• Journal of Power Electronics
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• v.4 no.3
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• pp.161-168
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• 2004

This paper presents a new circuit topology of high-frequency soft switching commutation boost type PWM chopper-fed DC-DC power converter with a loadside auxiliary passive resonant snubber. In the proposed boost type chopper-fed DC-DC power converter circuit operating under a principle of ZCS turn-on and ZVS turn-off commutation, the capacitor and inductor in the auxiliary passive resonant circuit works as the lossless resonant snubber. In addition to this, the voltage and current peak stresses of the power semiconductor devices as well as their di/dt or dv/dt dynamic stress can be effectively reduced by the single passive resonant snubber treated here. Moreover, it is proved that chopper-fed DC-DC power converter circuit topology with an auxiliary passive resonant snubber could solve some problems on the conventional boost type hard switching PWM chopper-fed DC-DC power converter. The simulation results of this converter are illustrated and discussed as compared with the experimental ones. The feasible effectiveness of this soft witching DC-DC power converter with a single passive resonant snubber is verified by the 5kW, 20kHz experimental breadboard set up to be built and tested for new energy utilization such as solar photovoltaic generators and fuel sell generators.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.282-285
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• 2014

We have investigated the structural and electrical properties of Si-Zn-Sn-O (SZTO) thin films deposited by RF magnetron sputtering at various deposition temperatures from RT to $350^{\circ}C$. All the SZTO thin fims are amorphous structure. The mobility of SZTO thin film has been changed depending on the deposition temperature. SZTO thin film transistor shows mobility of 8.715 $cm^2/Vs$ at room temperature. We performed the electrical stress test by applying gate and drain voltage. SZTO thin film transistor shows good stability deposited at room temperature while showing poor stability deposited at $350^{\circ}C$. As a result, the electrical performance and stability have been changed depending on deposition temperature mainly because high deposition temperature loosened the amorphous structure generating more oxygen vacancies.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2668-2670
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• 1999

In the past, the PWM converter had a large switching loss by hard switching and difficult to high frequency operation. The resonance converter to decrease the switching loss and EMI is required the frequency control and needed to reduce the voltage or current stress at each parts. So, this paper propose the 3-phase boost converter and the method to compensated input power factor by control the amplitude - an instantaneous value of the DC inductor current -and control the switching frequency that a modulation error by the ripple of the DC inductor current. The proposed 3-phase PWM boost converter of single phase control type can takes higher capacity and compensate the power factor by using Feed back controller at each phase for the existing 3-phase bridge rectifier type. Moreover the 3-phase full bridge type using the rectifier at each 3-phase circuit will be small size reactor and compensate input power factor by minimize harmonic components of each phase.

• Journal of Korean Society for Quality Management
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• v.39 no.4
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• pp.507-515
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• 2011

MIL-HDBK-217 has played a pivotal role in reliability prediction of electronic equipments for more than 30 years. Recently, RIAC developed a new methodology $217Plus^{TM}$which officially replaces MIL-HDBK-217. Sensitivity analysis of the 217Plus component models to various parameters has been performed and meaningful observations have been drawn in this study. We first briefly reviewed the $217Plus^{TM}$ methodolog and compared it with the conventional model, MIL-HDBK-217. We then performed sensitivity analysis $217Plus^{TM}$ component models to various parameters. Based on the six parameters and an orthogonal array selected, we have performed indepth analyses concerning parameter effects on the model. Our result indicates that, among various parameters, operating temperature and temperature rise during operation have the most significant impacts on the life of a component, and thus a design robust to high temperature is the most importantly required. Next, year of manufacture, duty cycle, and voltage stress are weaker but may be significant when they are in heavy load conditions. Although our study is restricted to a specific type of diodes, the results are still valid to other cases. The results in this study not only figure out the behavior of the predicted failure rate as a function of parameters but provide meaningful guidelines for practical applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.466-467
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• 2008

In case of a line-to-ground fault at transmission lines, a portion of fault current will flow into the earth through the footings of the faulted tower causing electrical potential rise nearby the faulted tower footings. In this situation, any buried pipelines or structures nearby the faulted tower can be exposed to the electrical stress by earth potential rise. Although many research works has been conducted on this phenomena, there has been no clear answer of the required separation distance between tower footings and neary buried pipeline because of its dependancy on the soil electrical charactersics of the concerned area and the faulted system.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1857-1862
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• 2008

Resonant frequency tuning of micro devices is essential to achieve performance uniformity and high sensitivity. Previously reported frequency tuning methods using electrostatic force or mass deposition are not directly applicable to non-conducting polymer devices and have limitations such as dielectric breakdown or low tunable bandwidth. In this paper, thermally frequency-tunable microactuators with poly-dimethylsiloxane membranes are proposed. Permanent and/or nonpermanent frequency tunings are possible using a simple temperature control of the device. Resonant frequency and Q-factor variations of devices according to temperature change were studied using a micro heater and laser Doppler vibrometer. The initial resonant frequencies determined by polymer curing and hardening temperatures are reversibly tuned by thermal cycles. The measured resonant frequency of 9.7 kHz was tuned up by ${\sim}25%$ and Q-factor was increased from 14.5 to 27 as the micro heater voltage increased from 0 to 70 V.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.2
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• pp.209-216
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• 2001

The conventional three-level high frequency phase-shifted dc/dc converter has a disadvantage that a circulating current flows through transformer and switching devices during the freewheeling interval. Due to this circulating current and RMS current stress, conduction losses of transformer and switching devices increases. To alleviate these problems, we propose an improved three-level Zero Voltage and Zero Current Switchig (ZVZCS) dc/dc converter using a tapped inductor, a snubber capacitor and two snubber diodes attached at the secondary side of transformer. The proposed ZVZCS converter is verified on a 7kW, 30kHz experimental prototype.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.81.2-81.2
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• 2011

The gas diffusion layer (GDL) consists of two main parts, the GDL backing layer, called as a substrate and the micro porous layer (MPL) coated on the GDBL. In this process, carbon particles of MPL penetrates to the GDBL consequently forms MPL penetration part. In this study, the micro porous layer (MPL) penetration thickness is determined as a design parameter of the GDL which affect pore size distribution profile through the GDL inducing different mass transfer characteristics. The pore size distribution and water permeability characteristics of the GDL are investigated and the cell performance is evaluated under fully/low humidification conditions. Transient response and voltage instability are also studied. In addition, to determine the effects of MPL penetration on the degradation, the carbon corrosion stress test is conducted. The GDL that have deep MPL penetration thickness shows better performance in high current density region because of enhanced water management, however, loss of penetrated MPL parts is shown after aging and it induces worse water management characteristics.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.885-886
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• 2006

We have proposed a 100 MVA, 3 phases, 154 kV class HTS transformer which will substitute for 60 MVA conventional transformer. In this paper, we designed conceptually the structure of the superconducting windings of a single phase 33 MVA transformer. The power transformer of 154 kV class has a tertiary winding besides primary and secondary windings. So the HTS transformer should have the 3rd superconducting winding, it makes the cost of the HTS transformer high and the efficiency low. Further more we considered On Load Tap Changer (OLTC) in HTS power transformer. OLTC equipment is required for fitting to a power transformer by which the voltage ratio between the windings can be varied while the transformer is on load. We analyzed the electrical characteristics of the HTS transformer such as magnetic stress and AC loss.