• Title/Summary/Keyword: hole injection material

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Determination of Residual-Stress Distribution in Engineering Plastics (공업용 플라스틱 성형품에 대한 잔류응력의 측정)

  • Kim, Chae-Hwan;Youn, Jae-Ryoun
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.132-135
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    • 2006
  • Injection molding is a flexible production technique for the manufacturing of polymer products, but introduces residual stresses. Residual stresses in a structural material or component are those stresses which exist in the object without other external loads. The layer removal and hole drilling method are used for the measurement of residual stress in injection molded polystyrene part. The hole drilling method is potentially more flexible for determining residual stress in complex geometries and can be used as an adoptable technique for the measurement of residual stress in polymeric materials. Results obtained by experiments agree with each other.

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A Study on the properties of ELD of Mu1tistructure Using by Alq$_3$ (Alq$_3$를 이용한 다층 구조의 ELD 특성 연군)

  • 채수길;김태완;강도열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.116-119
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    • 1997
  • In this paper A double-layer organic electroluminescent(EL) device was fabricated using a TPD(N,N'-dipheny] -N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4.4'-diamine: aromatic diamine), as a hole-transport material and tris (8-hydroxy quinolinate) aluminum(Alq$_3$) as a an emiting material and its performance characteristics were investigated. structure of devices is ITO/TPD/Alq$_3$/Al. we have fabricated hole transport layer of two types. Doping material of Hole Transport material is Poly(methyl methacrylate)(PMMA) and PEI(Poly-Ether-Imide). Carrier injection from the electrodes to the doped PMMA and PEI layer through the dopants and concomitant electroluminescence from Alq$_3$were observed. Green emission with luminance of 40cd/m$^2$was achieved at a drive voltage of 30V

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A Study on the Injection Characters of The Back Side Grouting Method by a Model Test (모형실험을 통한 배면지수 그라우팅기법에 관한 연구)

  • Chun, Byung-Sik;Choi, Choon-Sik
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.6 no.2
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    • pp.175-182
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    • 2002
  • The cement injection technology on the purpose of ground reinforcement and cut-off has been used in construction sites until now. However, recently it is applied to prevent leakage of underground structure. In this study, applicability of the back side waterproof grouting method was verified through performing field model tests and reviewing case histories. From the results of this study, injection shape of the back side waterproof grouting method was appeared to be root type, and waterproof effect by injection of cement grout material was excellent because grout material infiltrated into boundary between wall of structure and back side ground to be waterproof layer. Components influencing infiltration of injection material are type of soil and degree of compaction. For effective injection, injection pressure has to vary gradually from high pressure to low pessure and small quantity of injection material has to be injected for long times. Also, spacing of injection hole must be designed considering condition of back side ground, injection area, W/C ratio, the number of injection and injection pattern properly.

Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems (전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성)

  • 조진욱;최장용;박창희;김재형;이형원;남상희;서대식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

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A Study on the Transference Mechanism of Charge carriers within the Devices (소자 내부에서 전하 운송체의 이동 메카니즘에 관한 연구)

  • Shim, Hye-Yeon;Kim, Jun-Ho;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.508-509
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    • 2005
  • In case of ITO/MEH-PPV/Al structure, the quantity of charge carriers flowing through the organic material was few and the density of them is fixed. The electric field inside of the device almost didn't change with the position. On the other hands, in case of Au/MEH-PPV/Au structure, the hole density increased rapidly nearby the anode but decreased nearby the cathode. The space charge phenomenon followed sufficient hole injection resulted in the change of the electric field with the position inside of the device. We verified that the result of the current-voltage simulation corresponded with experimental result.

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EL Properties of OLEDs with Different Crystal Structures of Hole Injection Layers of Copper(II)-phthalocyanine (정공 주입층 Copper(II)-phthalocyanine의 결정 변화에 따른 유기발광소자의 발광특성연구)

  • 임은주;이기진;한우미;이정윤;차덕준;이용산;김진태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.2
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    • pp.113-119
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    • 2003
  • We report the electrical properties of copper(II)-phthalocyanine(Cu-Pc) as a hole injaction layer in organic light-emitting diode (OLED). OLEDs were constructed by the following material structure : indium tin oxaide (ITO)/ CuPc/ triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/4-(Dicyanomethlene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/ Al. we observed that the change of recombination zone by using a DCM detection thin layer (6 ${\AA}$) in a Alq$_3$ emitting layer. layer. Recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of cupc layer increased.

An Efficiency Improvement of the OLEDs due to the Thickness Variation on Hole-Injection Materials (정공주입물질 두께 변화에 따른 유기발광다이오드의 효율 개선)

  • Shin, Jong-Yeol;Guo, Yi-Wei;Kim, Tae-Wan;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.5
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    • pp.344-349
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    • 2015
  • A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

Emission Characteristics of Poly(3-alkylthiophene) with TPD Addition (TPD 첨가에 따른 poly(3-alkylthiophene)의 발광특성)

  • 서부완;김주승;구할본;이경섭;박복기;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.308-311
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    • 2000
  • The organic electroluminescene (EL) device has gathered much interested because of its potential in materials and simple device fabrication. We fabricated EL device which have a mixed single emitting layer containing N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine [TPD] and poly(3-hexylthiophene) [P3HT]. The molar ratio between P3HT and TPD chaged with 1:1, 3:1, 5:1, 3:2 and 5:2. EL intensity of ITO/P3HT+TPD/Mg:In devices is enhanced by addition of TPD into P3HT. This can be explained that the energy transfer occurs from TPD to P3HT. Recombination probability increases in emitting layer because that TPD as hole transport material plays a role more injection hole and Mg:In (3.7eV) electrode has low work function make easily electron injection. ITO/P3HT+TPD(5:2)/Mg:In devices emit orange-red light at 28V.

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Fabrication and Characterization of Red Emitting OLEDs using the Alg3:Rubrene-GDI4234 Phosphor System (Alg3:Rubrene-GDI4234 형광 시스템을 이용한 적색 OLED의 제작과 특성 평가)

  • Jang Ji-Geun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.5
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    • pp.437-441
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    • 2006
  • The red emitting OLEDs using $Alq_3$:Rubrene-GDI4234 phosphors have been fabricated and characterized . In the device fabrication, 2- TNATA [4,4',4' - tris (2- naphthylphenyl - phenylamino ) - tripheny lamine] as the hole injection material and NPB [N,N'-bis (1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as the hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum evaporation. And then, red color emissive layer was deposited using $Alq_3$ as the host material and Rubrene(5,6,11,12-tetraphenylnaphthacene)-GDI4234 as the dopants. finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:Rubrene-GDI4234/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Red OLEDs fabricated in our experiments showed the color coordinate of CIE(0.65, 0.35) and the maximum power efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

Efficient Top-Emitting Organic Light Emitting Diode with Surface Modified Silver Anode

  • Kim, Sung-Jun;Hong, Ki-Hyon;Kim, Ki-Soo;Lee, Ill-Hwan;Lee, Jong-Lam
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.7
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    • pp.550-553
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    • 2010
  • The enhancement of quantum efficiency using a surface modified Ag anode in top-emitting organic light emitting diodes (TEOLEDs) is reported. The operation voltage at the current density of $1\;mA/cm^2$ of TEOLEDs decreased from 9.3 V to 4.3 V as the surface of anode coated with $CuO_x$ layer. The work function of these structures were quantitatively determined using synchrotron radiation photoemission spectroscopy. Secondary electron emission spectra revealed that the work function of the Ag/$CuO_x$ structure is higher by 0.6 eV than that of Ag. Thus, the $CuO_x$ structure acts as a role in reducing the hole injection barrier by about 0.6 eV, resulting in a decrease of the turn-on voltage of top-emitting light emitting diodes.