• Journal of the Mineralogical Society of Korea
• /
• v.12 no.2
• /
• pp.66-76
• /
• 1999

Intergrowth texture of biotite and chlorite crystals within an amphibolitic schist of the northwestern Okchon metamorphic belt was investigated using back-scattered electron (BSE) imaging and high-resolution transmission electron microscopy (HRTEM). BSE images show that thin chlorite and biotite packets are mixed along (001) plane to result in intergrowth texture. In addition, rutile particles of submicron size occur exclusively at the boundaries between biotite and chlorite stacks. HRTEM investigation and remnant biotite layers are closely associated with such boundaries, suggestinga possibility that chlorite layers were formed from biotite during retrograde metamorphic reaction. Such intepretation of the origin of intergrowth texture can be further supported biotite is approximately 2 w%, and that of chlorite usually lower than 0.2 wt%. Ti was apparently leached out during the alteratin of biotite to precipitate rutile particles at the such rutile particles could be an important indicator showing that the intergrowth texture of chlorite and biotite is originated by a retrograde metamorphism rather than by incomplete chlorite-to-biotite reaction during prograde metamorphism. Biotite crystals contain intercalated chlorite layers will result in somewhat high Mg and Al, and the use of such inhomogeneous biotite will result in impreciese geothermobarometric calculations.

• Journal of the Korean Ceramic Society
• /
• v.36 no.7
• /
• pp.762-766
• /
• 1999

The crystal structure of A2+(Mg1/3Nb2/3)O3,(A2+=Sr2+ and Ca2+)ceramics was studied usig X-ray diffraction (XRD) and high resolution transmission electrion microscopy(HRTEM). Ba(Mg1/3Nb2/3)O3 (SMN) has the 1:2 ordered monoclinic structure which has the anti-phase tilt of octahedra. The type of tilting in SMN was considered to be a$^{\circ}$a$^{\circ}$c- or a­a­c$^{\circ}$ Ca(Mg1/3Nb2/3)O3 (CMN) also has the 1:2 ordered monoclinic structure which was distorted by the anti-phase tilt or in-phsae tilt of octahedra. A unit cell containing both the in-phase tilt axis and anti-phase tilt axis was not observed in the CMN. Therefore CMN has the mixed phase consisting of the 1:2 ordered monoclinic phase with anti-phase tilt of octahedra and the one with in -phase tilt of ocatahedra,. The anti-parallel shift of cation was also observed in the CMN.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.535-536
• /
• 2013

본 연구에서는 DC/RF co-sputtering공법을 통해 제작한 In-Mo-O 투명 Mo doping 농도 및 열처리 온도에 따른 전기적, 광학적, 구조적 특성을 분석하고, 최적화된 In-Mo-O 투명전극을 유기태양전지(OPVs)와 유기발광다이오드(OLED)에 적용하여 그 가능성을 평가하였다. Mo doping 농도는 co-sputtering 공정 중 MoO3에 인가되는 radio-frequency (RF) power를 변화시켜 조절되었으며, 투명전극의 광학적 특성 및 전기적 특성 향상을 위해 성막 공정 후 급속 열처리 공정을 온도 별로 진행하였다. In-Mo-O 투명 전극은 Mo 도핑 농도에 영향을 받음을 확인할 수 있었고, 최적화된 Mo doping 파워에서 성막한 In-Mo-O 박막은 급속 열처리 공정 후 면저항 24.57 Ohm/square, 투과도 81.57% (400~1,200 nm wavelength)를 나타내었다. Bulk hetero-junction 기반의 고효율 유기태양전지와 유기발광다이오드 적용하기 위해 본 연구에서 제작된 IMO 투명전극의 구조적 특성, 결정성 및 표면특성은 x-ray diffraction (XRD), atomic force microscopy(AFM), field effect scanning electron microscopy (FE-SEM), High-resolution transmission electron microscopy (HRTEM) 분석을 통해 진행하였다. In-Mo-O 투명 전극상에 제작된 OLEDs와 OPV는 reference ITO 전극에 제작된 OLEDs/OPV와 비교할 때 유사하거나 향상된 특성을 나타내었으며 이는 In-Mo-O 박막이 OLED/OPV용 투명 전극으로 적용이 가능함을 말해준다.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.158-160
• /
• 2001

${\beta}-Ga_2O_3$ nanobelts and nanoparticles were synthesized by a thermal annealing of as-milled GaN powders at $930^{\circ}C$ in nitrogen and oxygen atmosphere. respectively. The width of the nanobelts are $20\;nm{\sim}1000\;nm$. the thickness of the nanobelts are 100 nm. A bundle of the nanobelts is several centimeters in length. The lattice structure of these nanobelts and nanoparticles was identified to be a monoclinic ${\beta}-Ga_2O_3$ by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED).

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.10a
• /
• pp.143-145
• /
• 2007

The correlation between crystallization and deformation behavior in the supercooled liquid region (SLR) of a $Cu_{54}Ni_{6}Zr_{22}Ti_{18}$ bulk metallic glass (BMG) alloy is investigated by compression tests, differential scanning calorimetry (DSC), electron energy loss spectrometry (EELS) and high resolution transmission electron microscopy (HRTEM). In the SLR, This BMG alloy was strongly depended on the deformation temperature and the alloy exhibits important change in deformation behavior after a given time which is directly connected to the development of crystallization. Compressive stress impeded decomposition and consequently retarded forming of nano-crystal, which led to enlarge the homogeneous deformation region of the BMG alloy in SLR during compression test.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.1
• /
• pp.132-138
• /
• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1220-1221
• /
• 2008

Submicron-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst(Ni)/buffer(Al/Ni/TiN)/W-tip. This study focuses on elucidating how the Al/Ni/TiN stacked buffer layer affects the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM), high-resolution transmission electron microscopy(HRTEM), and x-ray photoelectron spectroscopy(XPS) are used to monitor the nanostructures, surface morphologies, chemical bonds of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the excellent performances.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.36-37
• /
• 2006

Both negative and positive substrate bias effects on the structural properties and field-emission characteristics are investigated. carbon nanotubes (CNTs) are grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. Characterization using various techniques, such as field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of CNTs grown can be changed and controlled by the application of substrate bias during CNT growth. It is for the first time observed that the prevailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negative biasing would be more effectively role in the vertical-alignment of CNTs compared to positive biasing. However, the CNTs grown under the positively bias condition display much better electron emission capabilities than those grown under negative bias or without bias. The reasons for all the measured data regarding the structural properties of CNTs are discussed to confirm the correlation with the observed field-emissive properties.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.26-26
• /
• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.120-120
• /
• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).