• Title/Summary/Keyword: high voltage stress

검색결과 551건 처리시간 0.036초

ZPCE계 바리스터의 전기적 성질 및 안정성 (Electrical Properties and Stability of ZPCE Based Varistors)

  • 남춘우;윤한수;류정선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.190-195
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    • 2000
  • The electrical properties and stability of ZPCE varistors consisted of $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics were investigated. $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$, respectively, without and with 0.5 mol% $Er_2O_3$. The varistors sintered at $1300^{\circ}C$ exhibited a better nonlinearity than that $1350^{\circ}C$. The varistors with $Er_2O_3$ of 0.5 mol% exhibited a high nonlinear exponent of 52.8. However, they easily degraded due to the low density below 85% of TD. On the other hand, the varistors sintered at $1350^{\circ}C$ without $Er_2O_3$ exhibited an extremely poor nonlinearity, but the varistors with $Er_2O_3$ of 0.5 mol% exhibited a relatively good nonlinearity, which the nonlinear exponent is 34.8 and the leakage current is $7.4\;{\mu}A$ Morever, they exhibited a very high stability, which the variation rate of varistor voltage, nonlinear exponent, and leakage current are -0.9%, -2.9%, and +2.7%, respectively, under the third stress $(0.80 V_{1mA}/90^{\circ}C/12h)$ + $(0.85 V_{1mA}/115^{\circ}C/12h)$ + $(0.90 V_{1mA}/120^{\circ}C/12h)$. Consequently, it was estimated that $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics will be usefully applied to develop the advanced $Pr_6O_{11}$-based ZnO varistors.

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Improvement in the Negative Bias Stability on the Water Vapor Permeation Barriers on ZnO-based Thin Film Transistors

  • 한동석;신새영;김웅선;박재형;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.450-450
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    • 2012
  • In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

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FCVA 방법으로 증착된 DLC 박막의 열처리에 따른 구조적, 전기적 물성 분석 (Effects of thermal treatment on structural and electrical properties of DLC films deposited by FCVA method)

  • 김영도;장석모;박창균;엄현석;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 C
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    • pp.1536-1538
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    • 2002
  • Effects at thermal treatment on the structural and electrical properties at DLC films have been studied. The DLC films were deposited by using a modified FCVA system as a function at negative substrate bias voltage, deposition time, and nitrogen flow rate. The thermal treatment on DLC films could be achieved by performing the RTA process at $600^{\circ}C$, 2min. Structural investigation on the thermal treatment effect was evaluated by inspecting the Raman spectroscopy, XPS, AFM, and internal compressive stress. In addition, the electrical properties of DLC films were evaluated by using the high current source and Lab-View data acquisition system. As the result at RTA treatment, $sp^3/sp^2$ ratio and internal compressive stress of the DLC films were decreased tram 5% to 22% and from 1GPa to 3GPa, and the $I_D/I_G$ intensity ratios was increased from 0.19 to 0.35. It was also found that the variation of internal stress of DLC films strongly agree with the variation of $sp^3/sp^2$ fraction and $I_D/I_G$ intensity ratio.

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전력 케이블에서 반도전층의 역할과 요구 특성 (The functions & Requirements of the Semi-Conducting layer in the power cable.)

  • 정윤택;남종철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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    • pp.101-105
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    • 2001
  • 고압용 가교 Polyethylene 절연 케이블의 도체와 절연체 사이, 절연체와 외부 차폐층 사이에는 계면에서의 부분방전을 방지하고 전기적 스트레스를 완화할 목적으로 반도전층이 설계되어 있다. 이 반도전층의 성질은 케이블의 품질과 신뢰성에 매우 중요한 관련이 있다. 일반적으로 반도전층은 압출 성형하는데 Base Polymer에 다량의 카본블랙을 혼합하여 도전화 한다. 절연층과 반도전층간 계면의 평활도는 전력 케이블의 수명과 깊은 관계가 있는데 만약 평활도가 좋지 않으면 전기적 Stress 가 증가하여 전선 수명이 짧아진다. 계면 평활도를 나쁘게 하는 주 요인은 계면의 Void, 반도전층의 돌기와 이물, 탄화물 등이다. 반도전 Compound 제조에 있어서 Carbon Black의 선택과 분산성은 전선수명을 결정하는 중요한 요소이다.

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넓은 충전 범위를 갖는 전기 자동차용 급속 충전기의 고효율 운전을 위한 손실 분석 (Power Loss Analysis of EV Fast Charger with Wide Charging Voltage Range for High Efficiency Operation)

  • 김대중;박진혁;이교범
    • 전기학회논문지
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    • 제63권8호
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    • pp.1055-1063
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    • 2014
  • Power losses of a 1-stage DC-DC converter and 2-stage DC-DC converter are compared in this paper. A phase-shift full-bridge DC-DC converter is considered as 1-stage topology. This topology has disadvantages in the stress of rectifier diodes because of the resonance between the leakage inductor of the transformer and the junction capacitor of the rectifier diode. 2-stage topology is composed of an LLC resonant full-bridge DC-DC converter and buck converter. The LLC resonant full-bridge DC-DC converter does not need an RC snubber circuit of the rectifier diode. However, there is the drawback that the switching loss of the buck converter is large due to the hard switching operation. To reduce the switching loss of the buck converter, SiC MOSFET is used. This paper analyzes and compares power losses of two topologies considering temperature condition. The validity of the power loss analysis and calculation is verified by a PSIM simulation model.

초고압 $SF_6$ 가스차단기의 소전류 차단성능 해석기술 I (Evaluation Method I of the Small Current Breaking Performance for SF(sub)6-Blown High-Voltage Gas Circuit Breakers)

  • 송기동;이병운;박경엽;박정후
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제50권7호
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    • pp.331-337
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    • 2001
  • With the increasing reliability of analysis schemes and the dramatically increased calculating speed, the computer simulation has become and indispensable process to predict the interruption capacity of circuit breakers. Generally, circuit breakers have to possess both the small current and large current interruption abilities and the circuit breaker designers need to evaluate its capacities to save the time and the expense. The analysis of small current and the large current interruption performances have been considered separately because the phenomena occurring in a interrupter are quite different. To analyze the dielectric recovery after large current interruption many physical phenomena such as heat transfer, convection and arc radiation, the nozzle ablation, the ionization of high temperature SF(sub)6 gas, the electric and themagnetic forces and so forth mush be considered. However, in the analysis of small current interruption performance only the cold gas flow analysis needs to be carried out because the capacitive current is to small that the influence from the current can be neglected. In this paper, an empirical equation which is obtained from a series of tests to estimate the dielectric recovery strength has been applied to a real circuit breaker. The results of analysis have been compared with the test results and the reliability has been investigated.

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MHD 램프용 전자식 안정기의 보호 회로 설계 (Protection Circuit Design of Electronic Ballcst for MHD Lamps)

  • 이봉진;김기남;박종연
    • 조명전기설비학회논문지
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    • 제22권6호
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    • pp.1-6
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    • 2008
  • 본 논문에서는 전자식 안정기의 출력이 개방 또는 단락되었을 경우에 대한 보호 회로를 설계하였다. 전자식 안정기의 출력이 개방되었을 경우 일정한 주기의 고전압이 발생하여 스위치 소자에 전압 스트레스를 가하게 된다. 또한 출력이 단락되었을 경우 과전류가 흐르게 되어 안정기 발열 및 반도체 소자의 수명 감소 등 문제가 발생하게 된다. 이를 해결하고자 TTL 소자 및 수동 소자로 구성된 보호 회로를 제안하였으며 제안된 보호 회로는 저단가 구현 및 높은 신뢰성의 장점이 있다. 제안된 보호 회로를 실제 안정기에 연결하여 상황별 실험을 통하여 유용함을 증명하였다.

소결온도에 따른 Zn-Pr-Co-Cr-La 산화물계 바리스터의 DC 가속열화 특성 (DC Accelerated Aging Characteristics of Zn-Pr-Co-Cr-La Oxides-Based Varistors with Sintering Temperature)

  • 김명준;유대훈;박종아;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.383-386
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    • 2004
  • DC accelerated aging characteristics of Zn-Pr-Co-Cr-La oxides-based varistors were investigated with various sintering temperatures. The varistors sintered at $1240^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 79.3 and a leakage current of $0.3\;{\mu}A$, whereas completely degraded because of thermal runaway owing to low sintered density. The varistors sintered at $1250^{\circ}C$ exhibited not only a high nonlinearity with the nonlinear exponent 61.4 and the leakage current 0.7 ${\mu}A$, but also a high stability with the variation rates of varistor voltage and nonlinear exponent are -1.01% and -10.67%, respectively, under DC stress condition such as $(0.85\;V_{1mA}/115^{\circ}C/24\;h)+(0.90\;V_{1mA}/120^{\circ}C/24\;h)+(0.95\;V_{1mA}/125^{\circ}C/24\;h)+(0.95\;V_{1mA}/150^{\circ}C/24\;h)$.

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72.5kV GIS 전력 장비의 KEPCO 기준 내진 및 응력 해석 (Seismic and Stress Analysis of 72.5kV GIS for Technical Specification of KEPCO)

  • 이재환;김영중;김소울;방명석
    • 한국전산구조공학회논문집
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    • 제30권3호
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    • pp.207-214
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    • 2017
  • 국내의 72.5kV 이상, 주파수 60Hz의 송배전설비인 옥내 및 옥외용 가스절연개폐장치(GIS)는 내진 안전성에 대해 국가에서 정한 한전표준규격(ES-6110-0002)을 만족해야 한다. 이 규격에서 명시되지 않은 사항은 IEC 62271-203, 62271-207 등의 관련 기기 규격에 준한다. 한전표준규격에서 기기는 정상사용상태와 특수사용상태에서 건전성이 유지되어야 한다. 안전성 판단을 위해 ASME BPVC SEC.VIII 내압용기 설계 기준에 의해 A6061-T6 재질의 GIS에 대한 정상사용상태 기준과 국내 한전표준규격과 국외 IEC 62271-207에 의한 특수사용상태 기준(지진)에 대한 총체적 응력상태를 판단하였다. 한전표준규격 기준(0.22g) 적용시, 최종응력이 알루미늄인 Part A는 78.2MPa, Part D2의 경우 102.3MPa로, ASME 허용응력 값 181.5MPa를 만족하고 있다. IEC 62271-207 High 0.5g의 경우에도 최종응력은 Part A는 90.5MPa, Part D2는 103.8MPa이다. 본 연구 결과, 72.5kV GIS는 한전표준규격의 구조안전성과 내진성능을 충분히 만족함을 보이고 있다. 내진해석으로 내진시험을 수행할 수 없는 대형 전력기기의 내진성능 실증에 활용될 수 있을 것으로 기대된다.

가속수명시험을 이용한 Packaging Substrate PCB의 ECM에 대한 신뢰성 예측에 관한 연구 (A Study on the Reliability Prediction about ECM of Packaging Substrate PCB by Using Accelerated Life Test)

  • 강대중;이화기
    • 대한안전경영과학회지
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    • 제15권1호
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    • pp.109-120
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    • 2013
  • As information-oriented industry has been developed and electronic devices has come to be smaller, lighter, multifunctional, and high speed, the components used to the devices need to be much high density and should have find pattern due to high integration. Also, diverse reliability problems happen as user environment is getting harsher. For this reasons, establishing and securing products and components reliability comes to key factor in company's competitiveness. It makes accelerated test important to check product reliability in fast way. Out of fine pattern failure modes, failure of Electrochemical Migration(ECM) is kind of degradation of insulation resistance by electro-chemical reaction, which it comes to be accelerated by biased voltage in high temperature and high humidity environment. In this thesis, the accelerated life test for failure caused by ECM on fine pattern substrate, $20/20{\mu}m$ pattern width/space applied by Semi Additive Process, was performed, and through this test, the investigation of failure mechanism and the life-time prediction evaluation under actual user environment was implemented. The result of accelerated test has been compared and estimated with life distribution and life stress relatively by using Minitab software and its acceleration rate was also tested. Through estimated weibull distribution, B10 life has been estimated under 95% confidence level of failure data happened in each test conditions. And the life in actual usage environment has been predicted by using generalized Eyring model considering temperature and humidity by developing Arrhenius reaction rate theory, and acceleration factors by test conditions have been calculated.