• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2000.02a
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• pp.185-188
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• 2000

The voltage induced in the superconducting background magnet system is analyzed according to the calculation of self inductance and mutual inductance. The voltage induced by blip and compensation coils of the background magnet system is about 6.4V. In order to charge the main background magnet, the power supply must provide the minimum voltage of 1.1 kV. the compensation coils have an influence on the field distribution. The compensation coils result in the decreasing center field about 2.67%. It can remarkably decrease the ac losses and the voltage on the current leads of the background magnet.

• Rapid Communication in Photoscience
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• v.4 no.3
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• pp.73-75
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• 2015

Cr(VI) reduction was successfully achieved in the presence of cationic micelles (CMs) under visible light illumination. Micelle formation of cationic surfactants seems to be critical in Cr(VI) reduction. Cr(VI) was reduced very fast above the critical micelle concentration (cmc) of CTAB solutions, but was not reduced at all either below or around the cmc of CTAB. The reduction rate of Cr(VI) was enhanced in the absence of dissolved oxygen, supporting that the removal of Cr(VI) should be achieved via a reductive pathway. When CTAB was substituted by Brij 35 or SDS, the reduction of Cr(VI) was negligible. This indicates that the electrostatic interaction between Cr(VI) and headgroups of surfactants is important in the visible light-induced Cr(VI) reduction in micellar solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.113-116
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• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.213-217
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• 1997

In this paper, the imparct of X-ray and plasma process-induced-damages to La doped Lead Zirconate Titanate (PLZT, (Pb1-xLa)(Zr0.5Ti0.5)O3) capacitor characteristics have been investigated from the viewpoint of gigabit scale dynamic random access memory (DRAM) applications. Plamsa damage causes asymmetric degradation on hysteresis characteristics of PLZT films. On the other hand, X-ray damage results in a symmetrical reduction of charge storage densities (Qc's) for both polarities. As La concentration increases in the films, the radiation hardness of PLZT films on X-ray and plasma exposures is improved. It is observed that the damaged devices are fully recovered by thermal annealing under oxygen ambient.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05a
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• pp.321-328
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• 1998

A controller and sensor fault tolerant system jot a steam generator is designed with fuzzy logic. A structure of the : proposed fault tolerant redundant system is composed of a supervisor and two fuzzy weighting modulators. A supervisor alternatively checks a controlled and a sensor induced performances to identify Which Part, a controller or a sensor, is faulty. In order to analyze controller induced performance both an error and a charge in error of the system output an chosen as fuzzy variables. The fuzzy logic jot a sensor induced performance uses two variables : a deviation between two sensor outputs and its frequency, Fuzzy weighting modulator generates an output signal compensated for faulty input signal. Simulations show that the : proposed fault tolerant control scheme jot a steam generator regulates welt water level by suppressing fault effect of either controllers or sensors. Therefore through duplicating sensors and controllers with the proposed fault tolerant scheme, both a reliability of a steam generator control and sensor system and that of a power plant increase even mote.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.341-345
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• 2000

This paper analysed the induced electric field of human body under the 765 kV transmission line considering permittivity and conductivity. As permittivity of human body is very high as 106 at 60 Hz, special numerical computation technique is Surface Charge Method(SCM) for composite media with extremely different properties is applied to reduce calculation error of induced electric field inside the human body.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.338-344
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• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.293-298
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• 2006

Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.5
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• pp.577-584
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• 2014

In this study, the behavior of a shaped charge projectile's metal jet was analyzed using flash radiography. The projectile was installed horizontally to observe the behavior of jet for enough time. While the X-ray tube heads are fixed at one point, the behavior range of the jet is wide in this experimental set up, therefore the angle between the X-ray tube heads and the jet tip is changed continuously as jet moves forward. Jet particle's locations calculated from the X-ray films become different from their real positions under this situation because of the film to object distance(FTOD) and correction for error by FTOD is required. In this study, a method was devised to correct the error by FTOD and this was applied for the investigation of jet behavior of a 70 mm caliber's shaped charge.