• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2698-2700
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• 1999

The MRC minimizes a parasitic oscillation using the resonant tank circuit absorbed parasitic reactances existing in a converter circuit. So the converter is capable of operating at a high switching and also reducing the losses. But the resonant voltage stress across a resonant switch is 4-5 times a input voltage. This high voltage stress increases the conduction loss in MOSFET. In this paper, the CM forward MRC with synchronous rectifier and AT forward MRC are compared about efficiency and semiconductor stress. For analysis, we have built a 50W CM forward MRC and a 50W AT forward MRC. in which the input voltage is 48V, output voltage is 5V, each other. The measured voltage stress is about 170V of 2.9 times the input voltage in the AT Forward MRC, about 106V of 1.8 times the input voltage in CM forward MRC, and the efficiency is 81.05% in AT Forward MRC, 83.61% in CM forward MRC.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 학술대회 논문집
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• pp.399-403
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• 2005

In this paper, we analyze on the effect of RC filter to mitigate transient overvoltage on the high voltage induction motor fed by H-bridge cascaded 7-level inverter. The switching surge voltage becomes the major cause to occur the insulation failure by serious voltage stress in the stator winding of high voltage induction motor. The effect of switching surge appears more serious in high voltage induction motor than low voltage induction motor. Consequently, we demonstrated that the RC filter connected to the motor terminals greatly reduces the transient voltage stress md ringing. The results of simulation show the suppression of transient overvoltage at the motor end of a long cable. using EMTP

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권9호
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• pp.576-583
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching device. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress that is almost twice of input voltage in a free-wheeling diode. In the proposed circuit, it has the voltage stress that is lower than input voltage with modifing a location of free -wheeling diode. In this paper, it expained the circuit operation of each mode and analyzed feedback-loop stabilization. Also it confirmed the waveform of each mode with simulation result. The experiment result verified the simulation waveform and compared the voltage stress of a free -wheeling diode in the exsiting circuit with the voltage stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.60-64
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• 2020

In this study, to develop angle ring pressboards for high voltage transformers, the radius and thickness are modified under the conditions of temperature and humidity. In particular, a pressboard with a thickness of 6 mm and a radius at the angled part were investigated based on the simulation of the principal stress from the angled optimization profile shape. As a result, by the appropriate application of a higher temperature, the solid insulation can be improved to reduce the moisture content for an optimized profile angle of a high voltage transformer. This also results in the improvement of the safety factor by 25%. It is determined that the electrical insulation properties of pressboards in high voltage transformers can be enhanced by improving their properties.

• 전기학회논문지
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• 제56권7호
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• pp.1250-1254
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• 2007

The multi-resonant(MR) converter has a characteristics that the parasitic components existing in the converter are absorbed into the resonant circuits. The designed MR converter could be got a high efficiency and a high power density because the switching power losses are reduced effectively due to resonant switching circuit. However, the high resonant voltage stress of switching power devices leads to the conduction loss. In this paper, it is proposed the novel alternated(AT) flyback multi-resonant converter to overcome such a drawback. The suggested converter dc input is divided by two series input filter capacitors. The resonant stress voltage is reduced to 2-3 times the input voltage without any complexity and it provides the various circuit schemes in lots of applications. The proposed flyback MR converter is verified through simulation and experiment.

• 전력전자학회논문지
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• 제20권2호
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• pp.122-129
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• 2015

In this study, we propose a low voltage stress and cost-effective light emitting diode (LED) driver capable of multi-channel current balancing. Conventional LED drivers require as many boost converters as the number of LED channels, whereas the proposed LED driver requires only one buck converter and several balancing capacitors instead of several expensive boost converters. Additionally, while the components of the boost converter have high voltage stress and depend on the LED driving voltage, components of the proposed driver have about one-half of the voltage stress across all components. The proposed driver exhibits high reliability and cost effectiveness because it only uses few DC blocking capacitors with no additional active devices to balance the current of multi-channel LEDs. The proposed driver exhibits high reliability and cost effectiveness. The validity of the proposed driver is confirmed through a theoretical analysis. An explanation of the design considerations and experimental results were obtained using a prototype applicable to a 46" LED-TV.

• 전력전자학회논문지
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• 제24권6호
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• pp.406-410
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• 2019

Three-level (3L) DC-DC converters are appropriate for high-input-voltage applications. Although the voltage stress of TL converter switches can be reduced to half of the input voltage, the primary side has a large circulating current, which degrades efficiency. In this study, a dual half-bridge cascaded TL converter is presented to reduce this circulating current and thus decrease the conduction loss of the primary circuit. Moreover, the proposed converter can reduce the voltage stress of rectifier diodes, thereby reducing their conduction loss. Therefore, efficiency can be improved by reducing the conduction loss of the primary circuit and rectifier diodes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 F
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• pp.1999-2001
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• 1997

The main two drawbacks of the Sin91e Stage PFC (SS-PFC) converters employing a DCM Boost PFC cell are relatively high voltage stress on the bulk capacitor and the input current harmonic distortion. The high voltage stress on bulk capacitor makes the SS-PFC converter impractical in a universal input application and the input current harmonic distortion lowers power factor. In this paper a selective variable frequency control that reduces the voltage stress on the bulk capacitor and the input current harmonic distortion is proposed. Computer simulation results of the proposed control method are presented.