• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.70-70
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• 2011

The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is beyond a tipping point in the complex worldwide energy outlook. Truly, a revolution in both the technological advancements of solar PV and the deployment of this energy technology is underway; PV is no longer an outlier. The birth of modern photovoltaics (PV) traces only to the mid-1950s, with the Bell Telephone Laboratories' development of an efficient, single-crystal Si solar cell. Since then, Si has dominated the technology and the markets, from space through terrestrial applications. Recently, some significant shift toward technology diversity have taken place. Some focus of this presentation will be directed toward PV R&D and technology advances, with indications of the limitations and relative strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). Recent advances, contributions, industry growth, and technological pathways for transformational now and near-term technologies (Si and primarily thin films) and status and forecasts for next-generation PV (nanotechnologies and non-conventional and "new-physics" approaches) are evaluated. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, ${\ldots}$ and solar hydrogen) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. This presentation provides insights to the reasons for PV technology emergence, how these technologies have to be developed (an appreciation of the history of solar PV)-and where we can expect to be by this mid-21st century.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.230-236
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• 1993

We have the homoepitaxiallayers on the surfaces of Si(111) with and without the adsorbed surfactants, for example, Ag or Sn. In this paper, We have studied the difference of growth for these two cases by the observation of intensity oscillations of RHEED specular spots during the growing processes. In the case of growth without the adsorbed surfactants, the Si atoms fill first the stacking fault layer of Si(111) 7 ${\times}$7 structure. Therefore, the irregular oscillations are observed in the early stage of growing process. However, in the case of growth with the adsorbed surfactants, the surfactants already have the ${\sqrt}{3}$ ${\times}$ ${\sqrt}{3}$ structures on the surfaces of Si(111) at the adjucate temperatures of 300`$600^{\circ}C$ and 190~$860^{\circ}C$ for the surfactants of Ag and Sn, respectively. We also find that the number of oscillations is a little larger for the case of growth with the adsorbed surfactants. The reason for this is that for the case of growth with the adsorbed surfactants, the activation energies of Si atoms decrease due to the segregation of surfactants toward the growing surfaces.

• Progress in Medical Physics
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• v.31 no.2
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• pp.9-19
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• 2020

Purpose: This study aims to develop a multi-purpose electron beam irradiation device for preclinical research and material testing using the research electron linear accelerator installed at the Dongnam Institute of Radiological and Medical Sciences. Methods: The fabricated irradiation device comprises a dual scattering foil and collimator. The correct scattering foil thickness, in terms of the energy loss and beam profile uniformity, was determined using Monte Carlo calculations. The ion-chamber and radiochromic films were used to determine the reference dose-rate (Gy/s) and beam profiles as functions of the source to surface distance (SSD) and pulse frequency. Results: The dose-rates for the electron beams were evaluated for the range from 59.16 Gy/s to 5.22 cGy/s at SSDs of 40-120 cm, by controlling the pulse frequency. Furthermore, uniform dose distributions in the electron fields were achieved up to approximately 10 cm in diameter. An empirical formula for the systematic dose-rate calculation for the irradiation system was established using the measured data. Conclusions: A wide dose-rate range electron beam irradiation device was successfully developed in this study. The pre-clinical studies relating to FLASH radiotherapy to the conventional level were made available. Additionally, material studies were made available using a quantified irradiation system. Future studies are required to improve the energy, dose-rate, and field uniformity of the irradiation system.

• Journal of Astronomy and Space Sciences
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• v.37 no.3
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• pp.209-218
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• 2020

This paper describes the initial operations and preliminary results of the Instrument for the study of Stable/Storm-time Space (ISSS) onboard the microsatellite Next Generation Small Satellite-1 (NEXTSat-1), which was launched on December 4, 2018 into a sun-synchronous orbit at an altitude of 575 km with an orbital inclination angle of 97.7°. The spacecraft and the instruments have been working normally, and the results from the observations are in agreement with those from other satellites. Nevertheless, improvement in both the spacecraft/instrument operation and the analysis is suggested to produce more fruitful scientific results from the satellite operations. It is expected that the ISSS observations will become the main mission of the NEXTSat-1 at the end of 2020, when the technological experiments and astronomical observations terminate after two years of operation.

• Journal of Radiation Protection and Research
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• v.11 no.1
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• pp.77-82
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• 1986

Determination of the relation between the kerma(Kinetic Energy Released in Material) and the absorbed dose is one of the basic problems of dosimetry. Kerma and absorbed dose were measured for 6 MV X-ray from the high energy medical linear accelerator and $^{60}Co$ gamma-ray. The experimental results show that the absorbed dose in the transient equilibrium region practically coincide with the kerma in water and Al for $^{60}Co$. The maximum dose depths were $1.45g/cm^2$ for 6MV X-ray and $0.48g/cm^2\;for\;^{60}Co$ gamma-ray. The ratios of the absorbed dose at maximum build-up to the collision kerma at the surface, ($K^{att}$), were 0.949 for 6MV X-ray and 0.992 for $^{60}Co$ gamma-ray. No difference was found between water and Al when the standard field size was used. This results show that the dependence of $K^{att}$ on the material is very small.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.37-42
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• 1996

The $Bi_{12}(Si,Ge)O_{20}$ single crystals were prepared by Czochralski method and the study of electrical and optical properties were carried out. The activation energy of the electrical conductivity was $E_g$=1.12 eV. The optical energy gap measured in the room temperature is found to be 2.3 eV. A.c. conductivity of crystal $Bi_{12}(Si,Ge)O_{20}$ was measured at temperatures from 290 K to 570 K in the frequency range from 50 kHz to 30 MHz. The a.c. conductivity is proportional to ${\omega}^s$. In view of this it should be hopping conduction mechanisms. At high frequencies, the power exponent was s=2. The low frequency dielectric constants were 54 for $Bi_{12}(Si,Ge)O_{20}$ and 41 for $Bi_{12}(Si,Ge)O_{20}$ single crystals.

• Progress in Medical Physics
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• v.13 no.4
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• pp.229-233
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• 2002

We have tested a combined CT/SPECT system with a single CZT detector for x-ray and gamma-ray medical imaging. The size of detector is 10$\times$10$\times$5 ㎣, and the anodes are pixellated as a 4$\times$4 array with a pixel dimension of $1.5\times$1.5 $\textrm{mm}^2$. The cathode was coated with a continuous Au-plated. We have characterized the system performance by scanning a radiographic resolution phantom and the Hoffman Brain phantom. Pulse counting electronics with very short shaping time (50 ㎱) are used to satisfy high photon rates in x-ray imaging, and response linearity up to 3$\times$10$^{5}$ counts per second per detector element is achieved. Energy resolution of 10.4% and 5.3% FWHM at Tc-99m 140 keV peak are obtained for the 50 ㎱ and 2 $mutextrm{s}$ shaping times, respectively. The spatial resolutions of CT and SPECT are about 1mm and 9mm, respectively. Photopeak efficiency of detector systems are 41.0% for 50㎱ and 72.5% for 2 $mutextrm{s}$ shaping time.

• Progress in Medical Physics
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• v.9 no.2
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• pp.105-113
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• 1998

Accurate radiation dosimetric characters is very important to determine of dose to a radiotherapeutic patient. Medical linear accelerators have been developed not only its new quality of convenient operation but also electric moderation. It is reliable to measure more detail physical parameter that linac's internal ability. Typically, radiation dosimetric tool is classified ionization chamber, film, thermoluminescence dosimeter, etc. Nowaday, Electronic Portal Imaging Device is smeared in radiation field to verification of treatment region. EPID's image was focused that using both on-line image verification and absolutely minimum absorbed dose during radiotherapy. So, Electronic Portal Imaging was tested for quality evaluation of medical linear accelerator had its pure conditional flash. This study has performed symmetry, Light/Radiation field congruence, and energy check, geometry difference on wedge filter using a liquid filled ion chamber (EPID). Prior to irradiated on EPID, high energy photon beam is checked with ion chamber. Using these results more convenient dosimetric method is accomplished by EPID that taken digital image. Medical image is acquired with EPID too. Therefore, EPID can be analyzed by numerical information for what want to see or get more knowledge for natural human condition.

• Korean Journal of Optics and Photonics
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• v.33 no.6
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• pp.252-259
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• 2022

We have conducted a study to control the light-intensity distribution at the output end of a multimode optical fiber via estimating the transmission matrix. A circularly arranged Hadamard eigenmode phase distribution was implemented using a spatial light modulator, and the transmission matrix of a multimode optical fiber was experimentally obtained using a four-phase method. Based on the derived transmission matrix, the spatial phase distribution of light incident upon the optical fiber was adjusted via the spatial light modulator in advance, to focus the light at a desired position at the optical fiber output. The light could be focused with an intensity up to 359.6 times as high as that of the surrounding background signal at a specific position of the multimode fiber's output end, and the intensity of the focused beam was on average 104.6 times as large as that of the background signal, across the area of the multimode fiber's core.