• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.727-730
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• 2009

Highly active and stable nano-sized Ni catalysts supported on MgO-$Al_2O_3$ calcined from hydrotalcite-like materials have been successfully developed with a strong metal to support interaction (SMSI) to enhance the coke resistance in combined $H_2O$ and $CO_2$ reforming of $CH_4$ (CSCRM) for syngas ($H_2$/CO=2) production. The change of the surface area and NiO crystallite size with varying the pre-calcination temperature of support and Mgo content was investigated in relation to the coke resistance. As increasing the pre-calcination temperature, the surface area decreases and the metal to support interaction becomes weak. As a consequence, the coke deposition was more severe on catalysts pre-calcined at high temperature. It was concluded that highly dispersed Ni metal in the surface of Ni/MgO-$Al_2O_3$ catalyst (MgO=30 wt%) pre-calcined at $800^{\circ}C$ had a strong metal to support interaction (SMSI) resulting in an increase of coke resistance and high activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.267-267
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• 2012

$TiO_2$-Ni inverse catalysts were prepared using atomic layer deposition (ALD) process and catalytic $CO_2$ reforming of methane (CRM) reaction over catalysts (either bare Ni or $TiO_2$ coated-Ni particles) were performed using a continuous flow reactor at $800^{\circ}C$. $TiO_2$-Ni inverse catalyst showed higher catalytic reactivity at initial stage of CRM reactions at $800^{\circ}C$ comparing to bare Ni catalysts. Moreover, catalytic activity of $TiO_2$/Ni catalyst was kept high during 13 hrs of the CRM reactions at $800^{\circ}C$, whereas deactivation of bare Ni surface was started within 1hr under same conditions. The results of surface analysis using SEM, XPS, and Raman showed that deposition of graphitic carbon was effectively suppressed in a presence of $TiO_2$ nanoparticles on Ni surface, thereby improving catalytic reactivity and stability of $TiO_2$/Ni catalytic systems. We suggest that utilizing decoration effect of metal catalyst with oxide nanoaprticles is of great potential to develop metal-based catalysts with high stability and reactivity.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.475-481
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• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.505-512
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• 1994

It has been reported that a biocement obtained by mixing CaO-SiO2-P2O5 glass powder and ammonium phosphate solution has biocompatibility as well as high strength. However, the compositional dependence on its hardening and hydroxyapatite formation phenomena has not been studied. Therefore, the main objective of this work is to study the effects of P2O5, MgO in CaO-SiO2 system glass on the hardening and hydroxyapatite formation. When more than 50 mole% of CaO containing CaO-SiO2 glasses was reacted with ammonium phosphate solution, CaNH4PO4.H2O crystal was formed, but the glass with less than 50 mol% of CaO formed (NH4)2HPO4 and NH4H2PO4 crystals which are derived from ammonium phosphate solution without reacting with the glasses. As the amount of P2O5 in CaO-SiO2-P2O5 glass system was increased, the formation of CaNH4PO4.H2O crystal was enhanced. When those hardened samples were reacted with tris-buffer solution, hydroxyapatite was obtained only for the sample with CaNH4PO4.H2O. While the substitution of MgO for CaO decreased the formation of CaNH4PO4.H2O crystal. MgNH4PO4.H2O crystla was formed in high MgO containing glass, which did not react with tris-buffer solution.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.57-57
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• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.198-198
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• 2006

Tin doped $In_2O_3$ sputtering target is widely used to produce a various kinds of flat panel display because of high transmittance in visible region and high electrical conductivity. In2O3 and SnO2 powders were prepared by a homogeneous precipitation method using metal source, respectively, the calcining and sintering behavior of the indium-tin oxide(In2O3-SnO2) composite powders were studied. The tin oxide(SnO2) dispersion condition in ITO sputtering target was improved by increasing calcining temperature. And the tin oxide dispersion was also improved by reducing the tin oxide contents in the ITO target from 30 to 5wt%. SnO2 dispersion and densification of ITO target is very difficult to control due to sublimation of SnO2 at over 1150C.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.199-203
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• 2017

$ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.