• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.

• 보존과학회지
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• 제33권3호
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• pp.215-223
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• 2017

익산 미륵사지 석탑의 사리공 내에서 출토된 유리 유물 30점을 분석하여 이들의 성분특성과 상관성, 발색원소 등을 알아보고자 하였으며, 이를 왕궁리 출토 유리의 연구결과와 비교하여 상관관계를 검토하였다. 성분분석 결과, 유리구슬 24점은 $SiO_2$와 $Na_2O$ 성분을 다량 함유한 소다유리군에 속하며, 세부적으로 소다-알루미나유리계 ($Na_2O-Al_2O_3-CaO-Si_2O$)였다. 안정제로서 $Al_2O_3$, CaO, MgO가 첨가된 것으로 보이며, 이를 통해 LCHA(Low CaO, High $Al_2O_3$)형으로 분류할 수 있다. 착색물질은 Ti, Mn, Fe, Cu, Pb 등 성분이 발색에 영향을 준 것으로 판단된다. 나머지 6점은 모두 녹색계열의 유리판 또는 미상의 파편으로 PbO의 함량이 약 70wt.%, $SiO_2$의 함량이 약 30wt.%인 전형적인 $PbO-SiO_2$계의 납유리였다. 이들 유물을 동일 유적권인 왕궁리 출토 유리구슬의 성분과 비교한 결과, 일부 소다유리인 점은 유사하나 $Na_2O$의 함량이 상대적으로 미륵사지 유리 구슬이 매우 높고, 대부분 $K_2O$와 CaO의 함량이 낮다는 점이 다르다. 납유리의 경우도 PbO와 $SiO_2$ 함량이 약간 차이가 있다. 이는 두 유적지에서 제작된 유리 유물이 서로 다른 재료 또는 기술을 이용하였을 가능성도 있는 것으로 보인다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.374-377
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• 2009

The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• 한국결정성장학회지
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• 제6권4호
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• pp.558-563
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• 1996

첨가된 소결조제가 다른 $Si_{3}N_{4}/20$ vol% SiC 초미립복합재료의 파괴강도를 측정하였다. 소결조제로서 6 wt% $Y_{2}O_{3}$와 2 wt% $Al_{2}O_{3}$를 사용한 시편의 실온강도는 높았지만 낮은 입계상의 연화온도에 기인하여 급격한 강도저하가 나타났다. 소결조제로서 8 wt% $Y_{2}O_{3}$만을 사용한 시편의 $1400^{\circ}C$에서의 고온강도가 높았는데 이는 높은 입계상 연화온도와 입계유리상의 결정화에 기인하는 것으로 판단하였다.

• 한국수소및신에너지학회논문집
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• 제28권4호
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• pp.419-425
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• 2017

In this study, an efficient dye-sensitive solar cells (DSSC) was developed after post-treatment of ZnO on $TiO_2$ photoelectrode. The $TiO_2$ electrode with ZnO post treatment was prepared with Titanium isoporopoxide in Zinc Nitrate Hexahydrate aqueous solution by incineration for 30 min at $450^{\circ}C$. The ZnO-post treated $TiO_2$ electrode showed strong dispersion force between particles in relation to the control $TiO_2$, referring high specific surface area and dye-adsorption rate. Proper addition of ZnO enhanced electron mobility and reduced internal resistance and electron recombination. Light conversion efficiency of DSSCs containing the ZnO-posttreated $TiO_2$ electrode increased 35.4% when compared to the DSSCs using $TiO_2$ electrode. It is similar to the DSSCs with $TiCl_4$ post treatment $TiO_2$ electrode. Increasing of light conversion efficiency was due to high specific surface area and dispersion force, and low dye-adsorption rate and electron recombination. Taken together, ZnO may be used as posttreatment of photoelectrode and replaced $TiCl_4$ that has high toxicity and causticity.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.261-265
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• 2010

In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.406-411
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• 2002

Ni-Zn ferrite is required to have predominant and stable characteristics in the range of high frequency for the power line communication, so that microstructures and magnetic properties such as power loss and initial permeability in $Ni_{0.8}Zn_{0.2}Fe_2O_4$ were investigated in terms of variable $Bi_2O_3,CaO$ and $V_2O_5$ contents. $Bi_2O_3$ and $V_2O_5$ liquid phase created during sintering process promoted sintering and grain growth but much of the closed pore existed in the grains. The grain size of the specimens with $V_2O_5$ of over 0.5 wt% decreased as the result of "pinning effect"and the resonance frequency increased with CaO of 0.3we%. The high initial permeability of 81.52%, resonance frequency of 17.05 MHz and low power loss of 17,858 kW/$\textrm{m}^3$ were obtained from the samples with $Bi_2O_3$ of 0.5, CaO of 0.3, and $V_2O_5$ of 0.7 wt%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.17-21
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• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

• Bulletin of the Korean Chemical Society
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• 제32권10호
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• pp.3571-3574
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• 2011

Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.