• ETRI Journal
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• v.28 no.2
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• pp.253-256
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• 2006

We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a $0.75\;{\mu}m$ thick $Si_{0.8}Ge_{0.2}$ buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8%, respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.372-377
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• 2003

To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Journal of the Korean Wood Science and Technology
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• v.47 no.2
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• pp.145-162
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• 2019

This study aimed to increase the sugar and ethanol yield from the mengkuang plant biomass through biological and liquid hot water (LHW) pretreatment and their combination. The results showed that biological pretreatments with 5% inoculum of the fungus Trametes versicolor resulted in the highest alpha cellulose content incubated for 30 days, and 10% inoculum resulted in the lowest lignin content. LHW pretreatment decreased the hemicellulose content of pulps from 10.17% to 9.99%. T. versicolor altered the structure of the mengkuang pulp by degrading the lignin and lignocellulose matrix. The resulting delignification and cellulose degradation facilitate the hydrolysis of cellulose into sugars. The alpha cellulose content after biological-LHW pretreatment was higher (78.99%) compared to LHW-biological pretreatment (76.85%). Scanning electron microscopy analysis showed that biological-LHW combinated treatment degrades the cell wall structures. The ethanol yield for biological-LHW pretreated sample was observed 43.86% (13.11 g/L ethanol by weight of the substrate, which is much higher than that of LHW-biological pretreatment (34.02%; 9.097 g/L). The highest reducing sugar content about 45.10% was observed with a resulting ethanol content of 15.5 g/L at LHW pretreatment temperature of $180^{\circ}C$ for 30 min.

• Electronics and Telecommunications Trends
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• v.5 no.1
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• pp.55-70
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• 1990

SIMOX SOI is known to be one of the most useful technologies for fabrications of new generation ULSI devices. This paper describes the current status of SIMOX SOI technology for ULSI applications. The SIMOX wafer is vertically composed of buried oxide layer and silicon epitaxial layer on top of the silicon substrate. The buried oxide layer is used for the vertical isolation of devices The oxide layer is formed by high energy ion implantation of high dose oxygen into the silicon wafer, followed by high temperature annealing. SIMOX-based CMOS fabrication is transparent to the conventional IC processing steps without well formation. Furthermore, thin film CMOX/SIMOX can overcome the technological limitations which encountered in submicron bulk-based CMOS devices, i.e., soft-error rate, subthreshold slope, threshold voltage roll-off, and hot electron degradation can be improved. SIMOX-based bipolar devices are expected to have high density which comparable to the CMOX circuits. Radiation hardness properties of SIMOX SOI extend its application fields to space and military devices, since military ICs should be operational in radiation-hardened and harsh environments. The cost of SIMOX wafer preparation is high at present, but it is expected to reduce as volume increases. Recent studies about SIMOX SOI technology have demonstrated that the performance of the SIMOX-based submicron devices is superior to the circuits using the bulk silicon.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.12
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• pp.99-106
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• 2010

Gas turbines operation for power generation increased rapidly since 1990 due to the high efficiency in combined cycle, relatively low construction cost and low emission. But the operation and maintenance cost for gas turbine is high because the expensive superalloy hot gas path parts should be repaired and replaced periodically This study analyzed the initiation and propagation of the crack at the gas turbine blades which are coated with MCrAIY as a bond coat and TBC as a top coat. The sample blades had been serviced at the actual gas turbines for power generation. Total 7 sets of blades were analyzed and they have different EOH(equivalent operation hour). Blades were sectioned and the cracking distribution were measured and analyzed utilizing SEM(scanning electron microscope) and optical microscope. The blades which had 52,000 EOH of operation had cracks at the substrate and the maximum depth was 0.2 mm. Most of the cracks initiated at the boundary layer between TBC and bond coat and propagated down to the bond coat. Once bond coat is cracked, the base metal is exposed to the oxidation condition and undergoes notch effect. Under this environment, the crack branched at the inter-diffusion layer and propagated to the substrate. Critical cracks affecting the blade life were analyzed as those on suction side and platform.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.2
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• pp.297-305
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• 2000

It is observed that the initial properties and degradation characteristics on plasma of n/p-MOSFET with polycide and poly-Si as different gate materials under F-N stress and hot electron stress are affected by metal AR(Antenna Ratio) during plasma process. Compared to that of MOS devices with poly-Si gate material, reliability properties on plasma of MOS devices with polycide gate material are improved. This can be explained by that fluorine of tungsten polycide process diffuses through poly-Si into gate oxide and results in additional oxide thickness. The fact that MOS devices with polycide gate material can reduce damages of plasma process shows possibility that polycide gate material can be used as gate material for next generation MOS devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.188-198
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• 1993

We have developed a technique for growing thin oxides (6~10 nm) by the Last step TCA method. N-channel metal-oxide-semiconductor (n-MOS) capacitor and n-channel metal-oxide-semiconductor field-effect transistor's (MOSFET's) having a gate oxide with chlorine incorporated $SiO_2/Si$ interface have been analyzed by electrical measurements and physical methods, such as secondary ion mass spectrometry (SIMS) and electron spectroscopy for chemical analysis (ESCA). The gate oxide grown with the Last strp TCA method has good characteristics as follows: the electron mobility of the MOSFET's with the Last step TCA method was increased by about 7% and the defect density at the $SiO_2/Si$ interface decreases slightly compared with that with No TCA method. In reliability estimation, the breakdown field was 18 MV/cm, 0.6 MV/cm higher than that of the gate oxide with No TCA method, and the lifetime estimated by TDDB measurement was longer than 20 years. The device lifetime estimated from hot-carrier reliability was proven to be enhanced. As the results, the gate oxide having a $SiO_2/Si$ interface incorporated with chlorine has good characteristics. Our new technique of Last step TCA method may be used to improve the endurance and retention of MOSFET's and to alleviate the degradation of thin oxides in short-channel MOS devices.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.54 no.3
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• pp.320-326
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• 2009

The crops showing hard seed character have high seed viability after seed storage for long period. The low germination rate due to hard seed coat, however, cause a problem of low seedling establishment in field condition. Three legumes used in the experiment, lablab bean (Dolichos lablab L.), asparagus bean (Vigna sesquipedalis L. Fruwirth), and soybean (Glycine max L. Merr.), showed low germination rate (26, 17, and 5%, respectively) due to thick and hard seed coat. In this study artificial treatment for breaking dormancy was tested in hard seeds. The effect of proper treatment was various depending on species. The germination rate of lablab bean was highly improved up to 94% by soaking into water for 24 hours. In the case of asparagus bean, the rate was increased up to 90% by soaking for eight hours near boiling water until it cools. The germination rate of small hard seed soybean was increase to 96% by soaking into concentrated sulfuric acid for 10 minutes. Ultrastructural change revealed by scanning electron microscope (SEM) reflects that the structure of micropyle was changed and water uptake was facilitated with all treatments tested in the experiment. Especially, sulfuric acid treatment resulted in the degradation of micropylar tissue. These results demonstrate that the artificial treatment including sulfuric acid and (hot) water soaking treatment for promoting water uptake can be applied to improve seed germination in legume seed with thick and hard seed coat.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.283-288
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• 2019

MCrAlY overaly coatings are used as oxidation barrier coatings to prevent degradation of the underlying substrate in high temperature and oxidizing environment of the hot section of gas turbines. Therefore, oxidation resistance in high temperature is important property of MCrAlY coatings. Also, coefficients of thermal expansion (CTE) of MCrAlY have middle value of that of Ni-based superalloys and oxides, which have the effect of preventing the delamination of the surface oxides. Cyclic oxidation test is one of the most useful methods for evaluating the high temperature durability of coatings used in gas turbines. In this study, NiCoCrAlY overlay coatings were formed on Inconel 792(IN 792) substrates by vacuum plasma spraying process. Vacuum plasma sprayed NiCoCrAlY coatings and IN 792 susbstrates were exposed to 1000℃ one-hour cyclic oxidation environment. NiCoCrAlY coatings showed lower weight gain in short-term oxidation. In long-term oxidation, IN 792 substrates showed higher weight loss due to delamination of surface oxide but NiCoCrAlY coatings showed lower weight loss. X-ray diffraction (XRD) analysis showed α-Al2O3 and NiCr₂O₄ was formed during the cyclic oxidation test. Through cross-section observation using scanning electron microscopy (SEM) and electron back scatter diffraction (EBSD) analysis, thermally grown oxide (TGO) layer composed of α-Al₂O₃ and NiCr₂O₄ was formed and the thickness of TGO increased during 1000℃ cyclic oxidation test. β phase in upper side of NiCoCrAlY coating was depleted due to oxidation of Al and outer beta depletion zone thickness also increased as the cyclic oxidation time increased.