• Transactions on Electrical and Electronic Materials
• /
• v.6 no.5
• /
• pp.233-237
• /
• 2005

In the device structure of ITO/hole injection layer/N, N'-biphenyl-N, N'-bis-(1-naphenyl)-[1,1'-biphenyl]4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum$(Alq_3)/Al$, we investigated an effect of hole-injection materials (PTFE, PVK) on the electrical characteristics and efficiency of organic light-emitting diodes. A thermal evaporation was performed to make a thickness of NPB layer with a evaporation rate of $0.5\~1.0\;\AA/s$ in a base pressure of $5\times10^{-6}$ Torr. We measured current-voltage characteristics and efficiency with a thickness variation of hole-injection layer. The PTFE and PVK hole-injection layer improve a performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage and energy band adjustment. Compared with the devices without a hole-injection layer, we have obtained that an optimal thickness of NPB was 20 nm in the device structure of $ITO/NPB/Alq_3/Al$. And using the PTFE or PVK hole-injection layer, the external quantum efficiencies of the devices were improved by $24.5\%\;and\;51.3\%$, respectively.

• Journal of ILASS-Korea
• /
• v.10 no.1
• /
• pp.24-34
• /
• 2005

Injection technology is one of the important technologies in a diesel engine. Many studies have done on the injection system. In this study, the fuel chamber geometry, the orifice ratio and the needle lift of the injection valve for a marine diesel engine are varied, and simulated. The result shows that the nozzle hole size has influence on the rail pressure and injection duration sensitively. The decrease of the static pressure at the nozzle hole entrance and the increase of the dynamic pressure on the outlet surface are occurred with the increase of the nozzle hole diameter. The highest dynamic pressure of the outlet was occurred at the needle lift of 0.4mm and the nozzle hole diameter of 0.328mm in this test nozzle.

• Journal of ILASS-Korea
• /
• v.20 no.1
• /
• pp.43-52
• /
• 2015

Experimental study was conducted to investigate the effects of ultra-high injection pressure and nozzle hole diameter on diesel flow and spray characteristics. Electronically controlled ultra-high pressure fuel injection system was made to supply the fuel of ultra-high pressure consistently. Three injection pressures, 80, 160, and 250MPa were applied. Four type of injectors with identical eight nozzle holes were used. The four injectors have nozzle hole diameters of 115, 105, 95, and $85{\mu}m$ respectively. Injection quantity and rate were measured to investigate flow characteristics according to injection pressures and nozzle hole diameters. Mie-scattering and shadowgraph were performed to visualize liquid and vapor phases of diesel spray in a constant volume combustion chamber (CVCC). Ambient conditions of high pressure and high temperature in a diesel engine were simulated by using CVCC.

• Journal of ILASS-Korea
• /
• v.18 no.1
• /
• pp.55-60
• /
• 2013

In this study, injection flow rates and material of the solenoid sealing of the injectors were improved for the development of a di-methyl Ether(DME) common-rail system. To deliver the same amount of energy provided by injection pressure of diesel $P_{inj}$ = 160 MPa, the DME injectors need to have larger diameter of nozzle hole and more No. of hole at low injection pressure of $P_{inj}$ = 40~50 MPa. The simplified nozzle flow model, which takes account of nozzle geometry and injection condition, was employed in order to design the concept of a injector nozzle such as No. of hole, diameter of hole and diameter of needle seat, etc. Injection amount and rate were tested by diesel and DME test stand. As a result, the diameter of nozzle hole were enlarged by 0.25 mm. The diameter of the orifice in the high pressure line was increased by 1.0 mm to maintain hydraulic force in the nozzle. The material of the solenoid sealing was changed to HNBR, which was strong against the corrosive. Experimental results showed that the injection amount of the DME injector drastically increased by 191.9% comparison to that of diesel at $P_{inj}$ = 40 MPa.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.90-90
• /
• 2012

The electron/hole injections in organic electronic devices have long been an issue due to the large energy level mismatches between electrode and organic layer. To utilize the organic materials in electronic devices, functional thin layers have been used, which reduce the electron/hole injection barrier from electrode to organic material. Typically, inorganic compounds and organic molecules are used as an electron and hole injection layer, respectively. Recently, CsN3 and 1,4,5,8,- naphthalene-tetracarboxylic-dianhydride (NTCDA) are reported as a potential electron and hole injection layers. CsN3 shows unique properties that it breaks into Cs and N and thus Cs can dope organic layer into n-type. On the other side, hole injection anode, NTCDA forms gap states with anode material. In this presentation, we show the electronic structure changes upon the insertion of CsN3 and NTCDA at proper interfaces to reduce the charge injection barriers. These barrier reductions are correlated with device characteristics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.380-380
• /
• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Journal of ILASS-Korea
• /
• v.7 no.1
• /
• pp.36-42
• /
• 2002

The objective of this investigation was to obtain an excellent spray at the low injection pressure. When cavitation occurred in the nozzle hole the atomization of the liquid jet enhanced considerably. In this experiments, a acrylic nozzle which was installed the gap and installed the bypass in the nozzle hole was used to enhance the atomization of the liquid jet at the few injection pressure. The liquid flow in the nozzle hole was photographed by a transmitted light using a micro flash. The spray angle was measured by macroscope images of PMAS and the Sauter mean diameter was measured by PDA system. The pressure of the notate hole was measured by pressure transducer. It was found that enhanced atomization of the liquid jet at the low injection pressure was obtained by installing the gap and the bypass at the single hole nozzle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.12
• /
• pp.899-903
• /
• 2013

We investigated the luminescence properties of $Alq_3$ in the device structure of ITO/CuPc/TPD/$Alq_3$/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.766-769
• /
• 2002

We have seen the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine(CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)(PEDOT:PSS) in a device structure of ITO/buffer/TPD/$Alq_3$/Al. Polymer PVK and PEDOT:PSS buffer layer was made using spin casting method and the CuPc layer was made using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature with a thickness variation of buffer layer. We have obtained an improvement of the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer are used, respectively. The enhancement of the efficiency is attributed to the improved balance of holes and elelctrons due to the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer functions as a hole-injection supporter and the PVK layer as a hole-blocking one.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.7
• /
• pp.21-29
• /
• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology