• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.360-364
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• 2015

Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

• Journal of Electrical Engineering and Technology
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• v.10 no.5
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• pp.2070-2076
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• 2015

Nano composite materials were multi-constituent combinations of nano dimensional phases with distinct differences in structure, chemistry and properties. Nano particles were less likely to create large stress concentrations and thereby can avoid the compromise of the material ductility while improve other mechanical properties. Corona discharge was an electrical discharge. The ionization of a fluid surrounding a conductor was electrically energized. This discharge would occur when the strength of the electric field around the conductor was high enough to form a conductive region, but not high enough to cause electrical breakdown or arcing to nearby objects. This paper shows all the studies done on the preparation of nano fillers. Special attention has given to the ACSR transmission line conductor, TiO₂ nano fillers and also to the evaluation of corona resistance on dielectric materials discussed in detail. The measurement of the dielectric properties of the nano fillers and the parameters influencing them were also discussed in the paper. Corona discharge test reveals that in 0%N ACSR sample corona loss was directly proportional to the applied line voltage. No significant change in corona loss between 0%N and 1%N. When TiO₂ nano filler concentration was increased up to 10%N fine decrement in corona loss was found when compared to base ACSR conductor, corona loss was decreased by 40.67% in 10%N ACSR sample. It was also found from the surface conditions test that inorganic TiO₂ nano filler increases the key parameters like tensile strength and erosion depth.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.1
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• pp.91-97
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• 2014

Recently, the LED(Light Emitting Diode) is expected to replace conventional lamps including incandescent, halogen and fluorescent lamps for some general illumination application, due to some obvious features such as high luminous efficiency, safety, long life, environment-friendly characteristics and so on. To drive the LED, a single stage PFC(Power Factor Correction) flyback converter has been adopted to satisfy the isolation, PFC and low cost. The conventional flyback LED driver has the serious disadvantage of high 120Hz output current ripple caused by the PFC operation. To overcome this drawback, a new PFC flyback with low 120Hz output current ripple is proposed in this paper. It is composed of 2 power stages, the DCM(Discontinuous Conduction Mode) flyback converter for PFC and BCM(Boundary Conduction Mode) boost converter for tightly regulated LED current. Since the link capacitor is located in the secondary side, its voltage stress is small. Moreover, since the driver is composed of 2 power stages, small output filter and link capacitor can be used. Especially, since the flyback is operated at DCM, the PFC can be automatically obtained and thus, an additional PFC IC is not necessary. Therefore, only one control IC for BCM boost converter is required. To confirm the validity of the proposed converter, theoretical analysis and experimental results from a prototype of 24W LED driver are presented.

• Tribology and Lubricants
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• v.37 no.6
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• pp.224-231
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• 2021

Recently, the waterproofing performance of high-voltage connectors in automotive vehicles has attracted increased interest. In this study, an optimal cross-sectional shape was derived to obtain uniform contact pressure and strain by considering stress relaxation problems caused by initial tension when mounting a seal. A high strain of 52.1 was distributed in the round region, owing to excessive initial tension. The finite element method (FEM) analysis indicated that the strain corresponding to the optimal initial tensile was 11. We adopted six design factors to optimize the seal cross-section and three factors as the main design factors. An orthogonal arrangement table was prepared using Minitab. FEM analyses of 16 study models were conducted to determine the optimized model. The contact pressure of the optimization model is the most evenly distributed while satisfying the waterproof performance of 0.47 MPa. Compared to the initial model, the difference in strain decreases from 35.5% to 19.6%. Finally, the derived cross-sectional shape can reduce the strain of the round region by 33.8% and the differences in the contact pressure at the upper and lower surfaces by 42% and 76%, respectively.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.195-206
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• 2024

Shenzhen Innovation Light source Facility (SILF) is a 3.0 GeV fourth generation diffraction limited synchrotron light source currently under construction in Shenzhen. The SILF storage ring is proposed to use two 500 MHz single cell superconducting radio frequency (SRF) cavities to provide 2.4 MV RF voltage. In this study, we examined the geometric structure of mature CESR superconducting cavities and adopted a beam-pipe-type extraction scheme for high-order modes (HOM). One of the objectives of SRF cavity design and optimization in this study is to reduce E_p/E_acc and B_p/E_acc as much as possible to reduce power loss and ensure stable operation of the cavity. To reduce the risk of beam instability and thermal breakdown, the HOM and Multipacting (MP) are simulated. Moreover, the mechanical properties of the cavity are analyzed, including frequency sensitivity from pressure of liquid helium (LHe), stress, tuning, Lorentz force detuning (LFD), the microphone effect, and buckling. By comprehensive design and optimization of 500 MHz single-cell SRF cavities, a superconducting cavity for SILF storage ring was developed. This paper will detailed present the design and simulation.

• Molecules and Cells
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• v.43 no.1
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• pp.66-75
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• 2020

Saturated fatty acids contribute to β-cell dysfunction in the onset of type 2 diabetes mellitus. Cellular responses to lipotoxicity include oxidative stress, endoplasmic reticulum (ER) stress, and blockage of autophagy. Palmitate induces ER Ca²⁺ depletion followed by notable store-operated Ca²⁺ entry. Subsequent elevation of cytosolic Ca²⁺ can activate undesirable signaling pathways culminating in cell death. Mitochondrial Ca²⁺ uniporter (MCU) is the major route for Ca²⁺ uptake into the matrix and couples metabolism with insulin secretion. However, it has been unclear whether mitochondrial Ca²⁺ uptake plays a protective role or contributes to lipotoxicity. Here, we observed palmitate upregulated MCU protein expression in a mouse clonal β-cell, MIN6, under normal glucose, but not high glucose medium. Palmitate elevated baseline cytosolic Ca²⁺ concentration ([Ca²⁺]_i) and reduced depolarization-triggered Ca²⁺ influx likely due to the inactivation of voltage-gated Ca²⁺ channels (VGCCs). Targeted reduction of MCU expression using RNA interference abolished mitochondrial superoxide production but exacerbated palmitate-induced [Ca²⁺]_i overload. Consequently, MCU knockdown aggravated blockage of autophagic degradation. In contrast, co-treatment with verapamil, a VGCC inhibitor, prevented palmitate-induced basal [Ca²⁺]_i elevation and defective [Ca²⁺]_i transients. Extracellular Ca²⁺ chelation as well as VGCC inhibitors effectively rescued autophagy defects and cytotoxicity. These observations suggest enhanced mitochondrial Ca²⁺ uptake via MCU upregulation is a mechanism by which pancreatic β-cells are able to alleviate cytosolic Ca²⁺ overload and its detrimental consequences.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.134-135
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• 2003

The dental implant materials required good mechanical properties, such as fatigue strength, combined with a high resistance to corrosion. For increasing fatigue resistance and delaying onset of stress corrosion cracking, shot peening has been used for > 50 years to extend service life of metal components. However, there is no information on the electrochemical behavior of shot peened and hydroxyapatite(HA) coated Ti-6Al-4V alloys. To increase fatigue strength, good corrosion resistance, and biocompatibility, the electrochemical characteristics of Ti/TiN/HA coated and shot peened Ti-6Al-4V alloys by electron beam physical vapor deposition(EB-PVD) have been researched by various electrochemical method in 0.9%NaCl. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. The produced materials were quenched at 1000$^{\circ}C$ under high purity dried Ar atmosphere and were hold at 500$^{\circ}C$ for 2 hrs to achieve the fatigue strength(1140㎫) of materials. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. Shot peening(SP) and sand blasting treatment was carried out for 1, 5, and 10min. On the surface of Ti-6Al-4V alloys using the steel balls of 0.5mm and alumina sand of 40$\mu\textrm{m}$ size. Ti/TiN/HA multilayer coatings were carried out by using electron-beam deposition method(EB-PVD) as shown Fig. 1. Bulk Ti, powder TiN and hydroxyapatite were used as the source of the deposition materials. Electrons were accelerated by high voltage of 4.2kV with 80 - 120mA on the deposition materials at 350$^{\circ}C$ in 2.0 X 10-6 torr vacuum. Ti/TiN/HA multilayer coated surfaces and layers were investigated by SEM and XRD. A saturated calomel electrode as a reference electrode, and high density carbon electrode as a counter electrode, were set according to ASTM GS-87. The potentials were controlled at a scan rate of 100 mV/min. by a potentiostat (EG&G Co.273A) connected to a computer system. Electrochemical tests were used to investigate the electrochemical characteristics of Ti/TiN/HA coated and shot peened materials in 0.9% NaCl solution at 36.5$^{\circ}C$. After each electrochemical measurement, the corrosion surface of each sample was investigated by SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.4
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• pp.73-84
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• 2015

Electricity generation using fossil fuels has caused environmental pollution. To solve this problem, research on new renewable energy sources (solar, wind power, geothermal heat, etc.) to replace fossil fuels is ongoing. These devices are able to generate power consistently. However, they have many weaknesses, such as high installation costs and limits to possible setup environments. Therefore, an active study on piezoelectric harvesting technology that is able to surmount the limitations of existing energy technologies is underway. Piezoelectric harvesting technology uses the piezoelectric effect, which occurs in crystals that generate voltage when stress is applied. Therefore, it has advantages, such as a wider installation base and lower technological costs. In this study, a piezoelectric harvesting device imitating seaweed, which has a consistent motion caused by fluid, is used. Thus, it can regenerate electricity at sea or on a bridge pillar, which has a constant turbulent flow. The components of the device include circuitry, springs, an electric generator, and balancing and buoyancy elements. Additionally, multiphysics analysis coupled with fluid, structure, and piezoelectric elements is conducted using COMSOL Multiphysics to evaluate performance. Through this program, displacement and electric power were analyzed, and the actual performance was confirmed by the experiment.