• Progress in Medical Physics
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• v.28 no.3
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• pp.106-110
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• 2017

The variable density phantom fabricated with varying the infill values of 3D printer to provide more accurate dose verification of radiation treatments. A total of 20 samples of rectangular shape were fabricated by using the $Finebot^{TM}$ (AnyWorks; Korea) Z420 model ($width{\times}length{\times}height=50mm{\times}50mm{\times}10mm$) varying the infill value from 5% to 100%. The samples were scanned with 1-mm thickness using a Philips Big Bore Brilliance CT Scanner (Philips Medical, Eindhoven, Netherlands). The average Hounsfield Unit (HU) measured by the region of interest (ROI) on the transversal CT images. The average HU and the infill values of the 3D printer measured through the 2D area profile measurement method exhibited a strong linear relationship (adjusted R-square=0.99563) in which the average HU changed from -926.8 to 36.7, while the infill values varied from 5% to 100%. This study showed the feasibility fabricating variable density phantoms using the 3D printer with FDM (Fused Deposition Modeling)-type and PLA (Poly Lactic Acid) materials.

• Journal of The Korean Association For Science Education
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• v.9 no.1
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• pp.53-67
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• 1989

General Physics CAI Program was developed for university science and engineering student. The program was restricted in the field of mechanics and was mainly aimed for individual tutorial. This project was supported by Government. Department of Education, physics attending their general physics classes in university. The program was written in BASIC and constructed by frame, 4 professors and 6 graduate students were involved in the project. Summary of this study is as follows. 1. The theory of CAI was illuminated from a new point of view to enhance usefullness of CAI. Also the structure of frame type CAI was studied. 2. The program was developed as follows 1) The program consisted of main program, pretest routine, tutorial routine, final test routine, and several other routines for program control. Whole program was written in BASIC. 2) 20 problems for pretest, 90 problems and subsequent hints and solutions for tutorial, 20 problems for final test were developed. 3) According to student's pretest result, tutorial course was routed through several different courses which contain different number of problems 4) The expected rate of achievment for final test was set to 75%. 5) Data of students response to problems including number of tries and time used were recorded for the purpose of achievment analisys 3. 22 students went through whole course and the results were as follows. 1) Pretest marks were widly distributed from 20 points to 100. It means that achievement of high school physics course were not enough. 2) Throughout tutorial course, students who had got higher mark in pretest answered correctly in the first trial at a higher rate of 78 %. Overall rate of correct answer in the second trial was distributed appropriatly. 3) Average mark of final test was 78.8 points, rather a higher rate of achievement than expected. This means that the program was constructed well.

• Journal of The Korean Association For Science Education
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• v.19 no.1
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• pp.62-77
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• 1999

Idealization has an important role in the process of learning as well as in physics research. The purpose of this study was to survey students' and science teachers' recognition of the ideal conditions involved in the process of problem solving and of explaining the natural phenomena. The instrument for probing the understanding of the ideal conditions in the domains of force, electricity and heat was administered to general high and science high school students and science teachers. The framework of responses composed of three categories. The first category is "idealized conditions relevant to problem", the second "not relevant idealized conditions", which has more delicate subcategories of general/ irrelevant conditions, simple statement of formula/ law, repeating problems, uncorrect explaining/ describing conditions, and the last "no responses". The results of analysis showed that the majority of the subjects well understood the various ideal conditions, especially for science high school students. But some of them could not differentiate the ideal condition from the general conditions, or they simply repeat the problem situation or the formula. The understanding of idealization is different by the domains of physics. We discovered that the misconceptions about the ideal conditions in various physical phenomena and revealed some interconnection of researches in the fields of misconception and the ideal condition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.273-278
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• 2012

Over the last decade, the hafnium-based gate dielectric materials have been studied for many application fields. Because these materials had excellent behaviors for suppressing the quantum-mechanical tunneling through the thinner dielectric layer with higher dielectric constant (high-K) than $SiO_2$ gate oxides. Although high-K materials compensated the deterioration of electrical properties for decreasing the thickness of dielectric layer in MOSFET structure, their nano-mechanical properties of $HfO_2$ thin film features were hardly known. Thus, we examined nano-mechanical properties of the Hafnium oxide ($HfO_2$) thin film in order to optimize the gate dielectric layer. The $HfO_2$ thin films were deposited by rf magnetron sputter using hafnium (99.99%) target according to various oxygen gas flows. After deposition, the $HfO_2$ thin films were annealed after annealing at $400^{\circ}C$, $600^{\circ}C$ and $800^{\circ}C$ for 20 min in nitrogen ambient. From the results, the current density of $HfO_2$ thin film for 8 sccm oxygen gas flow became better performance with increasing annealing temperature. The nano-indenter and Weibull distribution were measured by a quantitative calculation of the thin film stress. The $HfO_2$ thin film after annealing at $400^{\circ}C$ had tensile stress. However, the $HfO_2$ thin film with increasing the annealing temperature up to $800^{\circ}C$ had changed compressive stress. This could be due to the nanocrystal of the $HfO_2$ thin film. In particular, the $HfO_2$ thin film after annealing at $400^{\circ}C$ had lower tensile stress, such as 5.35 GPa for the oxygen gas flow of 4 sccm and 5.54 GPa for the oxygen gas flow of 8 sccm. While the $HfO_2$ thin film after annealing at $800^{\circ}C$ had increased the stress value, such as 9.09 GPa for the oxygen gas flow of 4 sccm and 8.17 GPa for the oxygen gas flow of 8 sccm. From these results, the temperature dependence of stress state of $HfO_2$ thin films were understood.

• Journal of The Korean Association For Science Education
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• v.35 no.3
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• pp.375-382
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• 2015

Textbooks corresponding to curriculum goals are necessary because they are specific products of curriculum and are the most important materials for teaching, learning, and evaluation. In particular, learning objectives written in textbooks should be clearly described because they play a role in promoting learning by showing learning goals to learners clearly. This study analyzed the characteristics of verbs used as predicate of learning objectives written in high school physics I and II textbooks of Korea and compared them with physics textbooks of Singapore and the United States. Results show that Korean textbooks have less kinds of verbs compared to those of Singapore and the United States, and the verbs with abstract and comprehensive meaning such as 'understand' and 'know' were mainly used. In American textbooks, it was noticeable that no verbs have been used by more than 10%. When classifying the learning objectives in the two Korean textbooks, cognitive domain accounted for 98 to 99%, and inquiry domain accounted for only 1% to 2%. With regard to physics textbooks of the United States, inquiry domain accounted for a large proportion of domains in learning objectives compared with physics textbooks of Korea and Singapore. Physics textbooks of Singapore were similar to those of Korea in that learning objectives were biased toward cognitive domain, but differed from those of Korea in that learning objectives were specifically described using action verbs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.505-512
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• 2023

This study investigated crystal structures, microstructures, and electric-field-induced strain (EFIS) properties of Bi-based lead-free ferroelectric/relaxor composites. Bi_1/2Na_0.82K_0.18)_1/2TiO₃ (BNKT) as a ferroelectric material and 0.78Bi_1/2(Na_0.78K_0.22)_1/2TiO₃-0.02LaFeO₃ (BNKT2LF) as a relaxor material were synthesized using a conventional solid-state reaction method, and the resulting BNKT2LF powders were subjected to high-energy ball milling (HEBM) after calcination. As a result, HEBM proved a larger average grain size of sintered samples compared to conventional ball milling (CBM). In addition, the increased sintering time led to grain growth. Furthermore, HEBM treatment and sintering time demonstrated a significant effect on EFIS of BNKT/BNKT2LF composites. At 6 kV/mm, 0.35% of the maximum strain (S_max) was observed in the HEBM sample sintered for 12 h. The unipolar strain curves of CBM samples were almost linear, indicating almost no phase transitions, while HEBM samples displayed phase transitions at 5~6 kV/mm for all sintering time levels, showing the highest S_max/E_max value of 700 pm/V. These results indicated that HEBM treatment with a long sintering time might significantly enhance the electromechanical strain properties of BNT-based ceramics.

• Journal of Astronomy and Space Sciences
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• v.33 no.2
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• pp.69-73
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• 2016

We use the non-stationary three dimensional two-layer outer gap model to explain gamma-ray emissions from a pulsar magnetosphere. We found out that for some pulsars like the Geminga pulsar, it was hard to explain emissions above a level of around 1 GeV. We then developed the model into a non-stationary model. In this model we assigned a power-law distribution to one or more of the spectral parameters proposed in the previous model and calculated the weighted phase-averaged spectrum. Though this model is suitable for some pulsars, it still cannot explain the high energy emission of the Geminga pulsar. An Inverse-Compton Scattering component between the primary particles and the radio photons in the outer magnetosphere was introduced into the model, and this component produced a sufficient number of GeV photons in the spectrum of the Geminga pulsar.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.475-476
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• 2015

We analyze the host galaxy of the tidal disruption object, Swift J1644+57, based on long-term optical to NIR data obtained with CQUEAN and UKIRT WFCAM observations. We decompose the bulge component using high resolution HST WFC3 images. We conclude that the host galaxy is bulge dominant. We investigate optical to NIR light curves and estimate the multi-band fluxes of the host galaxy. We fit spectral energy distribution (SED) models in order to determine the stellar mass. Finally, we estimate the mass of the black hole in the center of the host galaxy based on several scale relations.