• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.539-541
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• 2006

전력 반도체의 방열 특성은 수명 및 소손과 관계가 있다. 전력 반도체 자체의 열전달 특성 및 전력 반도체가 취부 되는 방열판의 전도, 대류, 방사의 열전달 특성을 고찰하기 위하여 본 논문에서는 실시간으로 방열판의 온도를 관측하여 전력 반도체의 손실을 확인하였고, 프로파일별 히트 싱크 온도 상승 측정 평균 전류와 전류 프로파일과 의 상관 관계를 분석 하여 방열판 최적화 및 히트 싱크 온도 관측 시 히트 싱크의 모델을 제시하였다.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.556-557
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• 2010

본 논문은 하이브리드 자동차의 구동모터용 인버터에 적용되는 수랭 히트싱크의 설계 타당을 수치해석을 통해 검증하는 방법을 제시한다. 전력변환장치의 손실 계산, 발열체 모델링, 히트싱크 형상 모델링, 수랭 조건 입력, 히트싱크상의 열적 분포 해석, 유체 거동 시뮬레이션의 과정을 거치며, 본 논문에서는 650Vdc, 150kW급의 시리즈 하이브리드 차량의 구동 모터용 인버터를 예로 그 과정을 설명하고자한다.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.10a
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• pp.157-160
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• 2008

색온도 및 광색 가변형 100W RGBY LED 투광기를 개발하기 위하여, 투광기의 광학 및 방열기구를 설계하였다. 또한 100W LED 광원모듈을 구동하기 위한 구동회로와 색온도 및 광색 가변을 위한 제어회로를 개발하였다. 이와 같은 설계결과를 적용하여 100W RGBY 투광기의 시제품을 제작하였고, 시제품의 광학적 성능은 협각 $20^{\circ}$, 중각 $50^{\circ}$, 광각 $75^{\circ}$이상을 만족시켰다. 또한 색온도의 변화는 CIE 1931 색좌표에서 흑체궤적과 일치하여 $2,000K{\sim}10,000K$까지 변화하도록 R,G,B,Y LED의 Duty Ratio를 설정하였다. 또한 방열 특성은 100W 구동시 녹색 LED의 온도는 $37{\sim}41.3^{\circ}C$, heatsink의 온도는 $34{\sim}35^{\circ}C$에서 동작되도록 하였다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.81-85
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• 2002

전기 전자 제품에 사용되는 반도체 칩이나 부품들은 작동시 발열을 하게 되며 이러한 열은 적절히 제거되지 않은 경우 전기 전자 제품의 오작동을 유발시키는 요인이 된다. 발열부품이 작동할 때 발생되는 열을 제거하기 위해서 히트싱크나 냉각팬과 같은 구조를 발열 부품 장착시 같이 설치하는 방법이 일반적으로 사용되는 냉각구조 형태지만 이와 같은 냉각 구조는 최근의 전기 전가 제품의 소형화 추세에 부응하는데는 한계가 있다. 따라서 이러한 냉각 구조의 한계를 보완하기 위한 방안으로써 소형화한 히트싱크, 즉 두께와 방열의 중요 요인이 되는 히트싱크의 방열핀의 크기를 나노미터 단위에서 밀리미터 단위로 제조한 마이크로 히트 싱크를 제조하여 그 효용성에 대해 연구하고자 하였다. 마이크로 히트싱크의 제조는 균일한 포어를 포함한 폴리머 멤브레인에 열전도성이 뛰어난 금속을 무전해 도금하는 방법으로 제조하였으며 주사현미경으로써 관찰하였다.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1997.10a
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• pp.11-13
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• 1997

Abstract - An electronic starter using MOSFET has been designed to take advantage of ideal preheating and starting features which can extend the lifetime of fluorescent lamps. The preheating circuit of the developed electronic starter is consisted of four parts - afull-wave rectifier circuit, an FET switching circuit a timer circuit for the gate switching, and a circuit for end-of-life protection. The circuit is analyzed by using PSpice simulation, and is improved to give an appropriate starting-time through control of R-C time constant of the timer circuit. And the circuit is also provided with an end-of-life protection feature, which utilizes the negative resistance characteristics of a thermistor that is thermally linked to FET through a heatsink. This also protects the FET from any overheating problems. From the results of simulation it is possible to obtain an appropriate value on the starting time for proper ignition and also it is verified that the limit for resistance of the thermistor is dependant on the value of resistance is the timer circuit

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.8
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• pp.1-6
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• 2015

In this paper, we propose the LED(Light-Emitting-Diode) emergency lighting in a tunnel by using the thermoelectric devices. To achieve high generated power, thermoelectric device should be have high Seebeck coefficient and small contact area. Also, we reveal that a moderate heatsink required for high generated power. From the waste heat of LED tunnel lighting module (25W), the generated power was 0.062W by thermoelectric device, and it could illuminate for 1hour after charge the battery of emergency lighting during about 101hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.172-173
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• 2007

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The thermal analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthrough(NPT) Insulated Gate Bipolar Transistor has been studied. For analysis of thermal distribution, we obtained experimental and simulation results by using finite element simulator, Ansys and by using photographic infrared thermometer, we compared experimental date with simulation result. and got good agreement. Also this paper provided thermal distribution of IGBT connected to heat sinks. and this results will be good information to design optimal heat sink for IGBT.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.810-818
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• 2021

A leakage current of ESS is classified mainly by the occurrence from a PCS(Power Conditioning System) section and an unbalanced grid current. The reason for the leakage current from the PCS section is a voltage change by IGBT (Insulated Gate Bipolar Transistor) switching and stray capacitance between the IGBT and heatsink. The leakage current caused by the grid unbalanced current flows to the ESS through the neutral line of grid-connected transformer for the ESS with a three limb iron type of Yg-wire connection. This paper proposes a mechanism for the occurrence of leakage current caused by stray capacitance, which is calculated using the heatsink formula, from the aspect of the PCS section and grid unbalance current. Based on the proposed mechanisms, this study presents the modeling of the leakage current occurrence using PSCAD/EMTDC S/W and evaluates the characteristics of leakage currents from the PCS section and grid unbalanced current. From the simulation result, the leakage current has a large influence on the battery side by confirming that the leakage current from the PCS is increased from 7[mA] to 34[mA], and the leakage current from an unbalanced load to battery housing is increased from 3.96[mA] to 10.76[mA] according to the resistance of the housings and the magnitude of the ground resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.920-923
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• 2013

In this paper, the characteristics of a carbon nanotube composite heat sink proposed to replace the advanced Al heat sinks for LED lighting devices were studied. Proposed CMP-PLA heat sink was made by mixing 20~70 wt% carbon nanotube, 20~70 wt% bio-degradable polymer of melt-blended PLA (poly lactic acid) and PBS (poly butylene succinate) and PLA nucleating agents composed of the mixture of soybean oil and biotites, at $150{\sim}220^{\circ}C$ with 1,000~1,500 rpm. Optical and electric characteristics of 7.5 W LED lighting devices using heat sinks with such prepared CMP-PLA were investigated. And, the properties of the heat, which was not released from the CMP-PLA type heat sinks, was also investigated. The color temperature of LED lighting devices using the CMP-PLA heat sinks was 5,956 K, which is x= 0.32 and y= 0.34 in the XY chromaticity, and the color rendering index was 75. The luminous flux and the luminous efficiency of LED lighting devices using the CMP-PLA heat sinks was 540.6 lm and 72.68 lm/W respectively. Measured initial temperature of the heat sinks was $27^{\circ}C$, and their temperature increased as time to be saturated at $52^{\circ}C$ after an hour.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 1996.06a
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• pp.27-31
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• 1996

In this paper, The SSPA(Solid State Power Amplifier) is 100 watts amplifier which is used with C-Band Satellite communication Up-Link frequency, 5.875 ∼6.425 GHz. SSPA requires more output power than is available from a single GaAs FET with result it is necessary to combine the output of many device. To achieve a high power, it is important to make a good N-way power divider which has a small different phase, good combining efficiency and high power handling capability. The reliability of Power GaAs FET decrease with increasing junction temperature, power amplifier in general dissipate amount of power. It is important to provide them with a heatsink and a temperature compensation circuit to dispose of the unwanted heat. To compensate temperature, Using PIN diode attenuator, it is enable to get a precision gain control. The output power of the SSPA is more than 100 watt with which the TWTA (Traveling-Wave Tube Amplifier) can be replaced. Each stage was measured by the Network analyzer PH8510C, Power meter Booton 42BD, The gain is more than 53 dB, flatness is less than 1.5 dB.