• Korean Journal of Materials Research
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• v.32 no.2
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• pp.66-71
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• 2022

In this article, Pb₂Ba_1.7Sr_0.3Ca₂Cu₃O_10+δ superconductor material was synthesized using conventional solid-state reaction method. X-ray diffraction (XRD) analysis demonstrated one dominant phase 2223 and some impurities in the product powder. The strongest peaks in the XRD pattern were successfully indexed assuming a pseudo-tetragonal cell with lattice constants of a = 3.732, b = 3.733 and c = 14.75 Å for a Pb-Based compound. The crystallite size and lattice strain between the layers of the studied compound were estimated using several methods, namely the Scherrer, Williamson-Hall (W.H), size-strain plot (SSP) and Halder Wagner (H.W) approach. The values of crystallite size, calculated by Scherrer, W.H, SSP and H.W methods, were 89.4540774, 86.658638, 87.7555823 and 85.470086 Å, respectively. Moreover, the lattice strain values obtained by W.H, SSP and H.W methods were 0.0063240, 0.006325 and 0.006, respectively. It was noted that all crystallite size results are consistent; however, the best method is the size-strain plot because it gave a value of R² approaching one. Furthermore, degree of crystallites was calculated and found to be 59.003321%. Resistivity analysis suggests zero-resistance, which is typical of superconducting materials at critical temperature. Four-probe technique was utilized to measure the critical temperature at onset T_c(onset), zero resistivity T_{c(off set)}, and transition (width ΔT), corresponding to temperatures of 128 K, 116 K, and 12 K, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.119-125
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• 2013

In this study, we studied the properties of ZnO(Al) and ZnO(AlGa) thin film according to film thickness deposited on SLG by In-line magnetron sputtering system. XRD, FESEM, 4-point probe, Hall measurement system and UV/Vis-NIR spectrophotometer were employed to analyze the properties of ZnO(Al) and ZnO(AlGa) thin film. The all films exhibited (002) preferential orientation with clear peak shape and high intensity. The carrier concentration and Hall mobility of ZnO(Al) and ZnO(AlGa) thin film were improved with increasing thickness. The resistivity of both films decreased when the film thickness was raised from 500 nm to 1,450 nm. And then relatively the resistivity of ZnO(AlGa) film was lower than that of ZnO(Al) film. The transmittance of the films decreased with increasing film thickness but all films exhibited optical transmittances of over 83.3% in the visible region.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.121-125
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• 2009

Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.103-103
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• 2009

본 논문에서는 기존의 GST(GeSbTe=2:2:5)와 비교하여 상변화 재료로서의 Ga 도핑된 $Ge_2Sb_2Te_5$의 가능성을 확인하고자 하였다. 실험에 사용된 Ga 도핑된 $Ge_2Sb_2Te_5$ 박막은 전통적 melt-quenching 방법에 의해 비정질로 제작된 벌크를 Thermal evaporation을 통하여 Si(100) 및 유리 (coming glass, 7059) 기판 위에 200nm의 두께로 증착하여 제작하였다. 각 박막의 상변화 특성은 여러 온도에서 열처리된 박막을 X-ray diffraction (XRD) 측정을 통하여 확인하였다. 각 조성 박막의 비정질-결정질 상변화속도 비교를 위하여 나노-펄스 스캐너 (nano-pulse scanner)를 사용하여 power; 1~17mW, pulse duration; 10~460ns 범위에서 박막의 상변화에 따른 반사도 차이를 측정 분석하였다. Ga의 도핑농도에 따른 전기적 특성 차이를 확인하기 위하여 4-point probe를 이용하여 박막의 면 저항을 측정하였고 또한 hall 측정을 통하여 박막의 흘 계수, 흘 농도 및 이동도를 확인하고 Ga가 상전이에 미치는 영향에 대하여 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.201-202
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• 2009

ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.740-744
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• 2017

Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.130.2-130.2
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• 2011

본 연구에서는 RF magnetron sputtering을 이용하여 실리콘 박막 태양전지용 ZnO:Al 전면전극을 제작하고 다양한 식각조건에 따른 ZnO:Al 박막의 표면형상 변화와 함께 전기적 및 광학적 특성 변화를 조사하였다. pin 구조를 갖는 실리콘 박막 태양전지의 효율 향상을 위해서는 입사광의 산란효과에 따른 광포획 증가가 필수적이며 이를 위하여 ZnO:Al 전면전극의 표면텍스처링 형성이 필요하다. 식각용액으로는 HCl과 HF 등을 사용하였으며 식각용액 농도 및 식각시간을 변화시켰다. 식각 후의 ZnO:Al 박막의 표면형상은 SEM(Scanning Electron Microscope)과 AFM(Atomic Force Microscope)을 이용하여 분석을 하였고, UV-visible-nIR spectrometer를 이용하여 총 투과도 및 산란 투과도를 측정하였다. 이 외에도 four-point probe 및 Hall measurement를 이용하여 전기적 특성 변화를 조사하였다. 다양한 식각조건에 따라 제조된 ZnO:Al 박막 위에 실리콘 박막 태양전지를 제작하여 전면전극의 표면형상에 따른 태양전지 성능변화를 비교 분석하였다.

• The Journal of Korea Robotics Society
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• v.5 no.4
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• pp.309-317
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• 2010

This paper proposes an efficient measurement system for the velocity and direction of the wind using the dual rotor wind power generator in vessel. Conventional digital measurement system recognizes the direction and the velocity of the wind using the electric compass or synchronous motor and Vane probe method using hall sensors. But each system has its own short-comings: the synchronous motor has a larger measurement error than the magnetic compass and magnetic compass is weak for the external disturbances such as fluctuation of the vessel. To compensate these short-comings, this paper proposes a new compensation algorithm for the fluctuation errors according to the external interference and the unexpected movement of the vessel along the roll and pitch directions. The proposed system is implemented with the dual compasses and a synchronous motor. The proposed independent power generation system can be operated by itself and can raise the efficiency of the wind power generation systems of 30 ~ 400 W installed along the vertical and horizontal axes. The proposed system also realizes the efficient and reliable power production system by the MPPT algorithm for the real-time recognition of the wind direction and velocity. An advanced switching algorithm for the battery charging system has been also proposed. Effectiveness of the proposed algorithm has been verified through the real experiments and the results are demonstrated.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.27.2-27.2
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• 2011

본 연구에서는 저저항/고투과 플렉시블 투명 전극 개발을 위해 금속 그리드가 적용된 투명 전극을 개발하였다. Lift off 공정을 도입하여 플렉시블 PET 기판 위에 Ag grid를 성막하고 이후 연속 공정이 가능한 Roll-to-Roll sputtering system을 이용하여 최적화된 ITO(40nm)/Ag(12nm)/ITO(40nm) 다층 투명 전극을 성막하였다. 제작된 플렉시블 투명 전극의 전기적, 광학적, 구조적 특성 및 기계적/전기적 안정성 평가를 위해 four-point probe measurement, Hall effect measurement, UV/Vis spectrometer, scanning electron microscopy 및 bending tester를 이용하여 각각의 특성을 분석하였다. Ag grid가 적용된 ITO/Ag/ITO 투명 전극에서 Ag의 배선 간격이 0.75 mm일 때 0.18 ohm/sq. 의 낮은 면 저항과 가시광선 영역에서 80% 이상의 높은 투과율을 나타내었으며, 이러한 저저항 및 고투과율 특성으로 인해 최적화된 배선 간격 0.75 mm에서 $538.11{\times}10^{-3}\;ohm^{-1}$의 매우 높은 figure of merit ($T^{10}/R_{sh}$) 값을 확보할 수 있었다. 기계적 응력에 따른 전기적 안정성 특성 분석 결과 5,000회 이상의 bending cycle 에서도 초기 저항 값과 유사한 전기적 특성을 나타냄으로써 Ag grid가 적용된 ITO/Ag/ITO 플렉시블 투명 전극의 기계적 응력에 따른 전기적 안정성을 확인할 수 있었다. Ag grid가 적용된 ITO/Ag/ITO 투명 전극의 투명 안테나 적용 가능성을 타진하기 위해 low band 및 high band 영역에서의 안테나 효율을 측정하였으며, 모든 영역에서 상용화된 copper 안테나와 유사한 효율을 나타내었다. Ag grid를 이용한 플렉시블 투명 전극의 저저항/고투과율 특성은 플렉시블 광전소자의 투명 안테나로의 적용 가능성을 나타낸다.