으로 집적화하기에 문제점을 가지고 있다. 이러한 문제점을 개선하기 위해 본 논문에서는 인덕터없는 스위치드 커패시터 방식을 이용한 저전력 강압형 CMOS DC-DC Converter를 제안한다. 제안된 DC-DC Converter는 0.5um 공정을 이용하여 설계하였으며, 설계된 DC-DC 컨버터는 200kHz의 주파수로 동작하며 96%이상의 전력효율을 cadence 시뮬레이션을 통하여 얻을 수 있다.

• 전기전자학회논문지
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• 제23권3호
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.