• International journal of advanced smart convergence
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• v.5 no.2
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• pp.1-7
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• 2016

Recently, with the development of advanced thin film devices comes the need for constant high quality vacuum as the deposition pressure is more demanding. It is for this reason our research seeks to understand how the variable design factors are employed in such vacuum systems. In this study, the effects of design factor applications on the vacuum characteristics were simulated to obtain the optimum design modeling of variable models on an ultra high vacuum system. The commercial vacuum system simulator, $VacSim^{(multi)}$, was used in our investigation. The reliability of the employed simulator was verified by the simulation of the commercially available models of ultra high vacuum system. Simulated vacuum characteristics of the proposed modeling aligned with the observed experimental behavior of real systems. Simulated behaviors showed the optimum design models for the ideal conditions to achieve optimal pressure, pumping speed, and compression ratio in these systems.

• Journal of Ceramic Processing Research
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• v.21
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• pp.47-52
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• 2020

Graphene was synthesized using rapid thermal chemical vapor deposition (RT-CVD) equipment designed to produce largearea graphene at high speed. The effects of methane (CH₄), argon (Ar), and hydrogen (H₂) gases were investigated between 800 ℃ and 1,000 ℃ during heating and cooling in the graphene synthesis process. The findings reveal that multilayer domains increased due to hydrogen pretreatment with increase in temperature. Furthermore, when pretreated with the same gas, it was confirmed that the post-argon-treated sample cooled from 1,000 ℃ to 800 ℃ had a higher I_D/I_G value than that of the other samples. This result was consistent with the sheet resistance properties of graphene. The sample prepared in methane atmosphere maintained during both the pre-treatment and post-treatment demonstrated the lowest sheet resistance of 787.49 Ω/sq. Maintaining the methane gas atmosphere in the high-temperature region during graphene synthesis by RT-CVD reduced the defects and improved the electrical property.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.16-20
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• 2004

YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.37-37
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• 2012

The coated steels, mainly with zinc by either hot-dip galvanizing or electroplating, are widely used for panels of automotive, electrical appliances and construction, whose size of world market have reached 130 million tons in 2008. Current issues for the coated steels can be integrated in terms of high functionality, low cost, environment-friend and available resource. The best solution can be provided if thin layer coating with higher quality is produced by an eco-friendly process, and PVD, physical vapor deposition, can be an alternative practice to existing coating processes. PVD technologies have been very common ones in electronic and semiconductor industries, but recognized as non-profitable processes for the coated steels due to low process speed and lack of continuous operation skills. Systematic researches from 1990s in Europe, even though discouraged by a shutdown of the first Japanese PVD coating plant in 1999, have realized several continuous PVD coating plants, and also enhanced launching of developments in steel industries. To be successful with PVD coating technologies over existing ones, productivity to meet economics should be created from a highly sophisticated process. Some PVD technologies fit for the high-speed process will be introduced together with experiences from industrial applications.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Journal of Korean Neurosurgical Society
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• v.38 no.2
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• pp.121-125
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• 2005

Objective : Many recent reports have shown that the mature mammalian brain harbors multipotent stem cells, rendering the brain capable of generating new neurons and glia throughout life. Harvested stem cells from an adult rat are transplanted in order to evaluate the cell survival and differentiation. Methods : Using a percoll gradient with a high speed centrifugation method, we isolate neural stem/progenitor cells were isolated from the subventricular zone[SVZ] of a syngeneic adult Fisher 344 rats brain. For 14days expansion, the cultured cells comprised of a heterogeneous population with the majority of cells expressing nestin and/or GFAP. After expanding the SVZ cells in the presence of basic fibroblast growth factor-2, and transplanting then into the hippocampus of normal rats, the survival and differentiation of those cells were examined. For transplantation, the cultured cells were labeled with BrdU two days prior to use. In order to test their survival, the cells were transplanted into the dorsal hippocampus of normal adult Fisher 344 rats. Results : The preliminary data showed that at 7days after transplantation, BrdU+ transplanted cells were observed around the injection deposition sites. Immuno-fluorescent microscopy revealed that the cells co-expressed BrdU+ and neuronal marker ${\beta}$-tubulin III. Conclusion : The data demonstrate that the in vitro expanded SVZ cells can survive in a heterotypic environment and develop a neuronal phenotype in the neurogenic region. However more research will be needed to examine the longer survival time points and quantifying the differentiation in the transplanted cells in an injured brain environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.483-486
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• 2001

Rapid Prototyping(RP) has been widely applied in designing and developing processes a new product. The functional requirements of a rapid prototyping system are high speed and high accuracy, and they depend on the operating parameters, some of which can be set by users. The accuracy is evaluated by dimensional errors and form errors of manufactured pars. A specially designed specimen with various features has been used for the accuracy evaluation. According to the Taguchi experimental design techniques, and orthogonal array of experiments has been set which has the least number of experimental runs to find the parametric effects. A laser scanner is used to obtain the point data of the parts and Surfacer is used to determine the lengths and angles. The conditions for the FDM manufacturing parametrs have been found.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Tribology and Lubricants
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• v.34 no.3
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• pp.84-92
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• 2018

Bearings are essential for reducing vibration and wear, in order to achieve high durability and increase longevity. White metal treatment of tilting pads via centrifugal casting method has the possibility of increasing durability. However, this manufacturing method has drawbacks such as long processing time, high defect rate, and harmful health effects. Laser cladding deposition technique is a powerful method that can address these issues by decreasing the processing time and providing good adhesion. In this study, we suggest optimum conditions for laser cladding deposition that can be used in industrial applications. We deposited a soft white metal layer on SCM440 that is primarily used in shafts to minimize wear of bearing pads. During the laser deposition process, we controlled factors such as laser power, powder feed rate, and laser head speed to determine the optimum conditions. In addition, we measured the hardness using micro Vickers, and performed field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and friction tests to investigate the mechanical properties and surface characteristics for different parameters. Based on the experimental results, we suggest that laser power, powder feed rate, and laser head speed of 1.3 kW, 2.5 rpm, and 10 mm/s, respectively, constitute the optimum conditions for producing white metals using laser cladding.