• 제목/요약/키워드: hetero-integration

검색결과 5건 처리시간 0.023초

상용 PCB 공정을 이용한 RF MEMS 스위치와 DC-DC 컨버터의 이종 통합에 관한 연구 (A Study on a Hetero-Integration of RF MEMS Switch and DC-DC Converter Using Commercial PCB Process)

  • 장연수;양우진;전국진
    • 전자공학회논문지
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    • 제54권6호
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    • pp.25-29
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    • 2017
  • 본 논문에서는 듀로이드와 FR4를 기판으로 하는 재배선층 위에 정전 구동 방식의 RF MEMS 스위치와 승압 DC-DC 컨버터를 결합하는 연구를 진행하였다. 상용 PCB(Printed Circuit Board) 공정으로 듀로이드와 GCPW 전송 선로 조합의 재배선층과 FR4와 CPW 전송 선로 조합의 재배선층을 제작하였다. 상용 PCB 공정 특성에 의하여 전송 선로의 특성 임피던스는 56옴, 59옴 이었으며 이에 대하여 비교 분석하였다. 듀로이드 기판은 유전상수가 작고 두께가 얇으며 GCPW를 적용하였기 때문에 상대적으로 유전상수가 크고 두께가 두꺼우며 CPW 전송 선로를 적용한 FR4 기판보다 6GHz 대역에서 삽입 손실은 약 2.08dB, 반사 손실은 약 3.91dB, 신호 분리도는 약 3.33dB 우수한 것을 확인하였다.

광통신 III-V/Si 레이저 다이오드 기술 동향 (III-V/Si Optical Communication Laser Diode Technology)

  • 김호성;김덕준;김동철;고영호;김갑중;안신모;한원석
    • 전자통신동향분석
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    • 제36권3호
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    • pp.23-33
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    • 2021
  • Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

3-D Hetero-Integration Technologies for Multifunctional Convergence Systems

  • 이강욱
    • 마이크로전자및패키징학회지
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    • 제22권2호
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    • pp.11-19
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    • 2015
  • Since CMOS device scaling has stalled, three-dimensional (3-D) integration allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. 3-D integration has many benefits such as increased multi-functionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, because it vertically stacks multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip. Anticipated applications start with memory, handheld devices, and high-performance computers and especially extend to multifunctional convengence systems such as cloud networking for internet of things, exascale computing for big data server, electrical vehicle system for future automotive, radioactivity safety system, energy harvesting system and, wireless implantable medical system by flexible heterogeneous integrations involving CMOS, MEMS, sensors and photonic circuits. However, heterogeneous integration of different functional devices has many technical challenges owing to various types of size, thickness, and substrate of different functional devices, because they were fabricated by different technologies. This paper describes new 3-D heterogeneous integration technologies of chip self-assembling stacking and 3-D heterogeneous opto-electronics integration, backside TSV fabrication developed by Tohoku University for multifunctional convergence systems. The paper introduce a high speed sensing, highly parallel processing image sensor system comprising a 3-D stacked image sensor with extremely fast signal sensing and processing speed and a 3-D stacked microprocessor with a self-test and self-repair function for autonomous driving assist fabricated by 3-D heterogeneous integration technologies.

Suppression of Shrinkage Mismatch in Hetero-Laminates Between Different Functional LTCC Materials

  • Seung Kyu Jeon;Zeehoon Park;Hyo-Soon Shin;Dong-Hun Yeo;Sahn Nahm
    • 한국전기전자재료학회논문지
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    • 제36권2호
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    • pp.151-157
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    • 2023
  • Integrating dielectric materials into LTCC is a convenient method to increase the integration density in electronic circuits. To enable co-firing of the high-k and low-k dielectric LTCC materials in a multi-material hetero-laminate, the shrinkage characteristics of both materials should be similar. Moreover, thermal expansion mismatch between materials during co-firing should be minimized. The alternating stacking of an LTCC with silica filler and that with calcium-zirconate filler was observed to examine the use of the same glass in different LTCCs to minimize the difference in shrinkage and thermal expansion coefficient. For the LTCC of silica filler with a low dielectric constant and that of calcium zirconate filler with a high dielectric constant, the amount of shrinkage was examined through a thermomechanical analysis, and the predicted appropriate fraction of each filler was applied to green sheets by tape casting. The green sheets of different fillers were alternatingly laminated to the thickness of 500 ㎛. As a result of examining the junction, it was observed through SEM that a complete bonding was achieved by constrained sintering in the structure of 'calcium zirconate 50 vol%-silica 30 vol%-calcium zirconate 50 vol%'.

로봇의 이기종 다중 프로세서 구현을 위한 Serial RapidIO(sRIO) 분석 및 시뮬레이션 (An Analysis and Simulation of sRIO for Implementation of Robot's Hetero-Multi Processor)

  • 문용선;노상현;조광훈;박종규;배영철
    • 한국항행학회논문지
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    • 제14권1호
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    • pp.57-65
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    • 2010
  • 본 연구에서는 새로운 형태의 로봇 제어기의 구조인 이기종 멀티프로세서 제어기의 개념적인 구조를 제시하며, 제어기 내에 분산된 멀티프로세서들을 sRIO 통신을 이용하여 통합하는 구조적인 방법을 소개한다. 또한 sRIO 통신으로 통합된 이기종 멀티프로세서의 구현을 위한 방법으로 FPGA 내에 설계된 sRIO IP Core를 활용한 시뮬레이션을 수행하고 그 결과를 확인하였다.