• 센서학회지
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• 제31권3호
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• pp.145-150
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• 2022

The importance of flexible polymer-based pressure sensors is growing in fields like healthcare monitoring, tactile recognition, gesture recognition, human-machine interface, and robot skin. In particular, health monitoring and tactile devices require high sensor sensitivity. Researchers have worked on sensor material and structure to achieve high sensitivity. A simple and effective method has been to employ three-dimensional pressure sensors. Three-dimensional (3D) structures dramatically increase sensor sensitivity by achieving larger local deformations for the same pressure. In this paper, the performance, manufacturing method, material, and structure of high-sensitivity flexible pressure sensors based on 3D structures, are reviewed.

• Current Optics and Photonics
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• 제5권4호
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• pp.444-449
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• 2021

A photonic crystal coupled-cavity waveguide created on silicon-on-insulator is designed to act as a refractive-index-sensing device at midinfrared wavelengths around 4 ㎛. To realize high sensitivity, effort is made to engineer the structural parameters to obtain strong modal confinement, which can enhance the interaction between the resonance modes and the analyzed sample. By adjusting some parameters, including the shape of the cavity, the width of the coupling cavity, and the size of the surrounding dielectric columns, a high-sensitivity refractive-index sensor based on the optimized photonic crystal coupled-cavity waveguide is proposed, and a sensitivity of approximately 2620 nm/RIU obtained. When an analyte is measured in the range of 1.0-1.4, the sensor can always maintain a high sensitivity of greater than 2400 nm/RIU. This work demonstrates the viability of high-sensitivity photonic crystal waveguide devices in the midinfrared band.

• 센서학회지
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• 제13권4호
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• pp.309-315
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• 2004

In the pressure sensor, about below 20 kPa, the center boss diaphragm structure is generally used, but it is hard to obtain the high sensitivity because the center boss structure is limited at the thickness and size of diaphragm with chip size. Therefore, this paper suggests that the Center boss structure has surface etched diaphragm using a stress concentration to improve the sensitivity. We carried out the simulation and fabrication applied new diaphragm design. In the result, the sensitivity is improved to 60% without the change of non-linearity (0.14%FS). So, the Center boss of surface etched diaphragm can be applied for the high sensitivity in the low-pressure sensor.

• 센서학회지
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• 제13권3호
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• pp.175-181
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• 2004

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1515_1516
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• 2009

A 440MHz wireless and passive surface acoustic wave (SAW) based micro-sensor was developed for simultaneous measurement of temperature and humidity. The developed sensor is composed of a SAW reflective delay lines structured by an IDT (Inter-Digital Transducer), four reflectors and humidity sensitive film (polyimide). Polyimide was dry-ecthed by RIE (Reactive Ion Etching) to obtain high roughness, which gives the large reaction area resulting in high sensitivity. In wireless testing using a network analyzer, sharp reflection peaks with high S/N ratio, small signal attenuation, and few spurious peaks were observed in the time domain. High sensitivity towards the temperature and humidiy were also observed in the large concentration range. The obtained sensitivity was $16.8^{\circ}/^{\circ}C$ for temperature sensor and $15.8^{\circ}$/%RH for humidity sensor.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.337-341
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• 2010

A high sensitivity fiber optic temperature sensor based on a side-polished fiber (SPF) coupled to a tapered multimode overlay waveguide (MMOW) is proposed and studied. Both tapered and non-tapered MMOW were considered to study the effect of tapering of MMOW on the characteristics of the device and to investigate the criticality of the uniformity of the multimode overlay waveguide over the SPF. Present study shows that tapering of the MMOW can be used to tune the desired wavelength range without any loss in the sensitivity. Sensitivity up to 9 nm/$^{\circ}C$ within the temperature range of 25 to $100^{\circ}C$ can be achieved with the proposed sensor, almost 6 times higher compared even to state-of-the-art high-sensitivity grating-based fiber optic temperature sensors.

• Current Optics and Photonics
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• 제7권2호
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• pp.200-206
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• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

• Smart Structures and Systems
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• 제2권2호
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• pp.189-208
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• 2006

Monitoring large-scale civil engineering structures such as offshore platforms and high-large buildings requires a large number of sensors of different types. Innovative sensor data information technologies are very extremely important for data transmission, storage and retrieval of large volume sensor data generated from large sensor networks. How to obtain the optimal sensor set and placement is more and more concerned by researchers in vibration-based SHM. In this paper, a method of determining the sensor location which aims to extract the dynamic parameter effectively is presented. The method selects the number and place of sensor being installed on or in structure by through the tolerance domain statistical inference algorithm combined with second order sensitivity technology. The method proposal first finds and determines the sub-set sensors from the theoretic measure point derived from analytical model by the statistical tolerance domain procedure under the principle of modal effective independence. The second step is to judge whether the sorted out measured point set has sensitive to the dynamic change of structure by utilizing second order characteristic value sensitivity analysis. A 76-high-building benchmark mode and an offshore platform structure sensor optimal selection are demonstrated and result shows that the method is available and feasible.

• 센서학회지
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• 제30권5호
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• pp.295-299
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• 2021

In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.