Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.103-103
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- 2009
A study on properties and phase change characteristics of $Ga_x(Ge_2Sb_2Te_5)_{1-x}$ (x=0, 0.05, 0.1) thin films
$Ga_x(Ge_2Sb_2Te_5)_{1-x}$ (x=0, 0.05, 0.1) 박막의 물성 및 상변화 특성 평가
- Han, Gwang-Min (Center for Functional Nano Fine Chemicals, Chonnam National Univ) ;
- Song, Ki-Ho ;
- Beak, Seung-Cheol ;
- Lee, Hyun-Yong
- Published : 2009.06.18
Abstract
본 논문에서는 기존의 GST(GeSbTe=2:2:5)와 비교하여 상변화 재료로서의 Ga 도핑된